VNP20N07FI
VNB20N07/VNV20N07
®
"OMNIFET":
FULLY AUTOPROTECTED POWER MOSFET
TYPE
V clamp
R DS(on)
I lim
VNP20N07FI
VNB20N07
VNV20N07
70 V
70 V
70 V
0.05 Ω
0.05 Ω
0.05 Ω
20 A
20 A
20 A
■
■
■
■
■
■
■
■
■
LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
ESD PROTECTION
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
COMPATIBLE WITH STANDARD POWER
MOSFET
DESCRIPTION
The VNP20N07FI, VNB20N07 and VNV20N07
are
monolithic
devices
made
using
STMicroelectronics VlPower M0 Technology,
intended for replacement of standard power
MOSFETS in DC to 50 KHz applications. Built-in
thermal shut-down, linear current limitation and
overvoltage clamp protect the chip in harsh
ISOWATT220
3
1
2
10
3
1
D2PAK
TO-263
1
PowerSO-10
enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
BLOCK DIAGRAM (∗)
(∗) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB
September 2013
1/13
VNP20N07FI-VNB20N07-VNV20N07
ABSOLUTE MAXIMUM RATING
Symbol
Parameter
Value
PowerSO-10
D2PAK
V DS
Drain-source Voltage (V in = 0)
V in
Unit
ISOWATT220
Internally Clamped
V
Input Voltage
18
V
ID
Drain Current
Internally Limited
A
IR
Reverse DC Output Current
-28
A
2000
V
V esd
Ptot
Tj
Tc
T stg
Electrostatic Discharge (C= 100 pF, R=1.5 KΩ)
o
Total Dissipation at T c = 25 C
83
Operating Junction Temperature
Case Operating Temperature
Storage Temperature
34
W
Internally Limited
o
C
Internally Limited
o
C
-55 to 150
o
C
THERMAL DATA
R thj-case Thermal Resistance Junction-case
R thj-amb Thermal Resistance Junction-ambient
ISOWATT220
PowerSO-10
D2PAK
3.75
62.5
1.5
50
1.5
62.5
Max
Max
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
V CLAMP
Drain-source Clamp
Voltage
I D = 200 mA
V CLTH
Drain-source Clamp
Threshold Voltage
I D = 2 mA
V INCL
Input-Source Reverse
Clamp Voltage
I in = -1 mA
I DSS
Zero Input Voltage
Drain Current (V in = 0)
V DS = 13 V
V DS = 25 V
II SS
Supply Current from
Input Pin
V DS = 0 V
V in = 0
V in = 0
Min.
Typ.
Max.
Unit
60
70
80
V
55
V
-1
-0.3
V
50
200
µA
µA
250
500
µA
Typ.
Max.
Unit
3
V
0.05
0.07
Ω
Ω
Max.
Unit
V in = 0
V in = 0
V in = 10 V
ON (∗)
Symbol
Parameter
Test Conditions
Min.
I D + Ii n = 1 mA
0.8
V IN(th)
Input Threshold
Voltage
V DS = Vin
R DS(on)
Static Drain-source On
Resistance
V in = 10 V I D = 10 A
V in = 5 V
I D = 10 A
DYNAMIC
Symbol
g fs (∗)
C oss
2/13
Parameter
Test Conditions
Forward
Transconductance
V DS = 13 V
I D = 10 A
Output Capacitance
V DS = 13 V
f = 1 MHz
V in = 0
Min.
Typ.
13
17
500
S
800
pF
VNP20N07FI-VNB20N07-VNV20N07
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (∗∗)
Symbol
Typ.
Max.
Unit
t d(on)
tr
t d(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V DD = 15 V
V gen = 10 V
(see figure 3)
I d = 10 A
R gen = 10 Ω
90
240
430
150
180
400
800
300
ns
ns
ns
ns
t d(on)
tr
t d(off)
tf
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
V DD = 15 V
V gen = 10 V
(see figure 3)
I d = 10 A
R gen = 1000 Ω
800
1.5
6
3.5
1200
2.2
10
5.5
ns
µs
µs
µs
Turn-on Current Slope
V DD = 15 V
V in = 10 V
Total Input Charge
V DD = 12 V
(di/dt) on
Qi
Parameter
Test Conditions
Min.
I D = 10 A
R gen = 10 Ω
I D = 10 A
V in = 10 V
60
A/µs
60
nC
SOURCE DRAIN DIODE
Symbol
V SD (∗)
t rr (∗∗)
Q rr (∗∗)
I RRM (∗∗)
Parameter
Test Conditions
Forward On Voltage
I SD = 10 A
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I SD = 10 A
di/dt = 100 A/µs
V DD = 30 V
T j = 25 o C
(see test circuit, figure 5)
Min.
Typ.
V in = 0
Max.
Unit
1.6
V
165
ns
0.55
µC
6.5
A
PROTECTION
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V DS = 13 V
V DS = 13 V
14
14
20
20
28
28
A
A
29
70
60
140
µs
µs
Drain Current Limit
V in = 10 V
V in = 5 V
t dlim (∗∗)
Step Response
Current Limit
V in = 10 V
V in = 5 V
T jsh (∗∗)
Overtemperature
Shutdown
150
o
C
T jrs (∗∗)
Overtemperature Reset
135
o
C
I gf (∗∗)
Fault Sink Current
V in = 10 V
V in = 5 V
E as (∗∗)
Single Pulse
Avalanche Energy
starting T j = 25 o C
V DD = 20 V
V in = 10 V R gen = 1 KΩ L = 10 mH
I lim
50
20
0.95
mA
mA
J
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(∗∗) Parameters guaranteed by design/characterization
3/13
VNP20N07FI-VNB20N07-VNV20N07
PROTECTION FEATURES
During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user’s standpoint is that a small DC
current (Iiss) flows into the Input pin in order to
supply the internal circuitry.
