TS271M

TS271C,I,M PROGRAMMABLE CMOS SINGLE OPERATIONAL AMPLIFIERS . . . . . . . OFFSET NULL CAPABILITY (by external compensation) DYNAMIC CHARACTERISTICS ADJUSTABLE BY ISET CONSUMPTION CURRENT AND DYNAMIC PARAMETERS ARE STABLE REGARDING THE VOLTAGE POWER SUPPLY VARIATIONS OUTPUT VOLTAGE CAN SWING TO GROUND VERY LARGE ISET RANGE STABLE AND LOW OFFSET VOLTAGE THREE INPUT OFFSET VOLTAGE SELECTIONS N DIP8 (Plastic Package) D SO8 (Plastic Micropackage) DESCRIPTION The TS271 is a low cost, low power single operational amplifier designed to operate with single or ORDER CODES Part Number TS271C/AC/BC TS271I/AI/BI TS271M/AM/BM Example : TS271ACN Temperature Range 0oC, +70oC -40oC, +125oC -55 C, +125 C o o Package N q q q D q q q dual supplies. This operational amplifier uses the SGS-THOMSON silicon gate CMOS process giving it an excellent consumption-speed ratio. This amplifier is ideally suited for low consumption applications. The power supply is externally programmable with a resistor connectedbetween pins 8 and 4. It allows to choose the best consumption-speed ratio and supply current can be minimized according to the required speed. This device is specified for the following ISET current values : 1.5µA, 25µA, 130µA. This CMOS amplifier offers very high input impedance and extremely low input currents. The major advantage versus JFET devices is the very low input currents drift with temperature (see figure 3). PIN CONNECTIONS (top view) 1 2 3 4 + 8 7 6 5 1 - Offset Null 1 2 - Inverting Input 3 - Non-inverting Input 4 - V CC 5 - Offset Null 2 6 - Output 7 -V + CC 8 -I SET October 1997 1/15 TS271C,I,M BLOCK DIAGRAM VCC Output stage Input differential Second stage Output VCC Offset null E Iset Input E Input MAXIMUM RATINGS Symbol VCC+ Vid Vi IO Iin Toper Supply Voltage - (note 1) Differential Input Voltage - (note 2) Input Voltage - (note 3) Output Current for VCC+ ≥ 15V Input Current Operating Free-Air Temperature Range TS271C/AC/BC TS271I/AI/BI TS271M/AM/BM Tstg Storage Temperature Range 0 to +70 -40 to +125 -55 to +125 -65 to +150 o Parameter Value 18 ±18 -0.3 to 18 ±30 ±5 Unit V V V mA mA o C C Notes : 1. All voltage values, except differential voltage, are with respect to network ground terminal. 2. Differential voltages are the non-inverting input terminal with respect to the inverting input terminal. 