TXDVxx12
12 A high voltage Triacs
Features
A2
■
On-state current (IT(RMS)): 12 A
■
Max. blocking voltage (VDRM/VRRM): 1200 V
■
Gate current (IGT): 100 mA
■
Commutation @ 10 V/µs: up to 42.5 A/ms
■
Noise immunity: 2 kV/µs
■
Insulated package:
– 2,500 V rms (UL recognized: E81734).
G
A1
Description
A1
A2
The TXDVxx12 series uses a high performance
alternistor technology.
TO-220AB
insulated
Featuring very high commutation levels and high
surge current capability, these devices are well
adapted to power control for inductive and
resistive loads (motor, transformer...) especially
on three-phase power grid. Targeted three-phase
applications include heating systems, motor
starters, and induction motor speed control
(especially for fans).
Table 1.
G
Device summary
Parameter
Blocking voltage VDRM/VRRM
TXDV812RG
TXDV1212RG
800 V
1200 V
On-state current IT(RMS)
12 A
100 mA
Gate current IGT
January 2012
Doc ID 18272 Rev 2
1/7
www.st.com
7
Characteristics
TXDVxx12
1
Characteristics
Table 2.
Absolute maximum ratings (limiting values)
Symbol
Parameter
IT(RMS)
On-state rms current (180° conduction angle)
VDRM
VRRM
Repetitive peak off-state voltage
Value
Unit
12
A
800
V
Tc = 90 °C
TXDV812
TXDV1212
Tj = 125 °C
1200
tp = 2.5 ms
ITSM
I2t
Non repetitive surge peak on-state current
I2t
value for fusing
dI/dt
Critical rate of rise of on-state current
IG = 500 mA dIG/dt = 1 A/µs
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
tp = 8.3 ms
170
Tj = 25 °C
125
A
tp = 10 ms
120
tp = 10 ms
72
A2 S
F = 50 Hz
100
A/µs
- 40 to + 150
- 40 to + 125
°C
2500
V
VINS(RMS)(1) Insulation rms voltage
1. A1, A2, gate terminals to case for 1 minute
Table 3.
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Value
Symbol
Test conditions
TXDV812
IGT
VGT
VGD
VD = 12 V DC, RL = 33 Ω
VD = VDRM
RL = 3.3 kΩ
Tj = 110 °C
tgt
VD = VDRM IG = 500 mA dIG/dt = 3 A/µs
IL
IG = 1.2 x IGT
IH (1)
IT = 500 mA
dV/dt (1)
VTM
(1)
ITM = 17 A
Vto
(1)
Rd
(1)
IDRM
IRRM
MAX.
100
mA
I-II-III
MAX.
1.5
V
I-II-III
MIN.
0.2
V
I-II-III
TYP.
2.5
µs
II
Gate open
(dI/dt)c (1) (dV/dt)c = 10 V/µs
100
TYP.
mA
200
MAX.
100
mA
Tj = 125 °C
MIN.
2
kV/µs
Tj = 110 °C
MIN.
tp = 380 µs
42.5
30
A/ms
MAX.
1.95
V
Threshold voltage
MAX.
1.21
V
Dynamic resistance
MAX.
40
mΩ
VDRM = VRRM
Tj = 25 °C
Tj = 110 °C
1. For either polarity of electrode A2 voltage with reference to electrode A1.
2/7
TXDV1212
I-II-III
I-III
Linear slope up to:
VD = 67% VDRM Gate open
Unit
Quadrant
Doc ID 18272 Rev 2
MAX.
0.01
2
5
mA
TXDVxx12
Characteristics
Table 4.
Gate characteristics (maximum values)
Symbol
Parameter
PG(AV)
Value
Unit
1
W
Average gate power dissipation
PGM
Peak gate power dissipation
tp = 20 µs
10
W
IGM
Peak gate current
tp = 20 µs
4
A
VGM
Peak positive gate voltage
tp = 20 µs
16
V
Value
Unit
Junction to ambient
60
°C/W
Rth(j-c) DC
Junction to case for DC
2.5
°C/W
Rth(j-c) AC
Junction to case for 360 °Conduction angle (F = 50 Hz)
1.9
°C/W
Table 5.
Thermal resistance
Symbol
Parameter
Rth(j-a)
Figure 1.
Max. rms power dissipation versus Figure 2.
on-state rms current (F = 50Hz).
