SPC6801

SPC6801 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC6801combines the Trench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an TSOP-6P package. The Trench MOSFET is the P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. The Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. APPLICATIONS Battery Powered System DC/DC Converter Load Switch Cell Phone FEATURES P-Channel -30V/-2.8A,RDS(ON)=105mΩ@VGS=- 10V -30V/-2.5A,RDS(ON)=115mΩ@VGS=-4.5V -30V/-1.5A,RDS(ON)=150mΩ@VGS=-2.5V Schottky VKA (V) = 20V, IF = 1A, VF