3. The magnitude of the input and the output voltages must never exceed the magnitude of the positive supply voltage. OPERATING CONDITIONS Symbol VCC + Parameter Supply Voltage Common Mode Input Voltage Range Value 3 to 16 0 to VCC - 1.5 + Unit V V Vicm 2/15 V CC SCHEMATIC DIAGRAM T27 T10 T5 T6 T26 T28 T8 T1 R1 T11 T12 T2 Input + T15 Input C1 T7 Set Current C2 Output T3 T4 T16 T13 T9 T14 T29 Offset Null 1 Offset Null 2 V CC TS271C,I,M 3/15 TS271C,I,M OFFSET VOLTAGE NULL CIRCUIT RESISTOR BIASING VCC VCC 5 1 8 25kΩ VCC R set VO VO R set R set VCC VCC OFFSET COMPENSATION GUARANTEED FOR TS271BCX (ISET > 25µA),TS271ACX (ISET> 90µA) R SET CONNECTED TO GROUND RSET CONNECTED TO VCC- (R SET VALUE : SEE Fig.1) Figure 1 : RSET Connected to VCC-. V V R set CC CC = +3V = +5V V V CC CC = +10V = +16V 10M Ω 1M Ω 100k Ω Ω 0. 1µA 10k 1 µA 1 0µ A 1 0 0µA I set 4/15 TS271C,I,M ELECTRICAL CHARACTERISTICS FOR ISET = 1.5µA VCC+ = +10V, VCC- = 0V, Tamb = 25oC (unless otherwise specified) Symbol Vio Parameter Input Offset Voltage VO = 1.4V, V ic = 0V TS271C/I/M TS271AC/AI/AM TS271BC/BI/BM Tmin. ≤ Tamb ≤ Tmax. TS271C/I/M TS271AC/AI/AM TS271BC/BI/BM DVio Iio Input Offset Voltage Drift Input Offset Current - (note 1) Vic = 5V, Vo = 5V Tmin. ≤ Tamb ≤ Tmax. Input Bias Current - (note 1) Vic = 5V, Vo = 5V Tmin. ≤ Tamb ≤ Tmax. High Level Output Voltage Vid = 100mV, R L = 1M Ω Tmin. ≤ Tamb ≤ Tmax. Low Level Output Voltage (Vid = -100mV) Large Signal Voltage Gain Vo = 1V to 6V, R L = 1MΩ, Vic = 5V Tmin. ≤ Tamb ≤ Tmax. Gain Bandwidth Product (Av = 40dB, RL = 1MΩ, CL = 100pF, fin = 10kHz) Common Mode Rejection Ratio Vo = 1.4V, Vic = 1V to 7.4V Supply Voltage Rejection Ratio + VCC = 5V to 10V ,Vo = 1.4V Supply Current Av = 1, no load, Vo = 5V Tmin. ≤ Tamb ≤ Tmax. Output Short Circuit Current Vid = 100mV, Vo = 0V Output Sink Current Vid = -100mV, Vo = VCC Slew-Rate at Unity Gain R L = 1MΩ, CL= 100pF, Vi = 3 to 7V Phase Margin at Unity Gain Av = 40dB, RL = 1MΩ C L= 10pF C L= 100pF Overshoot Factor C L = 10pF C L = 100pF en Equivalent Input Noise Voltage f = 1kHz, RS = 100Ω 40 70 68 40 70 68 nV  Hz √ 60 60 30 20 100 8.8 8.7 0.7 1 100 1 150 9 50 30 20 100 MHz 0.1 80 80 10 15 17 60 60 0.1 dB 80 dB 80 10 15 18 µA 8.8 8.6 9 50 mV V/mV 1 300 V TS271C/AC/BC Min. Typ. 1.1 0.9 0.25 Max. 10 5 2 12 6.5 3 0.7 1 200 pA TS271I/AI/BI TS271M/AM/BM Min. Typ. 1.1 0.9 0.25 Max. mV 10 5 2 12 6.5 3.5 µV/oC pA Unit Iib VOH VOL Avd GBP CMR SVR ICC Io Isink SR ∅m mA 60 45 0.04 60 mA 45 V/µs 0.04 Degrees 35 10 35 10 % Kov Note : 1. Maximum values including unavoidable inaccuracies of the industrial test. 5/15 TS271C,I,M TYPICAL CHARACTERISTICS FOR ISET = 1.5µA Figure 2 : SUPPLY CURRENT, ICC (µA) Supply Current versus Supply Voltage Tamb = 25°C AV = 1 VO = V CC / 2 Figure 3 : INPUT BIASCURRENT, I IB (pA) 100 Input Bias Current versus Free Air Temperature VCC = 10V Vic = 5V 20 15 10 10 5 1 25 50 75 100 TEMPERATURE, T amb (°C) 125 0 4 8 12 16 SUPPLY VOLTAGE, VCC (V) Figure 4a : High Level Output Voltage versus High Level Output Current OUTPUT VOLTAGE, V