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1N4152

1N4152

  • 厂商:

    SYNSEMI

  • 封装:

  • 描述:

    1N4152 - HIGH SPEED SWITCHING DIODE - SynSemi, Inc.

  • 数据手册
  • 价格&库存
1N4152 数据手册
1N4152 FEATURES : • High switching speed: max. 4 ns • Peak reverse voltage:max. 40 V • Pb / RoHS Free HIGH SPEED SWITCHING DIODE DO - 35 Glass (DO-204AH) 0.079(2.0 )max. 1.00 (25.4) min. Cathode Mark 0.150 (3.8) max. MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g 0.020 (0.52)max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Ta = 25 °C unless otherwise noted) Parameter Maximum Peak Reverse Voltage Maximum Average Forward Current Maximum Non-repetitive Peak Forward Surge Current at tp = 1s at tp =1 µs Thermal Resistance Junction to Ambient Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Symbol VRM IF(AV) IFSM RӨJA PD TJ TSTG Value 75 150 1.0 4.0 300 500 175 -65 to + 200 Unit V mA A °C/W mW °C °C Electrical Characteristics (Ta = 25 °C unless otherwise noted) Parameter Reverse Current Symbol IR Test Condition VR = 30 V VR = 30 V , Ta = 150 °C IF = 0.1 mA IF = 0.25 mA IF = 1.0 mA IF = 2.0 mA IF = 10 mA IF = 20 mA IR = 5 µA f = 1MHz ; VR = 0 IF = IR = 10 mA, RL = 100 Ω, Irr = 1mA IF = 10 mA , VR = 6 V, RL = 100 Ω, Irr = 1 mA Min 0.49 0.53 0.59 0.62 0.70 0.74 40 - Typ - Max 50 50 0.55 0.59 0.67 0.70 0.81 0.88 2.0 4 2 Unit nA µA Forward Voltage VF V Reverse Breakdown Voltage Diode Capacitance Reverse Recovery Time V(BR)R Cd Trr1 Trr2 V pF ns ns Page 1 of 1 Rev. 01 : May 9, 2006
1N4152 价格&库存

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