X00602MA

® X00602MA 0.8A SCRs SENSITIVE MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGT Value 0.8 600 200 Unit A V µA G A K DESCRIPTION Thanks to highly sensitive triggering levels, the X006 SCR series is suitable for all applications where the available gate current is limited, such as ground fault circuit interrupters, overvoltage crowbar protection in low power supplies, capacitive ignition circuits, ... KG A TO-92 ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) IT(AV) ITSM Parameter RMS on-state current (180° conduction angle) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range tp = 8.3 ms Tj = 25°C tp = 10 ms tp = 10ms F = 60 Hz tp = 20 µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 125°C 9 0.25 50 1 0.1 - 40 to + 125 - 40 to + 125 A2S A/µs A W °C Tl = 85°C Tl = 85°C Value 0.8 0.5 10 A Unit A A I ²t dI/dt IGM PG(AV) Tstg Tj January 2002 - Ed: 5 1/5 X00602MA ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol IGT VGT VGD VRG IH IL dV/dt VTM Vt0 Rd IDRM IRRM VD = VDRM IRG = 10 µA IT = 50 mA IG = 1 mA ITM = 1 A RGK = 1 kΩ RGK = 1 kΩ RGK = 1 kΩ Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C tp = 380 µs RL = 3.3 kΩ RGK = 1 kΩ Tj = 125°C Test Conditions MIN. VD = 12 V RL = 140 Ω MAX. MAX. MIN. MIN. MAX. MAX. MIN. MAX. MAX. MAX. MAX. X00602MA 15 200 0.8 0.2 5 5 6 25 1.35 0.85 245 1 100 Unit µA µA V V V mA mA V/µs V V mΩ µA VD = 67 % VDRM Threshold voltage Dynamic resistance VDRM = VRRM RGK = 1 kΩ THERMAL RESISTANCES Symbol Rth(j-l) Rth(j-a) Junction to lead (DC) Junction to ambient (DC) Parameter Value 70 150 Unit °C/W °C/W PRODUCT SELECTOR Part Number X00602MA Voltage 600 V Sensitivity 200 µA Package TO-92 ORDERING INFORMATION X SENSITIVE SCR SERIES CURRENT: 0.8A 006 02 M A Blank 1AA2 PACKING MODE: 1AA2: Bulk 2AL2: Ammopack 5AL2: Tape & reel VOLTAGE: M: 600V SENSITIVITY: 02: 200µA PACKAGE: A: TO-92 OTHER INFORMATION Part Number X00602MA 1AA2 X00602MA 2AL2 X00602MA 5AL2 Marking X0602MA X0602MA X0602MA Weight 0.2 g 0.2 g 0.2 g Base Quantity 2500 2000 2000 Packing mode Bulk Ammopack Tape & reel 2/5 X00602MA Fig. 1: Maximum average power dissipation versus average on-state current. P(W) 0.65 0.60 α = 180° 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0.0 0.1 Fig. 2-1: Average and D.C. on-state current versus lead temperature. IT(av)(A) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 D.C. α = 180° 360° IT(av)(A) 0.2 0.3 0.4 α Tlead(°C) 0 25 50 75 100 125 0.5 0.6 Fig. 2-2: Average and D.C. on-state current versus ambient temperature (device mounted on FR4 with recommended pad layout). IT(av)(A) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Fig. 3: Relative variation of thermal impedance junction to ambient versus pulse duration. K = [Zth(j-a)/Rth(j-a)] 1.00 D.C. α = 180° 0.10 Tamb(°C) 0 25 50 75 100 125 0.01 1E-2 1E-1 tp(s) 1E+0 1E+1 1E+2 5E+2 Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature. IGT, IH, IL[Tj] / IGT, IH, IL[Tj = 25 °C] 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -40 -20 0 20 Tj(°C) 40 60 80 100 120 140 IGT IH & IL Fig. 5: R elative variation of holding current versus gate-cathode resistance (typical values). IH[Rgk]/IH[Rgk=1kΩ] 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 1E-2 1E-1 Rgk(kΩ) 1E+0 1E+1 1E+2 3/5 X00602MA Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values). dV/dt[Rgk]/dV/dt[Rgk=1kΩ] 1E+2 Fig. 7: Relative variation of dV/dt immunity versus gate-cathode capacitance (typical values). dV/dt[Cgk]/dV/dt[Rgk=1kΩ] 20 10 1E+1 1E+0 5 1E-1 2 Rgk(kΩ) 1E-2 1E-2 1E-1 1E+0 1E+1 1 1 2 Cgk(nF) 5 10 Fig. 8: Surge peak on-state current versus number of cycles. Fig. 9: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t. ITSM(A),I 2t(A2s) 100.0 ITSM Tj initial = 25 °C 10 9 8 7 6 5 4 3 2 1 0 ITSM(A) tp=10ms Onecycle Nonrepetitive Tjinitial=25°C Repetitive T amb=25°C 10.0 1.0 Number of cycles tp(ms) 0.1 0.01 0.10 1.00 I2t 1 10 100 1000 10.00 Fig. 10: On-state characteristics (maximum values). ITM(A) 1E+1 Tj max.: Vto = 0.85V Rd = 245mΩ 1E+0 Tj = Tjmax. Tj = 25°C 1E-1 VTM(V) 1E-2 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4/5 X00602MA PACKAGE MECHANICAL DATA TO-92 (Plastic) DIMENSIONS A a B C REF. Millimeters Min. Typ. 1.35 4.70 2.54 4.40 12.70 3.70 0.50 0.173 0.500 Max. Min. Inches Typ. 0.053 0.185 0.100 Max. F D E A B C D E F a 0.146 0.019 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © The ST logo is a registered trademark of STMicroelectronics © 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States http://www.st.com 5/5