OH (V) 5 4 3 2 VCC = 3V 1 0 T amb = 25°C V id = 100mV VCC = 5V Figure 4b : High Level Output Voltage versus High Level Output Current OUTPUT VOLTAGE, V OH (V) 20 16 12 8 4 0 -50 VCC = 10V T amb = 25°C V id = 100mV VCC = 16V -10 -8 -6 -4 -2 OUTPUT CURRENT, I OH (mA) 0 -40 -30 -20 -10 OUTPUT CURRENT, I OH (mA) 0 Figure 5a : Low Level Output Voltage versus Low Level Output Current 1.0 OUTPUT VOLTAGE,V OL (V) V CC = 3V 0.8 V CC = 5V 0.6 0.4 0.2 Figure 5b : Low Level Output Voltage versus Low Level Output Current OUTPUT VOLTAGE,V OL (V) 3 V CC = 10V VCC = 16V 2 T amb = 25°C V ic = 0.5V V id = -100mV 1 2 OUTPUT CURRENT, I OL (mA) 3 1 T amb = 25°C Vic = 0.5V Vid = -100mV 4 8 12 16 OUTPUT CURRENT, I OL (mA) 20 0 0 6/15 TS271C,I,M TYPICAL CHARACTERISTICS FOR ISET = 1.5µA (continued) Figure 6 : Open Loop Frequency Response and Phase Shift Figure 7 : GAIN BANDW.PROD., GBP (kHz) Gain Bandwidth Product versus Supply voltage Tamb = 25°C R L = 1MΩ C L = 100pF AV = 1 50 40 GAIN (dB) 30 20 10 0 PHASE Tamb = 25°C VCC+ = 10V R L = 1MΩ C L = 100pF A VCL = 100 3 Phase Margin Gain Bandwidth Product 4 5 120 100 80 60 40 0 45 90 135 180 10 6 -10 2 10 10 10 10 FREQUENCY, f (Hz) PHASE(Degrees) GAIN 0 4 8 12 SUPPLY VOLTAGE, V CC (V) 16 Figure 8 : 10 8 6 4 2 Phase Margin versus Supply Voltage Figure 9 : PHASE MARGIN, φ m (Degrees) Phase Margin versus Capacitive Load Tamb = 25°C R L= 1M Ω AV = 1 VCC = 10V PHASE MARGIN, φ m (Degrees) 40 30 Tamb = 25°C R L = 1MΩ C L = 100pF AV = 1 4 8 12 SUPPLY VOLTAGE, VCC (V) 16 20 10 0 0 20 40 60 80 CAPACITANCE, C L (pF) 100 Figure 10 : Slew Rates versus Supply Voltage 0.07 SLEW RATES,SR (V/ µs) 0.06 0.05 0.04 0.03 0.02 0.01 4 6 8 10 12 14 SUPPLY VOLTAGE, VCC (V) 16 T amb = 25°C R L = 1MΩ C L = 100pF SR SR 7/15 TS271C,I,M ELECTRICAL CHARACTERISTICS FOR ISET = 25µA VCC+ = +10V, VCC- = 0V, Tamb = 25oC (unless otherwise specified) Symbol Vio Parameter Input Offset Voltage VO = 1.4V, V ic = 0V TS271C/I/M TS271AC/AI/AM TS271BC/BI/BM Tmin. ≤ Tamb ≤ Tmax. TS271C/I/M TS271AC/AI/AM TS271BC/BI/BM DVio Iio Input Offset Voltage Drift Input Offset Current - (note 1) Vic = 5V, Vo = 5V Tmin. ≤ Tamb ≤ Tmax. Input Bias Current - (note 1) Vic = 5V, Vo = 5V Tmin. ≤ Tamb ≤ Tmax. High Level Output Voltage Vid = 100mV, R L = 100kΩ Tmin. ≤ Tamb ≤ Tmax. Low Level Output Voltage (Vid = -100mV) Large Signal Voltage Gain Vo = 1V to 6V, R L = 100kΩ, Vic = 5V Tmin. ≤ Tamb ≤ Tmax. Gain Bandwidth Product (Av = 40dB, RL = 100kΩ, CL = 100pF, fin = 100kHz) Common Mode Rejection Ratio Vo = 1.4V, Vic = 1V to 7.4V Supply Voltage Rejection Ratio + VCC = 5V to 10V ,Vo = 1.4V Supply Current Av = 1, no load, Vo = 5V Tmin. ≤ Tamb ≤ Tmax. Output Short Circuit Current Vid = 