TPDV1025

T PDV 625 ---> 1225 ALTERNISTORS . . . FEATURES HIGH COMMUTATION : > 88 A/ms (400Hz) INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : EB81734) HIGH VOLTAGE CAPABILITY : VDRM = 1200 V DESCRIPTION The TPDV 625 ---> 1225 use a high performance passivated glass alternistor technology. Featuring very high commutation levels and high surge current capability, this family is well adapted to power control on inductive load (motor, transformer...) ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current ( Tj initial = 25°C ) Parameter A1 A2 G TOP 3 (Plastic) Value Tc = 85 °C 25 Unit A ITSM tp = 2.5 ms tp = 8.3 ms tp = 10 ms 390 250 230 265 20 100 - 40 to + 150 - 40 to + 125 260 A I2t dI/dt I2t value Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/µs tp = 10 ms Repetitive F = 50 Hz Non Repetitive A2s A/µs Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case °C °C °C Symbol Parameter 625 825 800 TPDV 1025 1000 1225 1200 Unit VDRM VRRM March 1995 Repetitive peak off-state voltage Tj = 125 °C 600 V 1/5 TPDV 625 ---> 1225 THERMAL RESISTANCES Symbol Rth (j-a) Contact to ambient Parameter Value 50 1.5 1.1 Unit °C/W °C/W °C/W Rth (j-c) DC Junction to case for DC Rth (j-c) AC Junction to case for 360 ° conduction angle ( F= 50 Hz) GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 40W (tp = 20 µs) IGM = 8A (tp = 20 µs) VGM = 16V (tp = 20 µs). ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt VD=12V VD=12V Test Conditions (DC) RL=33Ω (DC) RL=33Ω Tj=25°C Tj=25°C Tj=125°C Tj=25°C Tj=25°C Quadrant I-II-III I-II-III I-II-III I-II-III MAX MAX MIN TYP Value 150 1.5 0.2 2.5 Unit mA V V µs mA VD=VDRM RL=3.3kΩ VD=VDRM IG = 500mA dIG/dt = 3A/µs IG=1.2 IGT IL I-III II TYP 100 200 IH * VTM * IDRM IRRM dV/dt * IT= 500mA gate open ITM = 35A tp= 380µs VDRM VRRM Rated Rated Tj=25°C Tj=25°C Tj=25°C Tj=125°C Tj=125°C TYP MAX MAX MAX MIN 50 1.8 0.02 8 500 mA V mA Linear slope up to VD=67%VDRM gate open (dV/dt)c = 200V/µs (dV/dt)c = 10V/µs V/µs (dI/dt)c * Tj=125°C MIN 20 88 A/ms * For either polarity of electrode A2 voltage with reference to electrode A1. 2/5 TPDV 625 ---> 1225 F ig.1 : Maximum RMS power dissipation versus RMS on-state current (F=50Hz). (Curves are cut off by (dI/dt)c limitation) Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact. Fig.3 : RMS on-state current versus case temperature. Fig.4 : Relative variation of thermal impedance versus pulse duration. Zth/Rth 1.00 Zth( j-c) 0.10 Zt h( j-a) 0.01 tp (s) 1E-3 1E-2 1E-1 1E +0 1 E+1 1 E+2 1 E+3 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Fig.6 : Non Repetitive surge peak on-state current versus number of cycles. 3/5 TPDV 625 ---> 1225 F ig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2t. Fig.8 : On-state characteristics (maximum values). Fig.9 : Safe operating area. 4/5 TPDV 625 ---> 1225 PACKAGE MECHANICAL DATA TOP 3 Plastic REF. A R 4.6 I J H DIMENSIONS Millimeters Min. Max. 15.50 21.10 15.60 16.50 4.60 4.17 1.55 0.70 2.90 5.65 1.40 Inches Min. 0.594 0.814 0.561 0.632 0.133 0.173 0.161 0.057 0.019 0.106 0.212 0.047 Max. 0.611 0.831 0.615 0.650 0.182 0.164 0.062 0.028 0.115 0.223 0.056 A B G B D 15.10 20.70 14.30 16.10 3.40 4.40 4.08 1.45 0.50 2.70 5.40 1.20 C D G H I J P L M C L M N P N N Cooling method : C Marking : type number Weight : 4.7 g Recommended torque value : 0.8 m.N. Maximum torqur value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 5/5