TP2540N3

TP2535 TP2540 Low Threshold P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS -350V -400V RDS(ON) (max) 25Ω 25Ω VGS(th) (max) -2.4V -2.4V ID(ON) (min) -0.4A -0.4A Order Number / Package TO-92 TP2535N3 TP2540N3 TO-243AA* — TP2540N8 Die† — TP2540ND * Same as SOT-89. † Product supplied on 2000 piece carrier tape reels. MIL visual screening available. Product marking for TO-243AA Features ❏ Low threshold — -2.4V max. ❏ High input impedance ❏ Low input capacitance — 125pF max. ❏ Fast switching speeds ❏ Low on resistance ❏ Free from secondary breakdown ❏ Low input and output leakage ❏ Complementary N- and P-channel devices TP5D❋ Where ❋ = 2-week alpha date code Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ❏ Logic level interfaces – ideal for TTL and CMOS ❏ Solid state relays ❏ Battery operated systems ❏ Photo voltaic drives ❏ Analog switches ❏ General purpose line drivers ❏ Telecom switches Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* BVDSS BVDGS ± 20V -55°C to +150°C 300°C Note: See Package Outline section for dimensions. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. D G D S SGD TO-243AA (SOT-89) TO-92 * Distance of 1.6 mm from case for 10 seconds. 1 TP2535/TP2540 Thermal Characteristics Package TO-92 TO-243AA † ID (continuous)* -86mA -125mA ID (pulsed) -0.6A -1.2A Power Dissipation @ TA = 25°C 0.74W 1.6W† θjc θja IDR* -86mA -125mA IDRM -0.6A -1.2A °C/W 125 15 °C/W 170 78† * ID (continuous) is limited by max rated Tj. Mounted on FR5 Board, 25mm x 25mm x 1.57mm. Signficant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS VGS(th) ∆VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current TP2540 TP2535 Min -400 -350 -1.0 -2.4 4.8 -100 -10 -1.0 ID(ON) RDS(ON) ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 300 100 175 60 20 10 125 70 25 10 10 20 13 -1.8 V ns VGS = 0V, ISD = -100mA VGS = 0V, ISD = -100mA ns VDD = -25V ID = -0.4A RGEN = 25Ω pF -0.2 -0.4 -0.3 -1.1 20 19 30 25 0.75 %/°C m Typ Max Unit V V mV/°C nA µA mA A Ω Conditions VGS = 0V, ID = -2mA VGS = VDS, ID = -1mA VGS = VDS, ID = -1mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = -4.5V, VDS = -25V VGS = -10V, VDS = -25V VGS = -4.5V, ID = -100mA VGS = -10V, ID = -100mA VGS = -10V, ID = -100mA VDS = -25V, ID = -100mA VGS = 0V, VDS = -25V f = 1 MHz Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V 10% INPUT -10V PULSE GENERATOR 90% t(ON) Rgen t(OFF) tr td(OFF) tF INPUT td(ON) 0V 90% OUTPUT VDD 90% 10% 10% 2 Ω D.U.T. OUTPUT RL VDD TP2535/TP2540 Typical Performance Curves -2.0 -1.6 Output Characteristics -1.0 -0.8 Saturation Characteristics VGS = -10V - 8V - 6V ID (amperes) ID (amperes) -1.2 -0.8 -0.4 0 VGS = -10V -8V -6V -4V 0 -10 -20 -30 VDS (volts) -40 -50 -0.6 -0.4 -0.2 0 0 -2 -4 -6 -8 - 4V VDS (volts) -10 0.5 0.4 Transconductance vs. Drain Current VDS = -25V 2.0 Power Dissipation vs. Ambient Temperature TO-243AA GFS (siemens) PD (watts) 0.3 0.2 0.1 0 0 -0.4 -0.8 -1.2 ID (amperes) TA = -55°C 25°C 125°C 1.0 TO-92 -1.6 -2.0 0 0 25 50 TA (°C) 75 100 125 150 -10 Maximum Rated Safe Operating Area Thermal Resistance (normalized) TA = 25°C TO-243AA(pulsed) TO-92 (pulsed) TO-243AA (DC) TO-92 (DC) 1.0 0.8 0.6 0.4 0.2 0 0.001 Thermal Response Characteristics ID (amperes) -1.0 TO-243AA TA = 25 °C PD = 1.6W -0.1 -0.01 TO-92 P D = 1W T C = 25 ° C 0.01 -1 -10 VDS (volts) -100 -1000 tp (seconds) 0.1 1 10 3 TP2535/TP2540 Typical Performance Curves BVDSS Variation with Temperature 1.1 100 On-Resistance vs. Drain Current 80 V GS = -4.5V BVDSS (normalized) RDS(ON) (ohms) 60 1.0 40 VGS = -10V 20 0.9 -50 0 50 100 150 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 Tj (° C) Transfer Characteristics -2 1.2 ID (amperes) V(th) and RDS Variation with Temperature 2.5 VDS = - 25V -1.6 TA = -55°C RDS(ON) @ -10V, -0.1A 2.0 1.1 1.5 1.0 1.0 0.9 -1.2 25°C -0.8 -0.4 V(th) @ -1mA 125°C 0.8 0.5 0 0 -2 -4 -6 -8 -10 -50 0 50 100 150 0 VGS (volts) Capacitance vs. Drain-to-Source Voltage 200 -10 Tj (° C) Gate Drive Dynamic Characteristics f = 1MHz -8 150 VDS = - 10V C (picofarads) VGS (volts) -6 100 VDS = - 40V -4 CISS 50 -2 190 pF 60pF CRSS 0 0 -10 -20 -30 -40 COSS 0 0 0.4 0.8 1.2 1.6 2.0 VDS (volts) QG (nanocoulombs) 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) VGS(th) (normalized) ID (amperes)