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WS57C51C-45D

WS57C51C-45D

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

  • 描述:

    WS57C51C-45D - HIGH SPEED 16K x 8 CMOS PROM/RPROM - STMicroelectronics

  • 数据手册
  • 价格&库存
WS57C51C-45D 数据手册
WS57C51C HIGH SPEED 16K x 8 CMOS PROM/RPROM KEY FEATURES • Very Fast Access Time — 35 ns • Pin Compatible with Am27S51 and N82HS1281 • Immune to Latch-Up — Up to 200 mA • Low Power Consumption • Fast Programming • ESD Protection Exceeds 2000 V GENERAL DESCRIPTION The WS57C51C is a High Performance 128K UV Erasable Electrically Re-Programmable Read Only Memory (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25% of the power required by its Bipolar counterparts. A further advantage of the WS57C51C over Bipolar PROM devices is the fact that it utilizes a proven EPROM technology. This enables the entire memory array to be tested for switching characteristics and functionality after assembly. Unlike devices which cannot be erased, every WS5751C in a windowed package is 100% tested with worst case test patterns both before and after assembly. The WS57C51C provides a low power alternative to those designs which are committed to a Bipolar PROM footprint. It is a direct drop-in replacement for a Bipolar PROM of the same architecture (16K x 8). No software, hardware or layout changes need be performed. BLOCK DIAGRAM EPROM ARRAY PIN CONFIGURATION TOP VIEW Chip Carrier A6 A7 A8 A9 VCC A10 A11 A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 GND 8 A6 - A13 ROW ADDRESSES ROW DECODER CERDIP 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 VCC A10 A11 A12 A13 CS1/VPP CS2 CS3 CS4 O7 O6 O5 O4 O3 131,072 BITS 6 A0 - A5 COLUMN ADDRESSES COLUMN DECODER SENSE AMPLIFIERS CS1/ VPP CS2 CS3 CS4 8 A5 A4 A3 A2 A1 A0 NC O0 O1 32 31 30 1 5 29 6 28 7 27 8 26 9 25 10 24 11 23 12 22 13 21 14 15 16 17 18 19 20 O2 NC GND 432 A12 A13 CS1/VPP CS2 CS3 CS4 NC O7 O6 O3 NC O4 O5 OUTPUTS PRODUCT SELECTION GUIDE PARAMETER Address Access Time (Max) CS to Output Valid Time (Max) 57C51C-35 35 ns 20 ns 57C51C-45 45 ns 20 ns 57C51C-55 55 ns 25 ns 57C51C-70 70 ns 30 ns Return to Main Menu 2-47 WS57C51C ABSOLUTE MAXIMUM RATINGS* Storage Temperature............................–65° to + 150°C Voltage on any Pin with Respect to Ground ....................................–0.6V to +7V VPP with Respect to Ground...................–0.6V to + 14V ESD Protection ..................................................