BTB16

® B 16A Triacs logic level 1 MAIN FEATURES: Symbol IT(RMS) VDRM/VRRM IGT (Q1) Value 16 600, 700 and 800 10 to 50 Unit A V BTA/BTB16 series A2 G A1 A2 mA A1 A2 G DESCRIPTION Available either in through-hole or surface-mount packages, the BTA/BTB16 and T16 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers, ... The snubberless versions (BTA/BTB...W and T16 series) are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500V RMS) complying with UL standards (File ref.: E81734). ABSOLUTE MAXIMUM RATINGS Symbol IT(RMS) RMS on-state current (full sine wave) Parameter D2PAK (T16-G) A2 A1 A2 G A1 A2 G TO-220AB (BTB16) TO-220AB Insulated (BTA16) Value D2²PAK TO-220AB Tc = 100°C Tc = 85°C t = 16.7 ms t = 20 ms 168 160 144 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 125°C 50 VDRM/VRRM + 100 Unit A 16 A A²s A/µs V A W °C TO-220AB Ins. ITSM I ²t dI/dt Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 60 Hz F = 50 Hz tp = 10 ms F = 120 Hz tp = 10 ms tp = 20 µs VDSM/VRSM Non repetitive surge peak off-state voltage IGM PG(AV) Tstg Tj O Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range 4 1 - 40 to + 150 - 40 to + 125 1/4 16A Triacs logic level ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) ■ BTA/BTB16 series SNUBBERLESS™ and LOGIC LEVEL (3 Quadrants) Symbol Test Conditions Quadrant T16 T1635 IGT (1) VGT VGD IH (2) IL dV/dt (2) VD = 12 V VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM gate open Tj = 125°C Tj = 125°C Tj = 125°C Tj = 125°C MIN. (dV/dt)c = 10 V/µs Without snubber I - III II MIN. (dI/dt)c (2) (dV/dt)c = 0.1 V/µs RL = 33 Ω RL = 3.3 kΩ Tj = 125°C I - II - III I - II - III I - II - III MAX. MAX. MIN. MAX. MAX. 35 50 60 500 8.5 15 25 30 40 8.5 3.0 35 SW 10 1.3 0.2 35 50 60 500 8.5 50 70 80 1000 14 V/µs A/ms BTA/BTB16 CW 35 BW 50 mA V V mA mA Unit ■ STANDARD (4 Quadrants) Symbol Test Conditions Quadrant BTA/BTB16 C IGT (1) VD = 12 V VGT VGD IH (2) IL dV/dt (2) VD = VDRM IT = 500 mA IG = 1.2 IGT VD = 67 % VDRM gate open Tj = 125°C Tj = 125°C I - III - IV II MIN. MIN. RL = 3.3 kΩ Tj = 125°C RL = 33 Ω I - II - III IV ALL ALL MAX. MAX. MIN. MAX. MAX. 25 40 80 200 5 25 50 1.3 0.2 50 60 120 400 10 V/µs V/µs B 50 100 mA V V mA mA Unit (dV/dt)c (2) (dI/dt)c = 7 A/ms STATIC CHARACTERISTICS Symbol VTM (2) Vto (2) Rd (2) IDRM IRRM Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1 Test Conditions ITM = 22.5 A tp = 380 µs Tj = 25°C Tj = 125°C Tj = 125°C Tj = 25°C Tj = 125°C MAX. MAX. MAX. MAX. Value 1.55 0.85 25 5 2 Unit V V mΩ µA mA Threshold voltage Dynamic resistance VDRM = VRRM 2/4 16A Triacs logic level OTHER INFORMATION Part Number BTA/BTB16-xxxyz BTA/BTB16-xxxyzRG T1635-xxxG T1635-xxxG-TR Marking BTA/BTB16xxxyz BTA/BTB16-xxxyz T1635xxxG T1635xxxG Weight 2.3 g 2.3 g 1.5 g 1.5 g Base quantity 250 50 50 1000 Packing mode Bulk Tube Tube Tape & reel BTA/BTB16 series Note: xxx = voltage, y = sensitivity, z = type Fig. 1: Maximum power dissipation versus RMS on-state current (full cycle). P (W) Fig. 2-1: RMS on-state current versus case temperature (full cycle). IT(RMS) (A) 18 16 14 12 10 8 6 4 2 0 BTB/T16 20 18 16 14 12 10 8 6 4 2 0 BTA IT(RMS) (A) 0 2 4 6 8 10 12 14 16 Tc(°C) 0 25 50 75 100 125 Fig. 2-2: D²PAK RMS on-state current versus ambient temperature (printed circuit board FR4, copper thickness: 35 µm), full cycle. IT(RMS) (A) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 25 Tamb(°C) 50 75 100 125 D PAK 2 (S=1cm ) 2 Fig. 3: Relative variation of thermal impedance versus pulse duration. K=[Zth/Rth] 1E+0 Zth(j-c) 1E-1 Zth(j-a) tp (s) 1E-2 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 3/4 16A Triacs logic level Fig. 4: values) ITM (A) 200 Tj max BTA/BTB16 series On-state characteristics (maximum Fig. 5: Surge peak on-state current versus number of cycles. ITSM (A) 180 160 140 120 100 80 60 40 20 0 100 t=20ms Non repetitive Tj initial=25°C One cycle 10 Tj=25°C Repetitive Tc=85°C VTM (V) 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Tj max: Vto = 0.85 V Rd = 25 mΩ Number of cycles 1 10 100 1000 4.0 4.5 5.0 Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10ms, and corresponding value of I²t. ITSM (A), I²t (A²s) 3000 Tj initial=25°C dI/dt limitation: 50A/µs Fig. 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values). IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C] 2.5 2.0 IGT 1000 1.5 IH & IL ITSM 1.0 0.5 I²t tp (ms) 100 0.01 0.10 1.00 10.00 Tj(°C) 0.0 -40 -20 0 20 40 60 80 100 120 140 Fig. 8: Relative variation of critical rate of decrease of main current versus (dV/dt)c (typical values). (dI/dt)c [(dV/dt)c] / Specified (dI/dt)c 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.1 1.0 (dV/dt)c (V/µs) 10.0 100.0 B C SW Fig. 9: Relative variation of critical rate of decrease of main current versus junction temperature. (dI/dt)c [Tj] / (dI/dt)c [Tj specified] 6 5 4 BW/CW/T1635 3 2 1 0 0 25 50 Tj (°C) 75 100 125 4/4