The device integrates:
- OVERVOLTAGE
CLAMP
PROTECTION:
internally set at 70V, along with the rugged
avalanche characteristics of the Power
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
inductive loads.
- LINEAR CURRENT LIMITER CIRCUIT: limits
the drain current Id to Ilim whatever the Input
pin voltage. When the current limiter is active,
the device operates in the linear region, so
power dissipation may exceed the capability of
the heatsink. Both case and junction
temperatures increase, and if this phase lasts
long enough, junction temperature may reach
the overtemperature threshold Tjsh.
4/13
- OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing
the chip temperature and are not dependent on
the input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperature cutout occurs at
minimum 150oC. The device is automatically
restarted when the chip temperature falls
below 135oC.
- STATUS FEEDBACK: In the case of an
overtemperature fault condition, a Status
Feedback is provided through the Input pin.
The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 100 Ω.
The failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit (with a small increase in RDS(on)).
VNP20N07FI-VNB20N07-VNV20N07
Thermal Impedance For ISOWATT220
Thermal Impedance For D2PAK / PowerSO-10
Derating Curve
Output Characteristics
Transconductance
Static Drain-Source On Resistance vs Input
Voltage
5/13
VNP20N07FI-VNB20N07-VNV20N07
Static Drain-Source On Resistance
Static Drain-Source On Resistance
Input Charge vs Input Voltage
Capacitance Variations
Normalized Input Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
6/13
VNP20N07FI-VNB20N07-VNV20N07
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-on Current Slope
Turn-off Drain-Source Voltage Slope
Turn-off Drain-Source Voltage Slope
Switching Time Resistive Load
7/13
VNP20N07FI-VNB20N07-VNV20N07
Switching Time Resistive Load
Switching Time Resistive Load
Current Limit vs Junction Temperature
Step Response Current Limit
Source Drain Diode Forward Characteristics
8/13
VNP20N07FI-VNB20N07-VNV20N07
Fig. 1: Unclamped Inductive Load Test Circuits
Fig. 2: Unclamped Inductive Waveforms
Fig. 3: Switching Times Test Circuits For
Resistive Load
Fig. 4: Input Charge Test Circuit
Fig. 5: Test Circuit For Inductive Load Switching
And Diode Recovery Times
Fig. 6: Waveforms
9/13
VNP20N07FI-VNB20N07-VNV20N07
ISOWATT220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.4
0.7
0.015
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
L2
0.409
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F2
H
G
G1
¯
F
F1
L7
1 2 3
L2
10/13
L4
P011G
VNP20N07FI-VNB20N07-VNV20N07
TO-263 (D2PAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.3
4.6
0.169
0.181
A1
2.49
2.69
0.098
0.106
B
0.7
0.93
0.027
0.036
B2
1.25
1.4
0.049
0.055
C
0.45
0.6
0.017
0.023
C2
1.21
1.36
0.047
0.053
D
8.95
9.35
0.352
0.368
E
10
10.28
0.393
0.404
G
4.88
5.28
0.192
0.208
L
15
15.85
0.590
0.624
L2
1.27
1.4
0.050
0.055
L3
1.4
1.75
0.055
0.068
E
A
C2
L2
D
L
L3
B2
B
A1
C
G
P011P6/C
11/13
VNP20N07FI-VNB20N07-VNV20N07
PowerSO-10 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
3.35
3.65
0.132
0.144
A1
0.00
0.10
0.000
0.004
B
0.40
0.60
0.016
0.024
c
0.35
0.55
0.013
0.022
D
9.40
9.60
0.370
0.378
D1
7.40
7.60
0.291
0.300
E
9.30
9.50
0.366
0.374
E1
7.20
7.40
0.283
0.291
E2
7.20
7.60
0.283
0.300
E3
6.10
6.35
0.240
0.250
E4
5.90
6.10
0.232
e
1.27
0.240
0.050
F
1.25
1.35
0.049
0.053
H
13.80
14.40
0.543
0.567
1.80
0.047
h
0.50
L
0.002
1.20
q
1.70
α
0.071
0.067
0o
8o
B
0.10 A B
10
=
E4
=
=
=
E1
=
E3
=
E2
=
E
=
=
=
H
6
=
=
1
5
B
e
0.25
SEATING
PLANE
DETAIL "A"
A
C
M
Q
D
h
= D1 =
=
=
SEATING
PLANE
A
F
A1
A1
L
DETAIL "A"
α
0068039-C
12/13
VNP20N07FI/VNB20N07/VNV20N07
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE
SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B)
AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS
OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT
PURCHASER’S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS
EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR “AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL” INDUSTRY
DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE
DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2013 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
DocID1644 Rev 4
13/13
13
很抱歉,暂时无法提供与“VNV20N07”相匹配的价格&库存,您可以联系我们找货
免费人工找货