(curves limited by (dI/dt)c)
Max. rms power dissipation and
max. allowable temperatures
(Tamb and Tcase) for various Rth
P(W)
P(W)
20
Tcase(° C)
20
18
18
α = 180°
16
Rth case to ambient
Rth = 0° C/W
1° C/W
2° C/W
4° C/W
16
α = 120°
14
12
6
α = 30°
180°
α
α
IT(RMS)(A)
1
2
Figure 3.
3
4
5
6
8
-110
6
-115
4
-120
2
0
0
-105
10
α = 60°
2
-100
12
10
4
-95
14
α = 90°
8
-90
7
8
9
10
11
12
On-state rms current versus case
temperature
Tamb(° C)
-125
0
0
20
Figure 4.
40
60
80
100
120
140
Relative variation of thermal
impedance versus pulse duration
Zth/Rth
IT(RMS)(A)
14
1
12
Zth(j-c)
10
α = 180°
8
Zth(j-a)
0.1
6
4
2
TC(°C)
tp(s)
0
0.01
0
10
20
30
40
50
60
70
80
90
100 110 120 130
1E-3
Doc ID 18272 Rev 2
1E-2
1E-1
1E+0
1E+1
1E+2
5E+2
3/7
Characteristics
Figure 5.
TXDVxx12
Relative variation of gate trigger
Figure 6.
current and holding current versus
junction temperature
Non repetitive surge peak on-state
current versus number of cycles
ITSM(A)
IGT[Tj]
. IH[Tj]
IGT[Tj=25°C] IH[Tj=25°C]
120
2.5
100
t = 20 ms
2.0
One cycle
80
1.5
IGT
60
IH
Tj initial=25°C
1.0
40
0.5
20
Tj(°C)
0.0
-40 -30 -20 -10
Figure 7.
0
10
20
30
40
Number of cycles
50
60
70
80
0
90 100 110
0
10
Non-repetitive surge peak on-state Figure 8.
current for a sinusoidal pulse and
corresponding values of I2t
100
1000
On-state characteristics (maximum
values)
ITM(A)
ITSM(A), I2t (A2s)
1000
Tj max.:
Vt0=1.21V
Rt=0.040Ω
Tj initial = 25°C
ITSM
100
Tj initial = 25° C
100
I2t
10
Tj max.
VTM(V)
tp(ms)
1
10
1
Figure 9.
2
5
10
1
2
Safe turn-off operating area
(dV/dt)c(V/µs)
1000
Tj = 110° C
100
10
(dI/dt)c(A/ms)
1
1
4/7
10
Doc ID 18272 Rev 2
100
3
4
5
6
TXDVxx12
2
Package information
Package information
●
Epoxy meets UL94,V0
●
Cooling method: C (by conduction)
●
Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Table 6.
TO-220AB insulated dimensions
Dimensions
Ref.
Millimeters
Min.
A
15.20
a1
C
B
ØI
F
A
Max.
Min.
Typ.
15.90 0.598
3.75
Max.
0.625
0.147
a2
13.00
14.00 0.511
0.551
B
10.00
10.40 0.393
0.409
b1
0.61
0.88
0.024
0.034
b2
1.23
1.32
0.048
0.051
C
4.40
4.60
0.173
0.181
c1
0.49
0.70
0.019
0.027
c2
2.40
2.72
0.094
0.107
e
2.40
2.70
0.094
0.106
F
6.20
6.60
0.244
0.259
ØI
3.75
3.85
0.147
0.151
I4
15.80 16.40 16.80 0.622 0.646 0.661
L
2.65
2.95
0.104
0.116
l2
1.14
1.70
0.044
0.066
l3
1.14
1.70
0.044
0.066
b2
L
Typ.
Inches
I4
l3
c2
a1
l2
a2
M
b1
c1
e
M
Doc ID 18272 Rev 2
2.60
0.102
5/7
Ordering information
3
Ordering information
Table 7.
4
Ordering information
Order code
Marking
Package
Weight
TXDV812RG
TXDV812
TXDV1212
TO-220AB
insulated
2.3 g
TXDV1212RG
Base qty Delivery mode
50
Revision history
Table 8.
6/7
TXDVxx12
Document revision history
Date
Revision
Changes
30-Mar-2011
1
Initial release.
13-Jan-2012
2
Updated dI/dt in Table 2, and added Vto and Rd in Table 3
Doc ID 18272 Rev 2
Tube
TXDVxx12
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