SPC6604ST6RG

SPC6604 N & P Pair Enhancement Mode MOSFET DESCRIPTION The SPC6604 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. APPLICATIONS Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter FEATURES N-Channel 20V/4.0A,RDS(ON)=50mΩ@VGS=4.5V 20V/3.4A,RDS(ON)=60mΩ@VGS=2.5V 20V/2.8A,RDS(ON)=75mΩ@VGS=1.8V 20V/1.0A,RDS(ON)=120mΩ@VGS=1.25V P-Channel -20V/-3.4A,RDS(ON)= 85mΩ@VGS=-4.5V -20V/-2.4A,RDS(ON)=110mΩ@VGS=-2.5V -20V/-1.7A,RDS(ON)=130mΩ@VGS=-1.8V -20V/-1.0A,RDS(ON)=200mΩ@VGS=-1.25V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability TSOP– 6P package design PIN CONFIGURATION( TSOP– 6P ) PART MARKING 2006/03/20 Ver.3 Page 1 SPC6604 N & P Pair Enhancement Mode MOSFET PIN DESCRIPTION Pin 1 2 3 4 5 6 Symbol G1 S2 G2 D2 S1 D1 Description Gate 1 Source 2 Gate 2 Drain 2 Source 1 Drain1 ORDERING INFORMATION Part Number SPC6604ST6RG ※ Week Code : A ~ Z( 1 ~ 26 ) ; a ~ z( 27 ~ 52 ) ※ SPC6604ST6RG : Tape Reel ; Pb – Free Package TSOP- 6P Part Marking 04YW ABSOULTE MAXIMUM RATINGS (TA=25℃ Unless otherwise noted) Typical Parameter Drain-Source Voltage Gate –Source Voltage Continuous Drain Current(TJ=150℃) Pulsed Drain Current Continuous Source Current(Diode Conduction) Power Dissipation Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient T ≤ 10sec Steady State TA=25℃ TA=70℃ TA=25℃ TA=70℃ Symbol N-Channel VDSS VGSS 20 ±12 P-Channel Unit -20 ±12 -2.8 -2.1 -8 -1.4 1.15 0.75 -55/150 -55/150 V V A A A W ℃ ℃ 4.0 3.4 IDM IS PD TJ TSTG RθJA -3.4 -2.4 10 1.6 50 90 52 90 ℃/W 2006/03/20 Ver.3 Page 2 SPC6604 N & P Pair Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA=25℃ Unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current On-State Drain Current Symbol Conditions VGS=0V,ID= 250uA VGS=0V,ID=-250uA VDS=VGS,ID=250uA VDS=VGS,ID=-250uA VDS=0V,VGS=±12V VDS=0V,VGS=±12V VDS= 20V,VGS=0V VDS=-20V,VGS=0V VDS= 20V,VGS=0V TJ=55℃ VDS=-20V,VGS=0V TJ=55℃ VDS≥ 4.5V,VGS = 10V VDS≤ -4.5V,VGS =-10V VGS=4.5V,ID=4.0A VGS=-4.5V,ID=-3.4A VGS=2.5V,ID=3.4A VGS=-2.5V,ID=-2.4A VGS=1.8V,ID=2.8A VGS=-1.8V,ID=-1.7A VGS=1.25V,ID=1.0A VGS=-1.25V,ID=-1.0A VDS=5V,ID=-3.6A VDS=-5V,ID=-2.8A IS=1.6A,VGS=0V IS=-1.5A,VGS=0V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min. 20 -20 0.4 -0.35 Typ Max. Unit V(BR)DSS VGS(th) IGSS IDSS ID(on) 1.0 -0.8 ±100 ±100 1 -1 10 -10 0.040 0.068 0.046 0.090 0.056 0.113 0.105 0.185 10 6 0.8 -0.8 4.8 4.8 1.0 1.0 1.0 1.0 8 10 12 13 30 18 12 15 0.050 0.085 0.060 0.110 0.075 0.130 0.120 0.200 1.2 -1.2 8 8 V nA uA A 6 -6 Drain-Source On-Resistance RDS(on) Ω Forward Transconductance Diode Forward Voltage Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge gfs VSD S V Qg Qgs Qgd td(on) N-Channel VDS=6V,VGS=4.5V, ID≡2.8A P-Channel VDS=-6V,VGS=-4.5V ,ID≡-2.8A nC Turn-On Time tr td(off) Turn-Off Time tf N-Channel VDD=6V,RL=6Ω ,ID≡1.0A VGEN=4.5V ,RG=6Ω P-Channel VDD=-6V,RL=6Ω ,ID≡-1.0A VGEN=-4.5V ,RG=6Ω 14 16 18 23 35 25 16 20 nS 2006/03/20 Ver.3 Page 3 SPC6604 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( N-Channel ) 2006/03/20 Ver.3 Page 4 SPC6604 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( N-Channel ) 2006/03/20 Ver.3 Page 5 SPC6604 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( N-Channel ) 2006/03/20 Ver.3 Page 6 SPC6604 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( P-Channel ) 2006/03/20 Ver.3 Page 7 SPC6604 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( P-Channel ) 2006/03/20 Ver.3 Page 8 SPC6604 N & P Pair Enhancement Mode MOSFET TYPICAL CHARACTERISTICS ( P-Channel ) 2006/03/20 Ver.3 Page 9 SPC6604 N & P Pair Enhancement Mode MOSFET TSOP- 6P PACKAGE OUTLINE 2006/03/20 Ver.3 Page 10 SPC6604 N & P Pair Enhancement Mode MOSFET Information provided is alleged to be exact and consistent. SYNC Power Corporation presumes no responsibility for the penalties of use of such information or for any violation of patents or other rights of third parties which may result from its use. No license is granted by allegation or otherwise under any patent or patent rights of SYNC Power Corporation. Conditions mentioned in this publication are subject to change without notice. This publication surpasses and replaces all information previously supplied. SYNC Power Corporation products are not authorized for use as critical components in life support devices or systems without express written approval of SYNC Power Corporation. ©The SYNC Power logo is a registered trademark of SYNC Power Corporation ©2004 SYNC Power Corporation – Printed in Taiwan – All Rights Reserved SYNC Power Corporation 9F-5, No.3-2, Park Street NanKang District (NKSP), Taipei, Taiwan 115 Phone: 886-2-2655-8178 Fax: 886-2-2655-8468 ©http://www.syncpower.com 2006/03/20 Ver.3 Page 11