2N7000_07

2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features ► ► ► ► ► ► ► ► Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-Channel devices General Description The Supertex 2N7000 is an enhancement-mode (normallyoff) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ► ► ► ► ► ► Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Device 2N7000 2N7000-G Package BVDSS/BVDGS (V) RDS(ON) (max) (Ω) ID(ON) (min) (mA) TO-92 60 5.0 75 -G indicates package is RoHS compliant (‘Green’) Absolute Maximum Ratings Parameter Drain to source voltage Drain to gate voltage Gate to source voltage Operating and storage temperature Soldering temperature 1 Pin Configuration Value BVDSS BVDGS ±30V -55°C to +150°C +300°C S GD Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Notes: 1. Distance of 1.6mm from case for 10 seconds. TO-92 (front view) 2N7000 Electrical Characteristics (T = 25°C unless otherwise specified) A Symbol BVDSS VGS(th) IGSS IDSS ID(ON) RDS(ON) GFS CISS COSS CRSS t(ON) t(OFF) VSD Parameter Drain-to-source breakdown voltage Gate threshold voltage Gate body leakage current Zero gate voltage drain current ON-state drain current Static drain-to-source ON-state resistance Forward transconductance Input capacitance Common source output capacitance Reverse transfer capacitance Turn-ON time Turn-OFF time Diode forward voltage drop Min 60 0.8 75 100 - Typ 0.85 Max 3.0 10 1.0 1.0 5.3 5.0 60 25 5 10 10 - Units V V nA µA mA mA Ω mmho Conditions VGS = 0V, ID = 10µA VGS = VDS, ID = 1.0mA VGS = ±15V, VDS = 0V VGS = 0V, VDS = 48V VGS = 0V, VDS = 48V, TA = 125OC VGS = 4.5V, VDS = 10V VGS = 4.5V, ID = 75mA VGS = 10V, ID = 500mA VDS = 10V, ID = 200mA VGS = 0V, VDS = 25V, f = 1.0MHz VDD = 15V, ID = 500mA, RGEN = 25Ω VGS = 0V, ISD = 200mA pF ns V Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Thermal Characteristics Device 2N7000 Package TO-92 ID (continuous)* (mA) ID (pulsed) (mA) Power Dissipation @TC = 25OC (W) ( C/W) O θJC ( C/W) O θJA IDR* (mA) IDRM (mA) 200 500 1.0 125 170 200 500 Notes: * ID (continuous) is limited by max rated TJ. Switching Waveforms and Test Circuit 10V VDD RL OUTPUT 90% INPUT 0V 10% t(ON) PULSE GENERATOR t(OFF) tr td(OFF) tF RGEN td(ON) VDD 10% 10% INPUT D.U.T. OUTPUT 0V 90% 90% 2 2N7000 Typical Performance Curves Output Characteristics 2.5 VGS =10V 8V 2.5 Saturation Characteristics VGS = 1 0V 2.0 8V 2.0 ID (amperes) ID (amperes) 1.5 6V 1.0 1.5 6V 1.0 0.5 4V 0.5 4V 0 0 10 20 30 40 50 0 0 2 4 6 8 10 VDS (volts) Transconductance vs. Drain Current 1.0 2.0 VDS (volts) Power Dissipation vs. Case Temperature 0.8 VDS = 25V GFS (siemens) PD (watts) 0.6 TO-92 1.0 TA = -55OC 0.4 25OC 125OC 0.2 0 0 0.2 0.4 0.6 0.8 1.0 0 0 25 50 75 100 125 150 ID (amperes) Maximum Rated Safe Operating Area 1.0 1.0 TO-92 (pulsed) TO-92 (DC) TC (OC) Thermal Response Characteristics Thermal Resistance (normalized) 0.8 ID (amperes) 0.1 0.6 0.4 0.01 0.2 TO-92 PD = 1 W O TC = 2 5 C 0.01 0.1 1 10 0.001 TC = 25OC 0.1 1.0 10 100 0 0.001 VDS (volts) tp (seconds) 3 2N7000 Typical Performance Curves (cont.) BVDSS Variation with Temperature 5.0 1.1 4.0 On-Resistance vs. Drain Current VGS = 4.5V BVDSS (normalized) RDS(ON) (ohms) 3.0 VGS = 10V 1.0 2.0 1.0 0.9 0 -50 0 50 100 150 0 0.5 1.0 1.5 2.0 2.5 Tj ( OC) Transfer Characteristics 2.5 1.6 ID (amperes) V(th) and RDS Variation with Temperature 1.9 VDS = 25V 2.0 25 C O VGS(th) (normalized) 1.5 1.2 1.3 125 C 1.0 O V(th) @ 1mA 1.0 1.0 0.5 0.8 0.7 0 0 2 4 6 8 10 0.6 -50 0 50 100 0.4 150 VGS (volts) Capacitance vs. Drain-to-Source Voltage 100 10 Tj(O C) Gate Drive Dynamic Characteristics f = 1MHz 8 75 VDS = 10V 40V C (picofarads) VGS (volts) 6 50 80 pF 4 CISS 25 COSS CRSS 2 40 pF 0 40 0 0.2 0.4 0.6 0.8 1.0 0 0 10 20 30 VDS (volts) QG (nanocoulombs) 4 RDS(ON) (normalized) TA = -55 C O 1.4 1.6 RDS @ 10V, 1.0A ID (amperes) 2N7000 TO-92 Package Outline 0.135 MIN 0.125 - 0.165 0.080 - 0.105 1 2 3 Bottom View 0.175 - 0.205 0.170 - 0.210 123 Seating Plane 0.500 MIN 0.014 - 0.022 0.014 - 0.022 0.045 - 0.055 0.095 - 0.105 Front View Side View Notes: All dimensions are in millimeters; all angles in degrees. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-2N7000 A042507 5