IRFZ44V

IRFZ44V N-CHANNEL Power MOSFET APPLICATION DC motor control UPS Class D Amplifier VDSS 60V RDS(ON) 16.5m ID 60A FEATURES Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves PIN CONFIGURATION TO-220 SYMBOL D Front View GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Source Voltage (Note 1) Drain to Current Continuous Tc = 25 , VGS@10V Continuous Tc = 100 , VGS@10V Pulsed Tc = 25 , VGS@10V (Note 2) Gate-to-Source Voltage Total Power Dissipation Derating Factor above 25 Peak Diode Recovery dv/dt (Note 3) Operating Junction and Storage Temperature Range Single Pulse Avalanche Energy L=144µH,ID=40 Amps Maximum Lead Temperature for Soldering Purposes Maximum Package Body for 10 seconds Pulsed Avalanche Rating dv/dt TJ, TSTG EAS TL TPKG IAS Continue Symbol VDSS ID ID IDM VGS PD Value 60 60 43 241 ±20 150 1.0 4.5 -55 to 175 500 300 260 60 A mJ V W W/ V/ns Unit V A THERMAL RESISTANCE Symbol R R JC Parameter Junction-to-case Junction-to-ambient Min Typ Max 1.0 62 Units /W /W JA Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +175 1 cubic foot chamber, free air Page 1 IRFZ44V N-CHANNEL Power MOSFET ORDERING INFORMATION Part Number Package ....................IRFZ44V................................................TO-220 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25 . cIRFZ44V Characteristic OFF Characteristics Drain-to-Source Breakdown Voltage (VGS = 0 V, ID = 250 µA) Breakdown Voltage Temperature Coefficient (Reference to 25 VDSS/ TJ IDSS ) ) IGSS IGSS ON Characteristics Gate Threshold Voltage (VDS = VGS, ID = 250 µA) Static Drain-to-Source On-Resistance (VGS = 10 V, ID = 60A) Forward Transconductance (VDS = 15 V, ID = 60A) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (VGS = 10 V) Gate-to-Source Charge Gate-to-Drain (“Miller”) Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge (IS = 60 A, VGS = 0 V) (IF = 60A, VGS = 0 V, di/dt = 100A/µs) Integral pn-diode in MOSFET ISM VSD trr Qrr 55 110 241 1.5 A V ns nC (Note 4) Dynamic Characteristics (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDS = 30 V, ID = 60 A, VGS = 10 V) (Note 5) Ciss Coss Crss Qg Qgs Qgd Resistive Switching Characteristics (VDD = 30 V, ID = 60 A, VGS = 10 V, RG = 9.1 ) (Note 5) td(on) trise td(off) tfall IS 12.1 64 69 39 60 ns ns ns ns A 1430 420 88 37.7 8.4 9.8 pF pF pF nC nC nC gFS 36 (Note 4) RDS(on) 16.5 S m VGS(th) 1.0 2.0 3.0 V 25 250 100 -100 nA nA 0.069 mV/ µA VDSS 60 V Symbol Min Typ Max Units , ID = 250 µA) Drain-to-Source Leakage Current (VDS = 60 V, VGS = 0 V, TJ = 25 (VDS = 48 V, VGS = 0 V, TJ = 150 Gate-to-Source Forward Leakage (VGS = 20 V) Gate-to-Source Reverse Leakage (VGS = -20 V) Source-Drain Diode Characteristics Page 2 IRFZ44V N-CHANNEL Power MOSFET Duty Cycle Figure 1. Maximum Effective Thermal Impedance, Junction-to-Case 1.000 50% 20% 10% Z JC , Thermal Impedance 0.100 5% 2% 1% PDM t1 t2 NOTES: DUTY FACTOR: D=t1/t2 PEAK TJ=PDM x Z JC x R JC+TC 0.010 single pulse 0.001 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01 tp, Rectangular Pulse Duration (s) Figure 2. Maximum Power Dissipation vs Case Temperature Figure 3. Maximum Continuous Drain Current vs Case Temperature 70 PD, Power Dissipation (W) 140 ID, Drain Current (A) 120 100 80 60 40 20 0 25 50 75 100 125 150 175 60 50 40 30 20 10 0 25 50 75 100 125 150 175 TC, Case Temperature (oC) TC, Case Temperature (oC) Figure 4. Typical