TYN610

T YN 0510 ---> TYN 1010 SCR . . . FEATURES HIGH SURGE CAPABILITY HIGH ON-STATE CURRENT HIGH STABILITY AND RELIABILITY DESCRIPTION The TYN 0510 ---> TYN 1010 Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle, single phase circuit) Non repetitive surge peak on-state current ( Tj initial = 25°C ) I2 t value Critical rate of rise of on-state current Gate supply : IG = 100 mA diG/dt = 1 A/µs Storage and operating junction temperature range Maximum lead temperature for soldering during 10 s at 4.5 mm from case Parameter 0510 VDRM VRRM Repetitive peak off-state voltage Tj = 125 °C 50 110 100 210 200 TYN 410 400 610 600 810 800 1010 1000 V Parameter Tc = 100 °C Tc = 100 °C tp = 8.3 ms tp = 10 ms tp = 10 ms Value 10 6.4 105 100 50 50 - 40 to + 150 - 40 to + 125 260 A2s A/µs °C °C °C Unit A A A K A G TO220AB (Plastic) I2t dI/dt Tstg Tj Tl Symbol Unit March 1995 1/4 TYN 0510 ---> TYN 1010 THERMAL RESISTANCES Symbol Rth (j-a) Junction to ambient Parameter Value 60 2.5 Unit °C/W °C/W Rth (j-c) DC Junction to case for DC GATE CHARACTERISTICS (maximum values) PG (AV) = 1W PGM = 10W (tp = 20 µs) IFGM = 4A (tp = 20 µs) VRGM = 5 V. ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IL IH VTM IDRM IRRM dV/dt tq VD=12V VD=12V Test Conditions (DC) RL=33Ω (DC) RL=33Ω Tj=25°C Tj=25°C Tj= 110°C Tj=25°C Tj=25°C gate open Tj=25°C Tj=25°C Tj=25°C Tj= 110°C Tj= 110°C Tj= 110°C MIN TYP MAX MAX MIN TYP TYP MAX MAX MAX Value 15 1.5 0.2 2 50 30 1.6 0.01 2 200 70 V/µs µs Unit mA V V µs mA mA V mA VD=VDRM RL=3.3kΩ VD=VDRM IG = 40mA dIG/dt = 0.5A/µs IG= 1.2 IGT IT= 100mA ITM= 20A tp= 380µs VDRM VRRM Rated Rated Linear slope up to VD=67%VDRM gate open VD=67%VDRM ITM = 20A VR= 25V dITM/dt=30 A/µs dVD/dt= 50V/µs 2/4 TYN 0510 ---> TYN 1010 Fig.1 : Maximum average power dissipation versus average on-state current. Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and T case) for different thermal resistances heatsink + contact. P (W) 360 O P (W) Tcase (o C) Rth = 0 o C/W 2 o C/W 4 o C/W 6 o C/W 12 10 8 6 = 120 o 12 10 DC o -100 -105 -110 8 6 = 180 o = 180 4 2 = 30 o = 90 = 60 o o 4 2 I T(AV)(A) Tamb ( C) o -115 -120 20 40 60 80 100 120 -125 140 0 0 1 2 3 4 5 6 7 8 9 0 0 Fig.3 : Average temperature. I T(AV) (A) on-state current versus case Fig.4 : Relative variation of thermal impedance versus pulse duration. Zth/Rth 1 DC Zt h( j-c) 12 10 8 6 4 2 Tcase ( C) o = 180 o 0.1 Zt h( j-a) tp (s) 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.01 1E-3 1E-2 1E-1 1E +0 1 E +1 1E +2 5 E+2 Fig.5 : Relative variation of gate trigger current versus junction temperature. Fig.6 : Non repetitive surge peak on-state current versus number of cycles. 3/4 TYN 0510 ---> TYN 1010 Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10 ms, and corresponding value of I2t. Fig.8 : On-state characteristics (maximum values). PACKAGE MECHANICAL DATA TO220AB Plastic REF. A H G I J D B F P O L C M =N= A B C D F G H I J L M N O P DIMENSIONS Millimeters Inches Min. Max. Min. Max. 10.00 10.40 0.393 0.409 15.20 15.90 0.598 0.625 13.00 14.00 0.511 0.551 6.20 6.60 0.244 0.259 3.50 4.20 0.137 0.165 2.65 2.95 0.104 0.116 4.40 4.60 0.173 0.181 3.75 3.85 0.147 0.151 1.23 1.32 0.048 0.051 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 4.80 5.40 0.188 0.212 1.14 1.70 0.044 0.066 0.61 0.88 0.024 0.034 Cooling method : C Marking : type number Weight : 2.3 g Recommended torque value : 0.8 m.N. Maximum torque value : 1 m.N. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. © 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 4/4