T820T-6I

T8T Snubberless™, logic level and standard 8 A Triacs Datasheet - production data Features A2 • Medium current Triac • High static and dynamic commutation G • Low thermal resistance with clip bonding A1 • Packages is RoHS (2002/95/EC) compliant • 600 V VRM A1 A2 • UL certified (ref. file E81734) G Applications TO-220AB insulated (T8xxT-6I) • Value sensitive application • General purpose ac line load switching • Motor control circuits in power tools Table 1. Device summary Part number Symbol Value T810T-6I IGT 3Q logic level 10 mA T820T-6I T835T-6I IGT 3Q Snubberless 20 / 35 mA T825T-6I IGT 4Q standard 25 mA • Small home appliances, lighting • Inrush current limiting circuits • Overvoltage crowbar protection Description Available in through-hole, the T8T series of Triacs can be used as on/off or phase angle control function in general purpose ac switching where high commutation capability is required. This series can be designed in many value sensitive appliances thanks to the parameters guidance provided in the following pages. Provides insulation rated at 2500 V rms (TO-220AB insulated package). TM: Snubberless is a trademark of STMicroelectronics October 2013 This is information on a product in full production. DocID16192 Rev 4 1/8 www.st.com Characteristics 1 T8T Characteristics Table 2. Absolute ratings (limiting values; Tj = 25 °C, unless otherwise specified) Symbol IT(RMS) ITSM I ²t dI/dt VDSM, VRSM IGM PG(AV) Tstg Tj 2/8 Parameter Value Unit Tc = 97 °C 8 A F = 50 Hz tp = 20 ms 60 F = 60 Hz tp = 16.7 ms 63 tp = 10 ms 26 A ²s On-state rms current (full sine wave) Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) I²t Value for fusing A Critical rate of rise of on-state current IG = 2 x IGT tr ≤ 100 ns F = 60 Hz Tj = 125 °C 50 A/µs Non repetitive surge peak off-state voltage tp = 10 ms Tj = 25 °C VDRM, VRRM + 100 V Peak gate current tp = 20 µs Tj = 125 °C 4 A Tj = 125 °C 1 W Storage junction temperature range - 40 to + 150 °C Operating junction temperature range - 40 to + 125 °C Average gate power dissipation DocID16192 Rev 4 T8T Characteristics Table 3. Electrical characteristics (Tj = 25 °C, unless otherwise specified) T8xxT Symbol IGT (1) VGT Test conditions Quadrant IT = 500 mA T835T 10 20 25 35 40 ALL MAX. 1.3 V ALL MIN. 0.2 V MAX. I - III IV IG = 1.2 IGT IL Tj = 125 °C VD = 67% VDRM, gate open Tj = 150 °C(3) 25 30 40 20 35 40 50 40 mA mA 25 40 70 70 100 750 500 2000 50 500 300 1000 MIN. (dV/dt)c = 0.1 V/µs V/µs 5.4 Tj = 125 °C (dV/dt)c = 10 V/µs (dI/dt)c (2) 15 MAX. II dV/dt (2) mA IV Tj = 25 °C IH (2) T825T MAX. VD = VDRM, RL = 30 Ω, VD = VDRM, RL = 3.3 kΩ, Tj = 125 °C T820T I - II - III VD = 12 V, RL = 30 Ω VGD Unit T810T 2 Without snubber 4.5 3.4 8 MIN. (dV/dt)c = 0.1 V/µs A/ms 2.5 Tj = 150 °C (3) (dV/dt)c = 10 V/µs 1 Without snubber 2 2 6.5 1. Minimum IGT is guaranteed at 5% of IGT max. 2. For both polarities of A2 referenced to A1. 3. Derating information for excess temperature above Tj max. Table 4. Static characteristics Symbol VT (1) Test conditions Value Unit ITM = 11.3 A, tp = 380 µs Tj = 25 °C MAX. 1.60 V Threshold voltage Tj = 125 °C MAX. 0.87 V RD (1) Dynamic resistance Tj = 125 °C MAX. 60 mΩ 5 µA IDRM, IRRM VDRM = VRRM VTO (1) Tj = 25 °C MAX. Tj = 125 °C Tj = 150 °C(2) VD = 0.9 x VDRM 1 mA TYP. 1.9 1. For both polarities of A2 referenced to A1. 2. Derating information for excess temperature above Tj max. DocID16192 Rev 4 3/8 8 Characteristics T8T Table 5. Thermal resistance Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) 2.8 °C/W Rth(j-a) Junction to ambient (DC) 60 °C/W Figure 1. Maximum power dissipation versus rms on-state current Figure 2. On-state rms current versus case temperature P(W) 10 IT(RMS)(A) 10 9 α = 180° 9 α = 180° 8 8 7 7 6 6 5 5 4 4 3 3 2 2 180° 1 1 IT(RMS)(A) 0 0 1 2 3 TC(°C) 0 4 5 6 7 0 8 Figure 3. On-state rms current versus ambient temperature (free air convection) 2.5 IT(RMS)(A) 25 50 75 100 125 Figure 4. Relative variation of thermal impedance versus pulse duration 1.0E+00 K = [Zth / Rth] Zth(j-c) α = 180° 2.0 Zth(j-a) TO-220AB 1.5 1.0E-01 1.0 TO-220AB 0.5 Ta(°C) 0.0 0 25 50 75 100 125 Figure 5. On-state characteristics (maximum values) 100 ITM(A) 1.0E-02 1.0E-03 Tp(s) 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Figure 6. Surge peak on state current versus number of cycles 70 ITSM(A) 60 t = 20 ms Non repetitive Tj initial = 25 °C 50 One cycle 40 10 30 Repetitive Tc = 97 °C 20 VTM(V) 1 0 4/8 Tjmax: Vto = 0.87 V Rd =6 0 mΩ 1 2 10 Number of cycles 0 3 4 5 1 DocID16192 Rev 4 10 100 1000 T8T Characteristics Figure 7. Non repetitive surge peak on-state current for a sinusoidal 1000 ITSM(A), I²t (A²s) Figure 8. Relative variation of gate trigger current and gate trigger voltage versus junction temperature 3.0 IGT, VGT[Tj] / IGT, VGT[Tj = 25 °C] typical values Tj initial = 25 °C 2.5 ITSM dl /dt limitation: 50 A / µs IGT Q3 IGT Q1-Q2 2.0 1.5 100 1.0 IGT Q1-Q2-Q3 I²t 0.5 tp(ms) pulse with width tp