Output Characteristics 220 200 180 PULSE DURATION = 250 µS DUTY CYCLE = 0.5% MAX TC = 2 5 o C Figure 5. Typical Drain-to-Source ON Resistance vs Gate Voltage and Drain Current 50 45 VGS = 15V ID, Drain Current (A) 160 140 120 100 80 60 40 20 0 0 5 VGS = 10V VGS = 8V RDS(ON), Drain-to-Source 40 ON Resistance (m ID = 14A ID = 28A ID = 55 A 35 30 25 20 15 VGS = 6V VGS = 5V VGS = 4.5V VGS = 4V VGS = 3.5V VGS = 3V PULSE DURATION = 250 µS DUTY CYCLE = 0.5% MAX o TC = 2 5 C 10 3 4 5 6 7 8 9 10 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Page 3 IRFZ44V N-CHANNEL Power MOSFET Figure 6. Maximum Peak Current Capability 10000 TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25 oC DERATE PEAK CURRENT AS FOLLOWS: I = I 25 150 – T C ---------------------125 IDM, Peak Current (A) 1000 100 10 VGS = 10V 1 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1E+0 10E+0 tp, Pulse Width (s) Figure 7. Typical Transfer Characteristics Figure 8. Unclamped Inductive Switching Capability 1000 ID, Drain-to-Source Current (A) 40 35 30 25 20 15 10 5 0 IAS, Avalanche Current (A) PULSE DURATION = 250 µs DUTY CYCLE = 0.5% MAX VDS = 10 V If R 0: tAV= (L/R) ln[(IAS×R)/(1.3BVDSS-VDD)+1] If R= 0: tAV= (L×IAS)/(1.3BVDSS-VDD) R equals total Series resistance of Drain circuit 100 STARTING TJ = 25 oC +175 oC +25oC -55oC 10 STARTING TJ = 150 oC 1 1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1.5 2.0 2.5 3.0 3.5 4.0 VGS, Gate-to-Source Voltage (V) tAV, Time in Avalanche (s) Figure 9. Typical Drain-to-Source ON Resistance vs Drain Current Figure 10. Typical Drain-to-Source ON Resistance vs Junction Temperature 2.5 RDS(ON), Drain-to-Source ON Resistance (m ) 50 RDS(ON), Drain-to-Source Resistance (Normalized) PULSE DURATION = 10 µs DUTY CYCLE = 0.5% MAX TC=25°C 40 2.0 30 1.5 20 VGS=10V 1.0. PULSE DURATION = 250 µs DUTY CYCLE = 0.5% MAX VGS = 10V, ID = 15A 10 0 50 100 150 200 250 0.5 -75 -50 -25 0 25 50 75 100 125 150 175 ID, Drain Current (A) TJ, Junction Temperature (oC) Page 4 IRFZ44V N-CHANNEL Power MOSFET Figure 11. Typical Breakdown Voltage vs Junction Temperature BVDSS, Drain-to-Source Breakdown Voltage (Normalized) 1.20 Figure 12. Typical Threshold Voltage vs Junction Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.15 1.1 1.0 0.9 0.8 0.7 0.6 0.5 1.10 1.05 1.00 0.95 0.90 -75 -50 -25 0.0 25 50 75 VGS = 0 V ID = 250 µA 100 125 150 175 VGS = VDS ID = 250 µA -75 -50 -25 0.0 25 50 75 100 125 150 175 TJ, Junction Temperature (oC) TJ, Junction Temperature (oC) Figure 13. Maximum Forward Bias Safe Operating Area 1000 OPERATION IN THIS AREA MAY BE LIMITED BY RDS(ON) Figure 14. Typical Capacitance vs Drain-to-Source Voltage 3000 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd Coss Cds + Cgd Crss = Cgd ID, Drain Current (A) 10µs C, Capacitance (pF) 2500 Ciss 100 100µ 2000 1500 1000 500 Coss 10 TJ = MAX RATED, TC = 25 oC Single Pulse 1.0m 10ms 1 DC Crss 0 10 100 0.01 0.1 1 10 100 1 VDS, Drain-to-Source Voltage (V) VDS, Drain Voltage (V) Figure 15. Typical Gate Charge vs Gate-to-Source Voltage VGS, Gate-to-Source Voltage (V) ISD, Reverse Drain Current (A) 12 10 VDS=45V Figure 16. Typical Body Diode Transfer Characteristics 180 160 140 120 150 oC 25 oC -55 oC 8 6 4 2 0 0 5 VDS=30V VDS=15V 100 80 60 40 20 0 VGS = 0 V ID = 59A 10 15 20 25 30 35 40 0.3 0.5 0.7 0.9 1.1 1.3 QG , Total Gate Charge (nC) VSD, Source-to-Drain Voltage (V) Page 5