WS57C256F-55TMB

WS57C256F HIGH SPEED 32K x 8 CMOS EPROM • Fast Access Time — t ACC = 35 ns — t CE = 35 ns KEY FEATURES • Immune to Latch-UP — Up to 200 mA • Low Power Consumption — 200 µA Standby ICC • ESD Protection Exceeds 2000 Volts • Available in 300 Mil DIP and PLDCC • DESC SMD No. 5962-86063 GENERAL DESCRIPTION The WS57C256F is a High Performance 32K x 8 UV Erasable EPROM. It is manufactured using an advanced CMOS process technology enabling it to operate at speeds as fast as 35 ns Address Access Time (tACC) and 35 ns Chip Enable Time (t CE). It was designed utilizing WSI's patented self-aligned split gate EPROM cell, resulting in a low power device with a very cost effective die size. The low standby power capability of this 256 K product (200 µA in a CMOS interface environment) is especially attractive. This product, with its high speed capability, is particularly appropriate for use with today's fast DSP processors and high-clock-rate Microprocessors. The WS57C256F's 35 ns speed enables these advanced processors to operate without introducing any undesirable wait states. The WS57C256F is also ideal for use in modem applications, and is recommended for use in these applications by the leading modem chip set manufacturer. The WS57C256F is available in a variety of package types including the space saving 300 Mil DIP, the surface mount PLDCC, and other windowed and non-windowed options. And its standard JEDEC EPROM pinouts provide for automatic upgrade density paths for current 64K and 128K EPROM users. MODE SELECTION PINS MODE Read Output Disable Standby Program Program Verify Program Inhibit Signature3 CE/ PGM VIL X VIH VIL X VIH VIL VIL OE VIL VIH X VIH VIL VIH VIL VIL A9 X X X X X X A0 X X X X X X VPP VCC OUTPUTS PIN CONFIGURATION TOP VIEW Chip Carrier A7 A12 VPP NC VCC A14 A13 CERDIP VPP A12 A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC A14 A13 A8 A9 A11 OE A10 CE/PGM O7 O6 O5 O4 O3 VCC VCC VCC VCC VCC VCC VPP 2 VCC VPP 2 VCC VPP2 VCC DOUT High Z High Z DIN DOUT High Z 23 H4 EO H 5 A6 A5 A4 A3 A2 A1 A0 NC O0 VH2 VIL VCC VCC VH2 VIH VCC VCC 32 31 30 1 5 29 6 28 7 27 8 26 9 25 10 24 11 23 12 22 13 21 14 15 16 17 18 19 20 O1 O2 GND 432 A8 A9 A11 NC OE A10 CE/PGM O7 O6 NC O3 O4 O5 NOTES: 1. X can be VIL or VIH. 2. VIH = VPP = 12.75 ± 0.25 V. 3. A1 – A8, A10 – A14 = VIL. 4. Manufacturer Signature. 5. Device Signature. PRODUCT SELECTION GUIDE PARAMETER Address Access Time (Max) Output Enable Time (Max) WS57C256F-35 35 ns 15 ns WS57C256F-45 45 ns 20 ns WS57C256F-55 55 ns 25 ns WS57C256F-70 70 ns 30 ns Return to Main Menu 3-13 WS57C256F ABSOLUTE MAXIMUM RATINGS* Storage Temperature............................–65° to + 150°C Voltage on any Pin with Respect to Ground ....................................–0.6V to +7V VPP and A 9 with Respect to Ground ......–0.6V to + 14V ESD Protection ..................................................