100mV, Vo = 0V Output Sink Current Vid = -100mV, Vo = VCC Slew-Rate at Unity Gain R L = 100kΩ, CL= 100pF, Vi = 3 to 7V Phase Margin at Unity Gain Av = 40dB, RL = 100kΩ C L = 10pF C L= 100pF Overshoot Factor C L = 10pF C L = 100pF en Equivalent Input Noise Voltage f = 1kHz, RS = 100Ω 30 50 38 30 50 38 nV  Hz √ 60 60 30 20 50 8.7 8.6 2 1 100 1 150 8.9 50 30 10 50 MHz 0.7 80 80 150 200 250 60 60 0.7 dB 80 dB 80 150 200 300 µA 8.7 8.5 8.9 50 mV V/mV 1 300 V TS271C/AC/BC Min. Typ. 1.1 0.9 0.25 Max. 10 5 2 12 6.5 3 2 1 200 pA TS271I/AI/BI TS271M/AM/BM Min. Typ. 1.1 0.9 0.25 Max. mV 10 5 2 12 6.5 3.5 µV/oC pA Unit Iib VOH VOL Avd GBP CMR SVR ICC Io Isink SR ∅m mA 60 45 0.6 0.6 60 mA 45 V/µs degrees 50 30 50 30 % Kov Note : 1. Maximum values including unavoidable inaccuracies of the industrial test. 8/15 TS271C,I,M TYPICAL CHARACTERISTICS FOR ISET = 25µA Figure 11 : Supply Current versus Supply Voltage SUPPLYCURRENT, I CC ( µA) 200 Figure 12 : Input Bias Current versus Free Air Temperature INPUT BIASCURRENT, I IB (pA) 100 VCC = 10V Vic = 5V 150 100 Tamb = 25°C AV = 1 VO = VCC / 2 4 8 12 16 10 50 0 1 25 50 75 100 TEMPERATURE, T amb (°C) 125 SUPPLY VOLTAGE, VCC (V) Figure 13a : High Level Output Voltage versus High Level Output Current OUTPUT VOLTAGE, V OH (V) 5 4 3 2 VCC = 3V 1 0 T amb = 25°C V id = 100mV VCC = 5V Figure 13b : High Level Output Voltage versus High Level Output Current OUTPUT VOLTAGE, V OH (V) 20 16 12 8 4 0 -50 VCC = 10V T amb = 25°C V id = 100mV VCC = 16V -10 -8 -6 -4 -2 OUTPUT CURRENT, I OH (mA) 0 -40 -30 -20 -10 OUTPUT CURRENT, I OH (mA) 0 Figure 14a : Low Level Output Voltage versus Low Level Output Current 1.0 OUTPUT VOLTAGE,V OL (V) V CC = 3V 0.8 0.6 0.4 0.2 V CC = 5V Figure 14b : Low Level Output Voltage versus Low Level Output Current OUTPUT VOLTAGE,V OL (V) 3 V CC = 10V VCC = 16V 2 T amb = 25°C V ic = 0.5V V id = -100mV 1 2 OUTPUT CURRENT, I OL (mA) 3 1 T amb = 25°C Vic = 0.5V Vid = -100mV 4 8 12 16 OUTPUT CURRENT, I OL (mA) 20 0 0 9/15 TS271C,I,M TYPICAL CHARACTERISTICS FOR ISET = 25µA (continued) Figure 15 : Open Loop Frequency Response and Phase Shift 50 40 GAIN (dB) 30 20 10 0 -10 2 10 PHASE Tamb = 25°C VCC+ = 10V R L = 100k Ω C L = 100pF A VCL = 100 10 3 4 Phase Margin Figure 16 : Gain Bandwidth Product versus Supply voltage GAIN BANDW. PROD., GBP (kHz) 0.8 0.8 0.7 0.6 0.5 0.4 0 4 8 12 16 SUPPLY VOLTAGE, V CC (V) Tamb = 25 °C R L = 100kΩ C L = 100pF AV = 1 GAIN 0 45 90 135 PHASE(Degrees) Gain Bandwidth Product 180 7 5 6 10 10 10 FREQUENCY, f (Hz) 10 Figure 17 : Phase Margin versus Supply Voltage 50 40 30 20 10 Tamb = 25°C R L = 100k Ω C L = 100pF AV = 1 4 8 12 SUPPLY VOLTAGE, VCC (V) 16 Figure 18 : Phase Margin versus Capacitive