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1N4154

1N4154

  • 厂商:

    SYNSEMI

  • 封装:

  • 描述:

    1N4154 - HIGH SPEED SWITCHING DIODE - SynSemi, Inc.

  • 数据手册
  • 价格&库存
1N4154 数据手册
1N4154 FEATURES : • High switching speed: max. 2 ns • Reverse voltage:max. 25 V • Repetitive peak reverse voltage:max. 35 V • Pb / RoHS Free HIGH SPEED SWITCHING DIODE DO - 35 Glass (DO-204AH) 0.079(2.0 )max. 1.00 (25.4) min. Cathode Mark 0.150 (3.8) max. 0.020 (0.52)max. MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Ta = 25 °C unless otherwise noted) Parameter Maximum Repetitive Peak Reverse Voltage Maximum Reverse Voltage Maximum Average Forward Current Maximum Forward Current Maximum Repetitive Peak Forward Current Maximum Peak Forward Surge Current at tp = 1µs Thermal Resistance Junction to Ambient (l =4mm, TL = constant) Power Dissipation (l = 4mm, TL ≤ 25 °C) Operating Junction Temperature Storage Temperature Range Symbol VRRM VR IF(AV) IF IFRM IFSM RӨJA PD TJ TSTG Value 35 25 150 300 500 2.0 350 500 175 -65 to + 175 Unit V V mA mA mA A K/W mW °C °C Electrical Characteristics (Ta = 25 °C unless otherwise noted) Parameter Reverse Current Forward Voltage Reverse Breakdown Voltage Diode Capacitance Reverse Recovery Time Symbol IR VF V(BR)R Cd Trr Test Condition VR = 25 V VR = 25 V , Ta = 150 °C IF = 30 mA IR = 5 µA ,tp/T =0.01,tp=0.3ms f = 1MHz ; VR = 0, VHF = 50mV IF = IR = 10 mA, iR = 1 mA IF = 10 mA , VR = 6 V, RL = 100 Ω, iR= 0.1 x IR Min 35 - Typ 9 0.88 - Max 100 100 1.0 4 4 2 Unit nA µA V V pF ns ns Page 1 of 2 Rev. 01 : May 9, 2006 RATING AND CHARACTERISTIC CURVES ( 1N4154 ) FIG1. - FORWARD CURRENT VS. FORWARD VOLTAGE 1000 FIG.2 - REVERSE CURRENT VS. JUNCTION TEMPERATURE 100 FORWARD CURRENT, IF (mA) 100 REVERSE CURRENT, IR (µA) Scattering Limit 10 TJ = 100 °C 10 TJ = 25 °C 1.0 1.0 0.1 VR =25 V 0.1 0 0.4 0.8 1.2 1.6 2.0 0.01 0 40 80 120 160 200 FORWARD VOLTAGE , VF (V) JUNCTION TEMPERATURE , TJ (°C) FIG3. - DIODE CAPACITANCE VS. REVERSE VOLTAGE 3.0 DIODE CAPACITANCE, Cd (pF) 2.5 f = 1 MHz TJ = 25 °C 2.0 1.5 1.0 0.5 0 0.1 1.0 10 100 REVERSE VOLTAGE , VR (V) Page 2 of 2 Rev. 01 : May 9, 2006
1N4154 价格&库存

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