T3035H-8G-TR

T3035H-8G Datasheet 30 A - 800 V - 150 °C 8H Triac in D²PAK Features A2 G A1 A2 • • • 30 A high current Triac 800 V symmetrical blocking voltage 150 °C maximum junction temperature Tj • • • • Three triggering quadrants High noise immunity - static dV/dt Robust dynamic turn-off commutation - (dl/dt)c ECOPACK2 compliant component Applications A1 A2 • • • • • • G D²PAK Home automation Smart AC plug Water heater, room heater and coffee machine AC Induction and Universal Motor control Inrush current limiter in AC DC rectifiers Lighting and automation I/O control General purpose AC line load control Description Product status link T3035H-8G Product summary IT(RMS) 30 A VDRM/VRRM 800 V VDSM/VRSM 900 V IGT 35 mA Specifically designed to operate at 800 V and 150 °C, the T3035H-8G Triac housed in D²PAK provides an enhanced thermal management: this 30 A triac is the right choice for a compact drive of heavy AC loads and enables the heatsink size reduction. Based on the ST Snubberless high temperature technology, it offers higher specified turn off commutation and noise immunity levels up to the Tj max. The T3035H-8G safely optimizes the control of the hardest universal motors, heaters and inductive loads for industrial control and home appliances. Available in D²PAK package, it is suitable for compact SMD designs on surface mount boards or insulated metal substrate or direct bond copper boards. DS12705 - Rev 5 - December 2020 For further information contact your local STMicroelectronics sales office. www.st.com T3035H-8G Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol IT(RMS) ITSM I2t Parameter 30 Non repetitive surge peak on-state current tp = 16.7 ms 283 (full cycle, Tj initial = 25 °C) tp = 20 ms 270 I2t value for fusing tp = 10 ms 482 A2s Tj = 25 °C 100 A/µs 800 V 900 V 4 A 5 W 1 W Storage temperature range -40 to +150 °C Operating junction temperature range -40 to +150 °C VDRM/VRRM Repetitive peak off-state voltage VDSM/VRSM Non Repetitive peak off-state voltage IGM Peak gate current PGM Maximum gate power dissipation Tstg Tj A Tc = 121 °C IG = 2 x IGT, tr ≤ 100 ns, f = 100 Hz PG(AV) Unit RMS on-state current (full sine wave) Critical rate of rise of on-state current, dl/dt Value tp = 10 ms, Tj = 25 °C tp = 20 µs, Tj = 150 °C Tj = 150 °C Average gate power dissipation A Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test conditions Quadrants Value Unit VD = 12 V, RL = 30 Ω I - II - III Min. 5 mA VD = 12 V, RL = 30 Ω I - II - III Max. 35 mA VGT VD = 12 V, RL = 30 Ω I - II - III Max. 1.3 V VGD VD = VDRM, RL = 3.3 kΩ I - II - III Min. 0.15 V I - III Max. 75 mA II Max. 90 mA Max. 60 mA IGT IL IG = 1.2 x IGT IH (1) IT = 500 mA, gate open dV/dt (1) (dl/dt)c Tj = 150 °C (1) VD = 536 V, gate open Tj = 150 °C Min. 2000 V/µs Without snubber network Tj = 150 °C Min. 25 A/ms 1. For both polarities of A2 referenced to A1. DS12705 - Rev 5 page 2/12 T3035H-8G Characteristics Table 3. Static characteristics Symbol VTM (1) VTO (1) (1) RD IDRM/IRRM Tj Test conditions