> 2000V *NOTICE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect device reliability. OPERATING RANGE RANGE Commercial Industrial Military TEMPERATURE 0°C to +70°C –40°C to +85°C –55°C to +125°C VCC +5V ± 10% +5V ± 10% +5V ± 10% DC READ CHARACTERISTICS Over Operating Range with VPP = VCC SYMBOL VIL VIH VOL VOH ISB1 ISB2 ICC1 ICC2 IPP VPP ILI ILO NOTES: PARAMETER Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage VCC Standby Current (CMOS) VCC Standby Current (TTL) VCC Active Current (CMOS) VCC Active Current (TTL) VPP Supply Current VPP Read Voltage Input Leakage Current Output Leakage Current TEST CONDITIONS (Note 4) (Note 4) IOL = 16 mA IOH = – 4 mA CE = VCC ± 0.3 V (Note 1) CE = VIH (Note 2) (Notes 1 and 3) Outputs Not Loaded (Notes 2 and 3) Outputs Not Loaded VPP = VCC Comm'l Ind/Mil Comm'l Ind/Mil Comm'l Ind/Mil Comm'l Ind/Mil MIN – 0.1 2.0 2.4 MAX 0.8 VCC + 0.3 0.4 200 500 3 5 25 30 50 60 100 UNITS V V V V µA µA mA mA mA mA mA mA µA V µA µA VCC – 0.4 VIN = 5.5V or Gnd VOUT = 5.5 V or Gnd –10 –10 VCC 10 10 1. CMOS inputs: GND ± 0.3V or VCC ± 0.3V. 2. TTL inputs: VIL ≤ 0.8V, VIH ≥ 2.0V. 3. Add 3 mA/MHz for A.C. power component. 4. These are absolute voltages with respect to device ground pin and include all overshoots due to system and/or tester noise. Do not attempt to test these values without suitable equipment. AC READ CHARACTERISTICS Over Operating Range. with VPP = VCC PARAMETER Address to Output Delay CE to Output Delay OE to Output Delay Output Disable to Output Float Address to Output Hold SYMBOL tACC tCE tOE tDF tOH 0 57C256F-35 MIN MAX 57C256F-45 MIN MAX 57C256F-55 MIN MAX 57C256F-70 MIN MAX UNITS 35 35 15 20 0 45 45 20 20 0 55 55 25 25 0 70 70 30 30 ns 3-14 WS57C256F AC READ TIMING DIAGRAM ADDRESSES tACC CE VALID tOH tCE OE tDF tOE OUTPUTS VALID tDF CAPACITANCE (5) TA = 25°C, f = 1 MHz SYMBOL C IN C OUT C VPP PARAMETER Input Capacitance Output Capacitance VPP Capacitance CONDITIONS VIN = 0V VOUT = 0V VPP = 0 V TYP (6) 4 8 18 MAX 6 12 25 UNITS pF pF pF NOTES: 5. This parameter is only sampled and is not 100% tested. 6. Typical values are for TA = 25°C and nominal supply voltages. TEST LOAD (High Impedance Test Systems) A.C. TESTING INPUT/OUTPUT WAVEFORM 98 Ω 2.01 V D.U.T. 3.0 2.0 0.8 TEST POINTS 2.0 0.8 30 pF (INCLUDING SCOPE AND JIG CAPACITANCE) 0.0 A.C. testing inputs are driven at 3.0 V for a logic "1" and 0.0 V for a logic "0." Timing measurements are made at 2.0 V for a logic "1" and 0.8 V for a logic "0". NOTE: 7. Provide adequate decoupling capacitance as close as possible to this device to achieve the published A.C. and D.C. parameters. A 0.1 microfarad capacitor in parallel with a 0.01 microfarad capacitor connected between VCC and ground is recommended. Inadequate decoupling may result in access time degradation or other transient performance failures. 3-15 WS57C256F PROGRAMMING INFORMATION DC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V) SYMBOLS ILI IPP ICC VOL VOH NOTE: PARAMETER Input Leakage Current (VIN = VCC or Gnd) VPP Supply Current During Programming Pulse (CE/ PGM = VIL) VCC Supply Current (Note 8) Output Low Voltage During Verify (IOL = 16 mA) Output High Voltage During Verify (IOH = –4 mA) MIN –10 MAX 10 60 35 0.4 UNITS µA mA mA V V 2.4 8. VCC must be applied either coincidentally or before VPP and removed either coincidentally or after VPP. 9. VPP must not be greater than 13 volts including overshoot. During CE = PGM = VIL, VPP must not be switched from 5 volts to 12.5 volts or vice-versa. 