> 2000V MODE SELECTION PINS CS1/ MODE Read Output Disable Output Disable Output Disable Output Disable Program Program Verify VPP CS2 CS3 CS4 VCC OUTPUTS VIL VIH X X X VPP VIL VIL X VIH X X VIH VIL VIH X X VIL X X VIH VIL X X X VIH X VIL VCC VCC VCC VCC VCC VCC VCC DOUT High Z High Z High Z High Z DIN DOUT *NOTICE: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect device reliability. OPERATING RANGE RANGE Commercial Industrial Military TEMPERATURE 0°C to +70°C –40°C to +85°C –55°C to +125°C VCC +5V ± 10% +5V ± 10% +5V ± 10% DC READ CHARACTERISTICS Over Operating Range. (See Above) SYMBOL VIL VIH VOL VOH PARAMETER Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage VCC Active Current (CMOS) (Note 3) (Note 3) IOL = 16 mA IOH = –4 mA VCC = 5.5 V, f = 0 MHz (Note 1), Output Not Loaded Add 4 mA/MHz for AC Operation VCC = 5.5 V, f = 0 MHz (Note 2), Output Not Loaded Add 4 mA/MHz for AC Operation VIN = 5.5V or Gnd VOUT = 5.5 V or Gnd Comm'l Industrial Military Comm'l Industrial Military –10 –10 2.4 30 35 35 50 60 60 10 10 TEST CONDITIONS MIN –0.1 2.0 MAX 0.8 VCC + 0.3 0.4 UNITS V V V V mA mA mA mA mA mA µA µA ICC1 ICC2 VCC Active Current (TTL) Input Leakage Current Output Leakage Current ILI ILO NOTES: 1. CMOS inputs: GND ± 0.3V or VCC ± 0.3V. 2. TTL inputs: VIL ≤ 0.8V, VIH ≥ 2.0V. 3. These are absolute voltages with respect to device ground pin and include all overshoots due to system and/or tester noise. Do not attempt to test these values without suitable equipment. 2-48 WS57C51C AC READ CHARACTERISTICS Over Operating Range. (See Above) PARAMETER SYMBOL 57C51C-35 MIN MAX 57C51C-45 MIN MAX 57C51C-55 MIN MAX 57C51C-70 MIN MAX UNITS Address to Output Delay CS to Output Delay Output Disable to Output Float* Address to Output Hold tACC tCS tDF tOH 0 35 20 20 0 45 20 20 0 55 25 25 0 70 30 25 ns *Sampled, Not 100% Tested. AC READ TIMING DIAGRAM ADDRESSES VALID tACC tOH CSX, CS3 tCS OUTPUTS VALID tDF 2-49 WS57C51C CAPACITANCE (4) TA = 25°C, f = 1 MHz SYMBOL C IN C OUT C VPP PARAMETER Input Capacitance Output Capacitance VPP Capacitance CONDITIONS VIN = 0V VOUT = 0V VPP = 0 V TYP (5) 4 8 18 MAX 6 12 25 UNITS pF pF pF NOTES: 4. This parameter is only sampled and is not 100% tested. 5.Typical values are for TA = 25°C and nominal supply voltages. TEST LOAD (High Impedance Test Systems) A.C. TESTING INPUT/OUTPUT WAVEFORM 98 Ω 2.01 V D.U.T. 3.0 1.5 30 pF (INCLUDING SCOPE AND JIG CAPACITANCE) 0.0 TEST POINTS 1.5 A.C. testing inputs are driven at 3.0 V for a logic "1" and 0.0 V for a logic "0." Timing measurements are made at 1.5 V for input and output transitions in both directions. NOTE: 6. Provide adequate decoupling capacitance as close as possible to this device to achieve the published A.C. and D.C. parameters. A 0.1 microfarad capacitor in parallel with a 0.01 microfarad capacitor connected between VCC and ground is recommended. Inadequate decoupling may result in access time degradation or other transient performance failures. 