TDE1898CDP

TDE1897C TDE1898C ® 0.5A HIGH-SIDE DRIVER INDUSTRIAL INTELLIGENT POWER SWITCH 0.5A OUTPUT CURRENT 18V TO 35V SUPPLY VOLTAGE RANGE INTERNAL CURRENT LIMITING THERMAL SHUTDOWN OPEN GROUND PROTECTION INTERNAL NEGATIVE VOLTAGE CLAMPING TO VS - 45V FOR FAST DEMAGNETIZATION DIFFERENTIAL INPUTS WITH LARGE COMMON MODE RANGE AND THRESHOLD HYSTERESIS UNDERVOLTAGE LOCKOUT WITH HYSTERESIS OPEN LOAD DETECTION TWO DIAGNOSTIC OUTPUTS OUTPUT STATUS LED DRIVER DESCRIPTION The TDE1897C/TDE1898C is a monolithic Intelligent Power Switch in Multipower BCD Technol- MULTIPOWER BCD TECHNOLOGY Minidip SIP9 SO20 ORDERING NUMBERS: TDE1897CDP TDE1898CDP TDE1898CSP TDE1897CFP TDE1898CFP ogy, for driving inductive or resistive loads. An internal Clamping Diode enables the fast demagnetization of inductive loads. Diagnostic for CPU feedback and extensive use of electrical protections make this device inherently indistructible and suitable for general purpose industrial applications. BLOCK DIAGRAM September 2003 1/12 TDE1897C - TDE1898C PIN CONNECTIONS (Top view) SO20 Minidip SIP9 ABSOLUTE MAXIMUM RATINGS (Minidip pin reference) Symbol VS VS – VO Parameter Supply Voltage (Pins 3 - 1) (TW < 10ms) Supply to Output Differential Voltage. See also VCl 3-2 (Pins 3 - 2) Vi Vi Input Voltage (Pins 7/8) Differential Input Voltage (Pins 7 - 8) Ii IO Input Current (Pins 7/8) Output Current (Pins 2 - 1). See also ISC El Energy from Inductive Load (TJ = 85°C) Ptot Top Power Dissipation. See also THERMAL CHARACTERISTICS. Operating Temperature Range (Tamb) Tstg Storage Temperature Value Unit 50 internally limited V V -10 to VS +10 43 V V 20 internally limited mA A 200 mJ internally limited -25 to +85 W °C -55 to 150 °C THERMAL DATA Symbol Rth j-case Rth j-amb 2/12 Description Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Minidip Sip 100 10 70 SO20 Unit 90 °C/W °C/W TDE1897C - TDE1898C ELECTRICAL CHARACTERISTICS (VS = 24V; Tamb = –25 to +85°C, unless otherwise specified) Symbol Vsmin 3 Parameter Test Condition Supply Voltage for Valid Diagnostics Min. Idiag > 0.5mA @ Vdg1 = 1.5V Typ. 9 Vs 3 Supply Voltage (operative) Iq 3 Quiescent Current Iout = Ios = 0 Vil Vih Vsth1 Undervoltage Threshold 1 (See fig. 1); Tamb = 0 to +85°C Vsth2 3 Vshys Undervoltage Threshold 2 Supply Voltage Hysteresis (See fig. 1); Tamb = 0 to +85°C (See fig. 1); Tamb = 0 to +85°C 0.4 Short Circuit Current VS = 18 to 35V; RL = 1Ω 0.75 Output Voltage Drop @ Iout = 625mA; Tj = 25°C @ Iout = 625mA; Tj = 125°C Ioslk 2 Vol 2 Output Leakage Current @ Vi = Vil , Vo = 0V Low State Out Voltage @ Vi = Vil; RL = ∞ Vcl 3-2 Iold 2 Internal Voltage Clamp (VS - VO) Open Load Detection Current @ IO = -500mA Vi = Vih; Tamb = 0 to +85°C Vid 7-8 Common Mode Input Voltage Range (Operative) VS = 18 to 35V, VS = Vid 7-8 < 37V Iib 7-8 Vith 7-8 Input Bias Current Input Threshold Voltage Vi = –7 to 15V; –In = 0V V+In > V–In Viths 7-8 Input Threshold Hysteresis Voltage V+In > V–In Rid 7-8 Diff. Input Resistance @ 0 < +In < +16V; –In = 0V @ –7 < +In < 0V; –In = 0V Iilk 7-8 Input Offset Current V+In = V–In 0V < Vi V–In); All test not dissipative. 2 0.7 Minidip pin reference. 3/12 TDE1897C - TDE1898C SOURCE DRAIN NDMOS DIODE Symbol Vfsd 2-3 Parameter Forward On Voltage Test Condition @ Ifsd = 625mA Ifp 2-3 trr 2-3 Forward Peak Current t = 10ms; d = 20% Reverse Recovery Time If = 625mA di/dt = 25A/µs tfr 2-3 Forward Recovery Time Min. Typ. 1 Max. 1.5 Unit V 2 A 200 ns 50 ns 150 30 °C °C THERMAL CHARACTERISTICS (*) Θ Lim TH Junction Temp. Protect. Thermal Hysteresis 135 SWITCHING CHARACTERISTICS (VS = 24V; RL = 48Ω) (*) ton Turn on Delay Time 100 µs toff Turn off Delay Time 20 µs td Input Switching to Diagnostic Valid 100 µs Note Vil < 0.8V, Vih > 2V @ (V+In > V–In); Minidip pin reference. (*) Not tested. Figure 1 DIAGNOSTIC TRUTH TABLE Diagnostic Conditions Normal Operation Open Load Condition (Io < Iold) Short to VS Short Circuit to Ground (IO = ISC) (**) TDE1897C TDE1898C Output DMOS Open Overtemperature Supply Undervoltage (VS < Vsth1 in the falling phase of the supply voltage; VS < Vsth2 in the rising phase of the supply voltage) Input L H L H Output L H L H Diag1 H H H L Diag2 H H H H L H H H L L H H H