T1635T-8T
Datasheet
16 A 800 V Snubberless Triac in TO-220AB package
Features
A2
•
•
•
•
G
A1
Medium current Triac
High static and dynamic commutation
Three quadrants
ECOPACK2 compliant
Applications
A2
G
A2
A1
TO-220AB
•
•
•
•
•
•
General purpose AC line load switching
Motor control circuits
Small home appliances
Lighting
Inrush current limiting circuits
Overvoltage crowbar protection
Description
Available in through-hole package, the T1635T-8T Triac can be used for the on/off or
phase angle control function in general purpose AC switching where high
commutation capability is required.
This device can be used without a snubber circuit when the limits defined in this
datasheet are respected.
Product status link
T1635T-8T
Product summary
Order code
T1635T-8T
Package
TO-220AB
IT(RMS)
16 A
VDRM/VRRM
800 V
VDSM/VRSM
900 V
IGT
35 mA
DS9636 - Rev 4 - September 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
T1635T-8T
Characteristics
1
Characteristics
Table 1. Absolute maximum ratings (limiting values)
Symbol
Value
Unit
Tc = 129 °C
16
A
F = 50 Hz
t = 20 ms
120
F = 60 Hz
t = 16.7 ms
126
tp = 10 ms
95
Tj = 150 °C
600
Tj = 125 °C
800
Non repetitive surge peak off-state voltage
tp = 10 ms
900
V
dl/dt
Critical rate of rise of on-state current
IG = 2 x IGT, tr ≤ 100 ns
F = 100 Hz
100
A/µs
IGM
Peak gate current
Tj = 150 °C
4
A
Tj = 150 °C
1
W
Storage junction temperature range
-40 to +150
°C
Tj
Operating junction temperature range
-40 to +150
°C
TL
Maximum lead temperature soldering during 10 s
260
°C
IT(RMS)
ITSM
Parameter
On-state RMS current (full sine wave)
Non repetitive surge peak on-state current (Tj initial = 25 °C)
I2t value for fusing, (Tj initial = 25 °C)
I2t
VDRM/VRRM Repetitive surge peak off-state voltage
VDSM/VRSM
PG(AV)
Tstg
tp = 20 µs
Average gate power dissipation
A
A2s
V
Table 2. Electrical characteristics (Tj = 25 °C unless otherwise specified)
Symbol
Test conditions
Value
Min.
1.75
Max.
35
I - II - III
Max.
1.3
V
I - II - III
Min.
0.2
V
Max.
40
mA
IGT
VD = 12 V, RL = 30 Ω
I - II - III
VGT
VD = 12 V, RL = 30 Ω
VGD
VD = VDRM, RL = 3.3 kΩ , Tj = 150 °C
IH
(1)
IL
dV/dt(1)
(dI/dt)c(1)
IT = 500 mA
IG = 1.2 x IGT
I - III
II
VD = 536 V, gate open
Tj = 125 °C
VD = 402 V, gate open
Tj = 150 °C
Without snubber (dV/dt)c > 20 V/μs
Unit
Tj = 125 °C
Tj = 150 °C
Max.
Min.
Min.
60
65
2000
1000
16
8
mA
mA
V/µs
A/ms
1. For both polarities of A2 referenced to A1
DS9636 - Rev 4
page 2/11
T1635T-8T
Characteristics
Table 3. Static characteristics
Symbol
VT (1)
Test conditions
Value
Unit
ITM = 22.6 A, tp = 380 µs
Tj = 25 °C
Max.
1.55
VTO
Threshold voltage
Tj = 150 °C
Max.
0.85
Rd(1)
Dynamic resistance
Tj = 150 °C
Max.
27
mΩ
7.5
µA
(1)
IDRM, IRRM
Tj = 25 °C
VD = VR = 800 V
Tj = 125 °C
VD = VR = 600 V
Tj = 150 °C
V
Max.
Max.
1.0
mA
3.0
1. For both polarities of A2 referenced to A1
Table 4. Thermal parameters
Symbol
DS9636 - Rev 4
Parameter
Value
Unit
Rth(j-c)
Junction to case (AC)
1.1
°C/W
Rth(j-a)
Junction to ambient
60
°C/W
page 3/11
T1635T-8T
Characteristics (curves)
1.1
Characteristics curves
Figure 1. Maximum power dissipation versus on-state
RMS current (full cycle)
IT(RMS)(A)
P(W)
20
Figure 2. On-state RMS current versus case temperature
(full cycle)
18
18
16
16
14
14
12
12
10
10
8
8
6
6
4
180°
4
IT(RMS)( A)
2
2
0
0
2
4
6
8
10
12
14
16
Figure 3. On-state RMS current versus ambient
temperature (free air convection)
3.0
TC(°C)
0
0
25
50
75
100
125
150
Figure 4. Relative variation of thermal impedance versus
pulse duration
IT(RMS)(A)
1.0E+00
K = [Z th / Rth ]
2.5
Zth(j-c)
2.0
1.5
Zth(j-a)
1.0E-01
1.0
0.5
Ta(°C)
t p (s)
0.0
0
25
50
75
100
125
150
Figure 5. On-state characteristics (maximum values)
1000
ITM(A)
100
10
Tj=150 °C
Tj=25 °C
0.0
DS9636 - Rev 4
0.5
1.0
1 .5
VTM(V)
2.0
2.5
3.0
3 .5
Figure 6. Surge peak on-state current versus number of
cycles
ITSM(A)
Tjmax:
Vto = 0.85 V
Rd = 27 mΩ
1
1.0E-02
1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 1.0E+04
4.0
130
120
110
100
90
80
70
60
50
40
30
20
Repetitive
10
0 Tc = 129 °C
1
t = 20 ms
Non repetitive
Tj initial = 25 °C
One cycle
Number of cycles
10
100
1000
page 4/11
T1635T-8T
Characteristics (curves)
Figure 7. Non repetitive surge peak on-state current
10000
Figure 8. Relative variation of gate trigger current and
gate voltage versus junction temperature (typical values)
ITSM( A)
dl/dt limitation: 100
IGT, VGT [ Tj] / IG T, VG T [ Tj = 25 °C]
2.0
Tj initial = 25 °C
A / µs
IGT Q3
1.5
1000
IGT Q1 - Q2
ITSM
VGT
1.0
100
0.5
t p( ms )
sinusoidal pulse with width tp
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