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1N4454

1N4454

  • 厂商:

    SYNSEMI

  • 封装:

  • 描述:

    1N4454 - HIGH SPEED SWITCHING DIODE - SynSemi, Inc.

  • 数据手册
  • 价格&库存
1N4454 数据手册
1N4454 FEATURES : • High switching speed: max. 4 ns • General application • Continuous reverse voltage:max. 75 V • peak reverse voltage:max. 100 V • Pb / RoHS Free HIGH SPEED SWITCHING DIODE DO - 35 Glass (DO-204AH) 0.079(2.0 )max. 1.00 (25.4) min. Cathode Mark 0.150 (3.8) max. MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g 0.020 (0.52)max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at Parameter Maximum Reverse Voltage Maximum Peak Reverse Voltage Maximum Continuous Forward Current Maximum Average Forward Current, Half wave Rectification with Resistive Load , f ≥ 50Hz (1) Maximum Surge Forward Current at t < 1s, Tj = 25 °C (1) Maximum Power Dissipation (1) 25 °C ambient temperature unless otherwise specified.) Symbol VRRM VRM IF IF(AV) IFSM PD TJ TS Value 75 100 200 150 0.5 500 175 -65 to + 175 Unit V V mA mA A mW °C °C Maximum Junction Temperature Storage Temperature Range Note: (1) Valid provided that leads at a distance of 8mm from case are kept at ambient temperature Electrical Characteristics (Ta = 25°C unless otherwise noted) Parameter Reverse Current Forward Voltage Revwrse Breakdown Voltage Diode Capacitance Reverse Recovery Time Symbol IR VF V(BR)R Cd Trr Test Condition V R = 50 V V R = 75 V IF = 10 mA test with 100µA pulses f = 1MHz ; VR = 0 IF = 10 mA to IR = 1mA VR = 6V , RL = 100 Ω Min 100 - Typ - Max 100 5 1 2.0 4 Unit nA µA V V pF ns Page 1 of 2 Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( 1N4454 ) FIG. 1 ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE FIG. 2 TYPICAL FORWARD VOLTAGE 800 1000 Power Disspation, PD (mW) 600 Forward Current , IF (mA) 100 10 TJ = 25°C 400 1 200 0.1 0 0 100 200 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Ambient Temperature , Ta (°C) Forward Voltage , VF (V) FIG. 3 TYPICAL DIODE CAPACITANCE AS A FUNCTION OF REVERSE VOLTAGE FIG. 4 TYPICAL REVERESE CURRENT VERSUS JUNCTION TEMPERATURE 1.2 104 1.0 Diode Capacitance , Cd (pF) Reverse Current , IR (nA) 0.9 0.8 103 102 VR = 20V 0.7 f = 1MHz; 0.6 TJ = 25°C 10 0.5 1 2 4 6 8 10 0 100 200 0.4 0 Reverse Voltage , VR (V) Junction Temperature , Ta (°C) Page 2 of 2 Rev. 02 : March 25, 2005
1N4454 价格&库存

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