10. During power up the PGM pin must be brought high (≥ VIH) either coincident with or before power is applied to VPP. AC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V) SYMBOLS tAS tCOH tOES tOS tAH tOH tDF tOE tVS/tCES tPW tOCX PARAMETER Address Setup Time CE High to OE High Output Enable Setup Time Data Setup Time Address Hold Time Data Hold Time Chip Disable to Output Float Delay Data Valid From Output Enable VPP Setup Time/CE Setup Time PGM Pulse Width OE Low to CE "Don't Care" 2 100 2 200 MIN 2 2 2 2 0 2 0 130 130 TYP MAX UNITS µs µs µs µs µs µs ns ns µs µs µs PROGRAMMING WAVEFORM ADDRESSES tAS DATA tOS VPP VPP VCC tVS DATA IN STABLE tOH HIGH Z tOE ADDRESS STABLE tAH DATA OUT VALID tDF VIH CE/PGM VIL tCES tOCX tCOH tPW VIH OE VIL tOES 3-16 WS57C256F ORDERING INFORMATION PART NUMBER WS57C256F-35C WS57C256F-35D WS57C256F-35J WS57C256F-35L WS57C256F-35P WS57C256F-35T WS57C256F-45C WS57C256F-45D WS57C256F-45P WS57C256F-45T WS57C256F-55C WS57C256F-55CMB WS57C256F-55D WS57C256F-55DM WS57C256F-55DMB WS57C256F-55J WS57C256F-55L WS57C256F-55P WS57C256F-55T WS57C256F-55TMB WS57C256F-70CMB* WS57C256F-70D WS57C256F-70DMB* WS57C256F-70J WS57C256F-70JI WS57C256F-70T SPEED (ns) 35 35 35 35 35 35 45 45 45 45 55 55 55 55 55 55 55 55 55 55 70 70 70 70 70 70 PACKAGE TYPE 32 Pad CLLCC 28 Pin CERDIP, 0.6" 32 Pin PLDCC 32 Pin CLDCC 28 Pin Plastic DIP, 0.6" 28 Pin CERDIP, 0.3" 32 Pad CLLCC 28 Pin CERDIP, 0.6" 28 Pin Plastic DIP, 0.6" 28 Pin CERDIP, 0.3" 32 Pad CLLCC 32 Pad CLLCC 28 Pin CERDIP, 0.6" 28 Pin CERDIP, 0.6" 28 Pin CERDIP, 0.6" 32 Pin PLDCC 32 Pin CLDCC 28 Pin Plastic DIP, 0.6" 28 Pin CERDIP, 0.3" 28 Pin CERDIP, 0.3" 32 Pad CLLCC 28 Pin CERDIP, 0.6" 28 Pin CERDIP, 0.6" 32 Pin PLDCC 32 Pin PLDCC 28 Pin CERDIP, 0.3" OPERATING WSI PACKAGE DRAWING TEMPERATURE MANUFACTURING RANGE PROCEDURE C2 D2 J4 L3 P3 T2 C2 D2 P3 T2 C2 C2 D2 D2 D2 J4 L3 P3 T2 T2 C2 D2 D2 J4 J4 T2 Comm’l Comm’l Comm’l Comm’l Comm’l Comm’l Comm’l Comm’l Comm’l Comm’l Comm’l Military Comm’l Military Military Comm’l Comm’l Comm’l Comm’l Military Military Comm’l Military Comm’l Industrial Comm’l Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard Standard MIL-STD-883C Standard Standard MIL-STD-883C Standard Standard Standard Standard MIL-STD-883C MIL-STD-883C Standard MIL-STD-883C Standard Standard Standard NOTE: 11. The actual part marking will not include the initials "WS." *SMD product. See section 4 for DESC SMD number. PROGRAMMING/ALGORITHMS/ERASURE/PROGRAMMERS REFER TO PAGE 5-1 The WS57C256F is programmed using Algorithm D shown on page 5-9. When using Data I/O programmers, algorithm 57C256FB is recommended for use with the WS57C256F for best programming results. Return to Main Menu 3-17