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VN2460NW

VN2460NW

  • 厂商:

    SUTEX

  • 封装:

  • 描述:

    VN2460NW - N-Channel Enhancement-Mode Vertical DMOS FETs - Supertex, Inc

  • 数据手册
  • 价格&库存
VN2460NW 数据手册
VN2460 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 600V RDS(ON) (max) 20Ω ID(ON) (min) 0.25A Order Number / Package TO-92 VN2460N3 TO-243AA* VN2460N8 Die** VN2460NW * Same as SOT-89 Product Supplied on 2000 piece carrier tape reels. ** Die in wafer form. Features ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain Product marking for TO-243AA: VN4F❋ Where ❋ = 2-week alpha date code Advanced DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications ❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Package Options Absolute Maximum Ratings D Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. BVDSS BVDGS ± 20V -55°C to +150°C 300°C G D S TO-243AA (SOT-89) SGD TO-92 Note: See Package Outline section for dimensions. 11/12/01 Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. 1 VN2460 Thermal Characteristics Package TO-243AA TO-92 † ID (continuous)* 0.2A 0.16A ID (pulsed) 0.6A 0.5A Power Dissipation @ TC = 25°C 1.6W† 1W θjc θja IDR* 0.2A 0.16A IDRM 0.6A 0.5A °C/W 15 125 °C/W 78 † 170 * ID (continuous) is limited by max rated Tj. Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol BVDSS VGS(th) ∆VGS(th) IGSS IDSS Parameter Drain-to-Source Breakdown Voltage Gate Threshold Voltage Change in VGS(th) with Temperature Gate Body Leakage Zero Gate Voltage Drain Current Min 600 1.5 -5.5 100 10 1 Typ Max Unit V V mV/°C nA µA mA Conditions VGS = 0V, ID = 2.0mA VGS = VDS , ID = 2.0mA VGS = VDS , ID = 2.0mA VGS = ±20V, VDS = 0V VGS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C VGS = 10V, VDS = 25V VGS = 4.5V, ID = 100mA VGS = 10V, ID = 100mA VGS = 10V, ID = 100mA VDS = 25V, ID = 100mA VGS = 0V, VDS = 25V f = 1.0 MHz ID(ON) RDS(ON) ∆RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD ON-State Drain Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop 0.25 25 20 1.7 50 150 50 25 10 10 25 20 1.5 A Ω %/°C m pF ns V Notes: 1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V 90% INPUT 0V PULSE GENERATOR Rgen 10% t(ON) t(OFF) tr td(OFF) tF td(ON) VDD 10% 10% INPUT OUTPUT 0V 90% 90% 2 Ω VDD = 25V, ID = 250mA, RGEN = 25Ω VGS = 0V, ISD = 400mA VDD RL OUTPUT D.U.T. VN2460 Typical Performance Curves Output Characteristics 1.2 0.5 VGS = 10V 1.0 0.4 8V 6V 0.6 8V 6V 5V 0.3 VGS = 10V 0.8 Saturation Characteristics ID (Amperes) ID (Amperes) 0.2 4V 0.1 0.4 5V 0.2 4V 3V 50 0 0 2 4 6 8 10 3V 0 0 10 20 30 40 VDS (Volts) Transconductance vs. Drain Current 0.5 VDS = 25V 0.4 VDS (Volts) Power Dissipation vs. Case Temperature 2.0 1.6 GFS (siemens) PD (Watts) TA = -55°C 0.3 TA = 25°C 0.2 SOT-89 1.2 0.8 TA = 125°C TO-92 0.1 0.4 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0 0 25 50 75 100 125 150 ID (Amperes) Maximum Rated Safe Operating Area 1.0 SOT-89 (pulsed) 1.0 TC (°C) Thermal Response Characteristics SOT-89 P D = 1.6W T C = 2 5 °C Thermal Resistance (normalized) TO-92 (pulsed) 0.8 ID (amperes) 0.1 TO-92 (DC) SOT-89 (DC) 0.6 0.4 0.01 0.2 T C = 25 ° C 0.001 1 10 100 1000 0 0.001 0.01 0.1 TO-92 PD = 1W TC = 25°C 1.0 10 VDS (Volts) tp (seconds) 3 VN2460 Typical Performance Curves BVDSS Variation with Temperature 1.2 50 VGS = 4.5V On Resistance vs. Drain Current BVDSS (Normalized) 40 RDS(ON) (ohms) 1.1 30 VGS = 10V 20 1.0 0.9 10 0.8 -50 0 50 100 150 0 0 0.2 0.4 0.6 0.8 1.0 TJ (°C) Transfer Characteristics 0.5 VDS = 25V TA = -55°C TA = 25°C 1.6 ID (Amperes) VGS(TH) and RDS(ON) w/ Temperature 3.0 VGS(th) (normalized) 0.4 1.2 VGS(th) @ 2mA 2.0 0.3 TA = 125°C 1.0 1.5 0.2 0.8 1.0 0.1 0.6 0.4 -50 RDS(on) @ 10V, 0.1A 0.5 0 0 2 4 6 8 10 -25 0 25 50 75 100 125 0.0 150 VGS (Volts) Capacitance vs. Drain Source Voltage 300 f = 1MHz 8 225 10 ID = 0.5A TJ (°C) Gate Drive Dynamic Characteristics VDS=10V C (picofarads) VGS (volts) 6 VDS=40V 150 CISS 4 75 2 COSS CRSS 0 0 10 20 30 40 0 0 1.0 2.0 3.0 4.0 5.0 VDS (volts) QG (nanocoulombs) 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com RDS(ON) (normalized) 1.4 2.5 ID (Amperes)
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