Value Unit IT = 42 A, tp = 380 µs 25 °C Max. 1.55 V Threshold voltage 150 °C Max. 0.83 V Dynamic resistance 150 °C Max. 16 mΩ 2.5 µA 8.5 mA 3.6 mA Value Unit Max. 0.8 °C/W Typ. 45 °C/W 25 °C VD = VR = VDRM = VRRM 150°C VD = VR = 400 V, peak voltage 150 °C Max. Max. 1. For both polarities of A2 referenced to A1. Table 4. Thermal resistance Symbol Rth(j-c) Rth(j-a) Parameter Junction to case (AC) Junction to ambient (SCU (1) = 2 cm²) 1. Scu : copper pad surface under tab, 35 μm copper thickness on FR4 PCB. DS12705 - Rev 5 page 3/12 T3035H-8G Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Maximum power dissipation versus on-state RMS current IT(RMS)(A) P(W) 32 40 α = 180° 36 Figure 2. On-state RMS current versus case temperature α = 180° 28 32 24 28 20 24 16 20 12 16 12 8 8 4 180° 4 IT(RMS)(A) 0 0 2 4 6 8 10 12 14 16 Tc(°C) 0 18 20 22 24 26 28 0 30 25 75 50 100 125 150 Figure 3. On-state RMS current versus ambient temperature (free air convection) Figure 4. On-state characteristics (maximum values) IT(RMS)(A) 1000 ITM(A) Tj max. Vto = 0.83 V Rd = 16 mΩ 4.5 α = 180° 4.0 3.5 100 3.0 2.5 Tj = 150 °C 2.0 10 1.5 Tj = 25 °C 1.0 0.5 Ta(°C) 0.0 0 25 50 75 100 125 Figure 5. Relative variation of thermal impedance versus pulse duration 0 1 2 70 Zth(j-a) 4 5 Rth(c-a) (°C/W) (for heatsink sizing to avoid thermal runaway) 60 Zth(j-c) 3 Figure 6. Recommended maximum case-to-ambient thermal resistance versus ambient temperature for different peak off-state voltages K = [Zth/Rth] 1.0E+00 VTM(V) 1 150 VDRM=VRRM =200 V VDRM=VRRM =400 V 50 40 VDRM=VRRM = 600 V 1.0E-01 30 VDRM=VRRM = 800 V 20 tp(s) 1.0E-02 1.0E-03 1.0E-02 1.0E-01 1.0E+001.0E+011.0E+02 1.0E+031.0E+041.0E+05 DS12705 - Rev 5 10 Ta (°C) 0 20 40 60 80 100 120 140 page 4/12 T3035H-8G Characteristics (curves) Figure 7. Thermal resistance junction to ambient versus copper surface under tab Figure 8. Relative variation of leakage current versus junction temperature for different values of blocking voltage Rth(j-a) (°C/W) IDRM/IRRM [Tj, VDRM/VRRM] / IDRM/IRRM [Tj max.,800 V] 80 Epoxy printed circuit board FR4, eCu = 35 µm 1.0E+00 D²PAK 70 1.0E-01 60 VDRM = VRRM = 800 V 50 1.0E-02 40 VDRM = VRRM = 600 V 1.0E-03 30 20 1.0E-04 SCu (cm²) 10 0 0 5 10 15 20 25 30 35 40 Figure 9. Relative variation of gate trigger voltage and current versus junction temperature (typical values) Tj(°C) 1.0E-05 25 50 75 100 125 150 Figure 10. Relative variation of holding current and latching current versus junction temperature (typical values) IGT,VGT[Tj] / IGT,VGT[Tj = 25 °C] IH,IL [Tj] / IH,IL [Tj = 25 °C] 3.0 1.5 2.5 IGT Q3 2.0 1.0 IL IGT Q1-Q2 1.5 1.0 0.5 VGT Q1-Q2-Q3 IH 0.5 Tj (°C) 0.0 Tj (°C) 0.0 -50 -25 0 25 50 75 100 125 150 Figure 11. Surge peak on-state current versus number of cycles ITSM(A) -50 -25 25 50 75 100 125 150 Figure 12. Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms 10000 ITSM(A) 300 250 0 dl/dt limitation: 100 A/µs Tj initial = 25 °C t=20ms One cy cle Non repetitive Tj initial = 25 °C 200 1000 ITSM 150 100 100 50 Repetitive Tc = 121°C Number of cycles 0 1 DS12705 - Rev 5 10 100 1000 10 0.01 tp(ms) 0.10 1.00 10.00 page 5/12 T3035H-8G Characteristics (curves) Figure 13. Relative variation of static dV/dt immunity versus junction temperature Figure 14. Relative variation of critical rate of decrease of main current versus junction temperature (dl/dt)c [Tj] / (dl/dt)c [Tj = 150 °C] dV/dt [Tj] / dV/dt [Tj = 150 °C] 4 VD = VR = 536 V 3 2 1 Tj(°C) 0 25 DS12705 - Rev 5 50 75 100 125 150 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 Tj(°C) 25 50 75 100 125 150 page 6/12 T3035H-8G Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 2.1 D²PAK package information • • • ECOPACK2 compliant Lead-free package leads finishing Molding compound resin is halogen-free and meets UL94 flammability standard level V0 Figure 15. D²PAK package outline A E E1 E2 H D D1 L2 c2 2 3 D2 L3 1 b2 b e Max resin gate protrusion: 0.5 mm (1) G A1 A2 A3 L R Gauge Plane V2 c (1) Resin gate is accepted in each of position shown on the drawing, or their symmetrical. DS12705 - Rev 5 page 7/12 T3035H-8G D²PAK package information Table 5. D²PAK package mechanical data Dimensions Inches(1) Millimeters Ref. Min. Typ. Max. Min. Typ. Max. A 4.30 4.60 0.1693 0.1811 A1 2.49 2.69 0.0980 0.1059 A2 0.03 0.23 0.0012 0.0091 A3 0.25 0.0098 b 0.70 0.93 0.0276 0.0366 b2 1.25 1.7 0.0492 0.0669 c 0.45 0.60 0.0177 0.0236 c2 1.21 1.36 0.0476 0.0535 D 8.95 9.35 0.3524 0.3681 D1 7.50 8.00 0.2953 0.3150 D2 1.30 1.70 0.0512 0.0669 e 2.54 E 10.00 10.28 0.3937 0.4047 E1 8.30 8.70 0.3268 0.3425 E2 6.85 7.25 0.2697 0.2854 G 4.88 5.28 0.1921 0.2079 H 15 15.85 0.5906 0.6240 L 1.78 2.28 0.0701 0.0898 L2 1.19 1.40 0.0468 0.0551 L3 1.40 1.75 0.0551 0.0689 R V2(2) 0.10000 0.40 0° 0.0157 8° 0° 8° 1. Dimensions in inches are given for reference only 2. Degrees DS12705 - Rev 5 page 8/12 T3035H-8G D²PAK package information Figure 16. D²PAK recommended footprint (dimensions are in mm) 16.90 10.30 5.08 1.30 8.90 3.70 Figure 17. D²PAK stencil definitions (dimensions are in mm) DS12705 - Rev 5 page 9/12 T3035H-8G Ordering information 3 Ordering information Figure 18. Ordering information scheme T 30 35 H - 8 G - TR Series T = Triac RMS current 30 = 30 A Gate triggering current 35 = 35 mA High temperature H = High noise immunity and robust commutations Voltage 8 = 800 V Package G = D²PAK Packing TR = Tape and reel Blank = Tube Table 6. Ordering information Order code T3035H-8G-TR T3035H-8G DS12705 - Rev 5 Marking Package Weight T3035H-8G D²PAK 1.6 g Base qty. Delivery mode 1000 Tape and reel 13” 50 Tube page 10/12 T3035H-8G Revision history Table 7. Document revision history DS12705 - Rev 5 Date Version Changes 27-Jul-2018 1 Initial release. 25-Jun-2019 2 Minor text changed. 20-Dec-2019 3 Added Figure 7 and Figure 12. 15-Jan-2020 4 Updated Table 6. 21-Dec-2020 5 Updated general description. Inserted STPOWER logo. page 11/12 T3035H-8G IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2020 STMicroelectronics – All rights reserved DS12705 - Rev 5 page 12/12