2-50 WS57C51C NORMALIZED SUPPLY CURRENT vs. SUPPLY VOLTAGE 1.60 40.0 35.0 1.40 30.0 NORMALIZED I CC DELTA Taa (ns) 1.20 25.0 20.0 15.0 10.0 5.0 0.60 4.0 4.5 5.0 5.5 6.0 SUPPLY VOLTAGE ( V ) 0.0 TYPICAL ACCESS TIME CHANGE vs. OUTPUT LOADING 1.00 0.80 0.0 200 400 600 800 1000 CAPACITANCE ( pF ) NORMALIZED Taa vs. AMBIENT TEMPERATURE 1.6 1.2 NORMALIZED SUPPLY CURRENT vs. AMBIENT TEMPERATURE 1.4 1.1 NORMALIZED Taa 1.2 NORMALIZED I CC 1.0 1.0 0.9 0.8 0.6 -55 -35 -15 5 25 45 65 85 105 125 AMBIENT TEMPERATURE (°C ) 0.8 -55 -35 -15 5 25 45 65 85 105 125 AMBIENT TEMPERATURE (°C) 2-51 WS57C51C PROGRAMMING INFORMATION DC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V) SYMBOLS ILI IPP ICC VOL VOH NOTE: PARAMETER Input Leakage Current (VIN = VCC or Gnd) VPP Supply Current During Programming Pulse VCC Supply Current Output Low Voltage During Verify (IOL = 16 mA) Output High Voltage During Verify (IOH = –4 mA) MIN –10 MAX 10 60 25 0.45 UNITS µA mA mA V V 2.4 7. VPP must not be greater than 13 volts including overshoot. AC CHARACTERISTICS (TA = 25 ± 5°C, VCC = 6.25 V ± 0.25 V, VPP = 12.75 ± 0.25 V) SYMBOLS tAS tDF tDS tPW tDH tCS tRF PARAMETER Address Setup Time Chip Disable Setup Time Data Setup Time Program Pulse Width Data Hold Time Chip Select Delay VPP Rise and Fall Time 1 2 100 2 30 200 MIN 2 30 TYP MAX UNITS µs ns µs µs µs ns µs PROGRAMMING WAVEFORM VIH ADDRESSES VIL tAS ADDRESS STABLE VIH DATA VIL tDF VPP tDS tPW tDH tCS DATA IN DATA OUT VIH CS1/VPP VIL tRF tRF 2-52 WS57C51C ORDERING INFORMATION PART NUMBER WS57C51C-35D WS57C51C-35T WS57C51C-35TI WS57C51C-45CMB WS57C51C-45D WS57C51C-45DMB WS57C51C-45J WS57C51C-45JI WS57C51C-45L WS57C51C-45T WS57C51C-45TI WS57C51C-45TMB WS57C51C-55CMB WS57C51C-55D WS57C51C-55DMB WS57C51C-55J WS57C51C-55JI WS57C51C-55L WS57C51C-55T WS57C51C-55TI WS57C51C-55TMB WS57C51C-70D WS57C51C-70T SPEED (ns) 35 35 35 45 45 45 45 45 45 45 45 45 55 55 55 55 55 55 55 55 55 70 70 PACKAGE TYPE 28 Pin CERDIP, 0.6" 28 Pin CERDIP, 0.3" 28 Pin CERDIP, 0.3" 32 Pad CLLCC 28 Pin CERDIP, 0.6" 28 Pin CERDIP, 0.6" 32 Pin PLDCC 32 Pin PLDCC 32 Pin CLDCC 28 Pin CERDIP, 0.3" 28 Pin CERDIP, 0.3" 28 Pin CERDIP, 0.3" 32 Pad CLLCC 28 Pin CERDIP, 0.6" 28 Pin CERDIP, 0.6" 32 Pin PLDCC 32 Pin PLDCC 32 Pin CLDCC 28 Pin CERDIP, 0.3" 28 Pin CERDIP, 0.3" 28 Pin CERDIP, 0.3" 28 Pin CERDIP, 0.6" 28 Pin CERDIP, 0.3" WSI PACKAGE OPERATING TEMPERATURE MANUFACTURING DRAWING RANGE PROCEDURE D2 T2 T2 C2 D2 D2 J4 J4 L3 T2 T2 T2 C2 D2 D2 J4 J4 L3 T2 T2 T2 D2 T2 Comm’l Comm’l Industrial Military Comm’l Military Comm’l Industrial Comm’l Comm’l Industrial Military Military Comm’l Military Comm’l Industrial Comm’l Comm’l Industrial Military Comm’l Comm’l Standard Standard Standard MIL-STD-883C Standard MIL-STD-883C Standard Standard Standard Standard Standard MIL-STD-883C MIL-STD-883C Standard MIL-STD-883C Standard Standard Standard Standard Standard MIL-STD-883C Standard Standard NOTES: 8. The actual part marking will not include the initials "WS." PROGRAMMING/ALGORITHMS/ERASURE/PROGRAMMERS REFER TO PAGE 5-1 The WS57C51C is programmed using Algorithm D shown on page 5-9. Return to Main Menu 2-53
WS57C51C-45D 价格&库存

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