Load PHASE MARGIN, φ m (Degrees) 50 40 Tamb = 25°C R L = 100k Ω AV = 1 VCC = 10V PHASE MARGIN, φ m (Degrees) 30 20 0 0 20 40 60 80 CAPACITANCE, C L (pF) 100 Figure 19 : Slew Rates versus Supply Voltage 1.0 SLEW RATES, SR (V/µ s) SR 0.8 SR 0.6 0.4 0.2 0 T amb = 25°C R L = 100kΩ C L = 100pF 4 6 8 10 12 14 SUPPLY VOLTAGE, V CC (V) 16 10/15 TS271C,I,M ELECTRICAL CHARACTERISTICS FOR ISET = 130µA VCC+ = +10V, VCC- = 0V, Tamb = 25oC (unless otherwise specified) Symbol Vio Parameter Input Offset Voltage VO = 1.4V, V ic = 0V TS271C/I/M TS271AC/AI/AM TS271BC/BI/BM Tmin. ≤ Tamb ≤ Tmax. TS271C/I/M TS271AC/AI/AM TS271BC/BI/BM DVio Iio Input Offset Voltage Drift Input Offset Current - (note 1) Vic = 5V, Vo = 5V Tmin. ≤ Tamb ≤ Tmax. Input Bias Current - (note 1) Vic = 5V, Vo = 5V Tmin. ≤ Tamb ≤ Tmax. High Level Output Voltage Vid = 100mV, R L = 10kΩ Tmin. ≤ Tamb ≤ Tmax. Low Level Output Voltage (Vid = -100mV) Large Signal Voltage Gain Vo = 1V to 6V, R L = 10kΩ, Vic = 5V Tmin. ≤ Tamb ≤ Tmax. Gain Bandwidth Product (Av = 40dB, RL = 10kΩ, CL = 100pF, f in = 100kHz) Common Mode Rejection Ratio Vo = 1.4V, Vic = 1V to 7.4V Supply Voltage Rejection Ratio + VCC = 5V to 10V ,Vo = 1.4V Supply Current Av = 1, no load, Vo = 5V Tmin. ≤ Tamb ≤ Tmax. Output Short Circuit Current Vid = 100mV, Vo = 0V Output Sink Current Vid = -100mV, Vo = VCC Slew-Rate at Unity Gain R L = 10kΩ, CL= 100pF, V i = 3 to 7V Phase Margin at Unity Gain Av = 40dB, RL = 10kΩ C L= 10pF C L= 100pF Overshoot Factor C L = 10pF C L = 100pF en Equivalent Input Noise Voltage f = 1kHz, RS = 100Ω 30 30 30 30 30 30 nV  Hz √ 60 60 10 7 15 8.2 8.1 2 1 100 1 150 8.4 50 10 6 15 MHz 2.3 80 70 800 1300 1400 60 60 2.3 dB 80 dB 70 800 1300 1500 µA 8.2 8 8.4 50 mV V/mV 1 300 V TS271C/AC/BC Min. Typ. 1.1 0.9 0.25 Max. 10 5 2 12 6.5 3 2 1 200 pA TS271I/AI/BI TS271M/AM/BM Min. Typ. 1.1 0.9 0.25 Max. mV 10 5 2 12 6.5 3.5 µV/oC pA Unit Iib VOH VOL Avd GBP CMR SVR ICC Io Isink SR ∅m mA 60 45 4.5 60 mA 45 V/µs 4.5 degrees 65 50 65 50 % Kov Note : 1. Maximum values including unavoidable inaccuracies of the industrial test. 11/15 TS271C,I,M TYPICAL CHARACTERISTICS FOR ISET = 130µA Figure 20 : Supply Current (each amplifier) versus Supply Voltage SUPPLYCURRENT, I CC (mA) 1.0 0.8 0.6 0.4 0.2 T amb = 25°C AV = 1 VO = V CC / 2 4 8 12 SUPPLY VOLTAGE, V CC (V) 16 Figure 21 : Input Bias Current versus Free Air Temperature INPUT BIASCURRENT, I IB (pA) 100 VCC = 10V Vic = 5V 10 1 25 50 75 100 TEMPERATURE, T amb (°C) 125 0 Figure 22a : High Level Output Voltage versus High Level Output Current OUTPUT VOLTAGE, V OH (V) 5 4 3 2 VCC = 3V 1 0 T amb = 25°C V id = 100mV VCC = 5V Figure 22b : High Level Output Voltage versus High Level