TODV1240

T ODV 640 ---> 1240 ALTERNISTORS . . . FEATURES HIGH COMMUTATION : > 142 A/ms (400Hz) INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : EB1734) HIGH VOLTAGE CAPABILITY : VDRM = 1200 V A2 G A1 DESCRIPTION The TODV 640 ---> 1240 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) Parameter Tc = 75 °C Value 40 Unit A RD91 (Plastic) ITSM tp = 2.5 ms tp = 8.3 ms tp = 10 ms 590 370 350 610 20 100 - 40 to + 150 - 40 to + 125 260 A I2t dI/dt I2t value Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs tp = 10 ms Repetitive F = 50 Hz Non Repetitive A2s A/µs Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case °C °C °C Symbol Parameter 640 840 800 TODV 1040 1000 1240 1200 Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 600 V March 1995 1/5 TODV 640 ---> 1240 THERMAL RESISTANCES Symbol Rth (c-h) Parameter Contact (case-heatsink) with grease Value 0.1 1.2 0.9 Unit °C/W °C/W °C/W Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360 ° conduction angle ( F= 50 Hz) GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 40W (tp = 20 µs) IGM = 8A (tp = 20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt VD=12V VD=12V Test Conditions (DC) RL=33Ω (DC) RL=33Ω Tj=25°C Tj=25°C Tj=125°C Tj=25°C Tj=25°C Quadrant I-II-III I-II-III I-II-III I-II-III MAX MAX MIN TYP Value 200 1.5 0.2 2.5 Unit mA V V µs mA VD=VDRM RL=3.3kΩ VD=VDRM IG = 500mA dIG/dt = 3A/µs IG=1.2 IGT IL I-III II TYP 100 200 IH * VTM * IDRM IRRM dV/dt * IT= 500mA gate open ITM = 60A tp= 380µs VDRM VRRM Rated Rated Tj=25°C Tj=25°C Tj=25°C Tj=125°C Tj=125°C TYP MAX MAX MAX MIN 50 1.8 0.02 8 500 mA V mA Linear slope up to VD=67%VDRM gate open (dV/dt)c = 200V/µs (dV/dt)c = 10V/µs V/µs (dI/dt)c * Tj=125°C MIN 35 142 A/ms * For either polarity of electrode A2 voltage with reference to electrode A1. 2/5 TODV 640 ---> 1240 F ig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. Fig.3 : RMS on-state current versus case temperature. Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1 0.1 tp (s) 0.01 1E-3 1E-2 1E-1 1E +0 1 E+1 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Fig.6 : Non Repetitive surge peak on-state current versus number of cycles. 3/5 TODV 640 ---> 1240 F ig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2t. Fig.8 : On-state characteristics (maximum values). Fig.9 : Safe operating area. 4/5 TODV 640 ---> 1240 PACKAGE MECHANICAL DATA RD91 Plastic L2 a2 LI REF. Min. DIMENSIONS Millimeters Max. 40.00 29.90 30.30 22.00 27.00 13.50 16.50 24.00 14.00 3.50 1.95 0.70 4.00 11.20 3.10 1.70 33° 28° 3.00 0.90 4.50 13.60 3.50 1.90 43° 38° 0.077 0.027 0.157 0.441 0.122 0.067 33° 28° 0.531 1.177 Inches Min. Max. 1.575 1.193 0.867 1.063 0.650 0.945 0.551 0.138 0.118 0.035 0.177 0.535 0.138 0.075 43° 38° b2 C c2 a1 N2 N1 F E I A Marking : type number Weight : 20 g A d1 c1 a1 a2 B b1 b2 C c1 c2 E B F I L1 L2 N1 N2 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5