Output Current OUTPUT VOLTAGE, V OH (V) 20 16 12 8 4 0 -50 VCC = 10V T amb = 25°C V id = 100mV VCC = 16V -10 -8 -6 -4 -2 OUTPUT CURRENT, I OH (mA) 0 -40 -30 -20 -10 OUTPUT CURRENT, I OH (mA) 0 Figure 23a : Low Level Output Voltage versus Low Level Output Current 1.0 OUTPUT VOLTAGE,V OL (V) V CC = 3V 0.8 0.6 0.4 0.2 V CC = 5V Figure 23b : Low Level Output Voltage versus Low Level Output Current OUTPUT VOLTAGE,V OL (V) 3 V CC = 10V VCC = 16V 2 T amb = 25°C V ic = 0.5V V id = -100mV 1 2 OUTPUT CURRENT, I OL (mA) 3 1 T amb = 25°C Vic = 0.5V Vid = -100mV 4 8 12 16 OUTPUT CURRENT, I OL (mA) 20 0 0 12/15 TS271C,I,M TYPICAL CHARACTERISTICS FOR ISET = 130µA (continued) Figure 24 : Open Loop Frequency Response and Phase Shift 50 40 GAIN (dB) 30 20 10 0 -10 2 10 PHASE Tamb = 25°C VCC+ = 10V R L = 10k Ω C L = 100pF A VCL = 100 10 3 4 Phase Margin Figure 25 : Gain Bandwidth Product versus Supply voltage GAIN BANDW. PROD., GBP (kHz) 5 4 3 2 1 Tamb = 25 °C R L = 10kΩ C L = 100pF AV = 1 45 90 135 Gain Bandwidth Product 5 6 180 10 7 10 10 10 FREQUENCY, f (Hz) PHASE(Degrees) GAIN 0 0 4 8 12 SUPPLY VOLTAGE, V CC (V) 16 Figure 26 : Phase Margin versus Supply Voltage PHASE MARGIN, φ m (Degrees) 50 40 30 20 10 Tamb = 25°C R L = 10k Ω C L = 100pF AV = 1 4 8 12 SUPPLY VOLTAGE, VCC (V) 16 Figure 27 : Phase Margin versus Capacitive Load PHASEMARGIN, φ m (Degrees) 70 Tamb = 25°C R L= 10k Ω AV = 1 VCC = 10V 60 50 40 30 0 20 40 60 80 CAPACITANCE, C L (pF) 100 0 Figure 28 : Slew Rates versus Supply Voltage 5 SLEW RATES, SR (V/ µs) SR 4 SR 3 2 1 0 T amb = 25°C R L = 10kΩ C L = 100pF 4 6 8 10 12 14 SUPPLY VOLTAGE, V CC (V) 16 13/15 TS271C,I,M PACKAGE MECHANICAL DATA 8 PINS - PLASTIC DIP Dimensions A a1 B b b1 D E e e3 e4 F i L Z Min. 0.51 1.15 0.356 0.204 7.95 Millimeters Typ. 3.32 Max. Min. 0.020 0.045 0.014 0.008 0.313 Inches Typ. 0.131 Max. 1.65 0.55 0.304 10.92 9.75 2.54 7.62 7.62 6.6 5.08 3.81 1.52 0.065 0.022 0.012 0.430 0.384 0.100 0.300 0.300 0260 0.200 0.150 0.060 3.18 0.125 14/15 271-07.TBL PM-DIP8.EPS TS271C,I,M PACKAGE MECHANICAL DATA 8 PINS - PLASTIC MICROPACKAGE (SO) Dimensions A a1 a2 a3 b b1 C c1 D E e e3 F L M S Min. 0.1 0.65 0.35 0.19 0.25 4.8 5.8 Millimeters Typ. Max. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 5.0 6.2 o Min. 0.004 0.026 0.014 0.007 0.010 0.189 0.228 Inches Typ. Max. 0.069 0.010 0.065 0.033 0.019 0.010 0.020 0.197 0.244 1.27 3.81 3.8 0.4 4.0 1.27 0.6 8 (max.) o 0.050 0.150 0.150 0.016 0.157 0.050 0.024 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. ORDER CODE : © 1997 SGS-THOMSON Microelectronics – Printed in Italy – All Rights Reserved SGS-THOM SON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 15/15 SO8.TBL PM-SO8.EPS