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BAW76

BAW76

  • 厂商:

    SYNSEMI

  • 封装:

  • 描述:

    BAW76 - HIGH SPEED SWITCHING DIODES - SynSemi, Inc.

  • 数据手册
  • 价格&库存
BAW76 数据手册
BAW75 ~ BAW76 FEATURES : • High switching speed: max. 4 ns • Reverse voltage:max. 25V , 50V • Peak reverse voltage:max. 35V, 75 V • Pb / RoHS Free HIGH SPEED SWITCHING DIODES DO - 35 Glass (DO-204AH) 0.079(2.0 )max. 1.00 (25.4) min. Cathode Mark 0.150 (3.8) max. MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g 0.020 (0.52)max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) Maximum Ratings and Thermal Characteristics (Rating at Parameter Maximum Peak Reverse Voltage BAW75 BAW76 Maximum Reverse Voltage Maximum Average Forward Current Half Wave Recitication with Resistive Load , f ≥ 50Hz Maximum Power Dissipation Maximum Surge Forward Current at t < 1µs , Tj = 25 °C Maximum Junction Temperature Storage Temperature Range BAW75 BAW76 25 °C ambient temperature unless otherwise specified.) Symbol VRM Value 25 50 35 75 150 (1) 500 2 200 -65 to + 200 (1) Unit V VRM V IF(AV) PD IFSM TJ TS mA mW A °C °C Note : (1) Valid provided that leads are kept at ambient temperature at a distance of 8mm from case. Electrical Characteristics (TJ = 25°C unless otherwise noted) Parameter Reverse Current Forward Voltage BAW75 BAW76 BAW75 BAW76 BAW75 BAW76 BAW75 BAW76 Symbol IR VF V(BR)R Cd Trr Test Condition V R = 25 V V R = 50 V IF = 30 mA IF = 100 mA Test with 5µA pulses f = 1MHz ; VR = 0 IF = 10 mA , IR = 10 mA Irr = 1mA Min 35 75 - Typ - Max 100 100 1.0 1.0 4.0 2.0 4 Unit nA V V pF ns Reverse Breakdown Voltage Diode Capacitance Reverse Recovery Time Page 1 of 2 Rev. 02 : March 25, 2005 RATING AND CHARACTERISTIC CURVES ( BAW75 ~ BAW76 ) FIG. 1 ADMISSIBLE POWER DISSIPATION VERSUS AMBIENT TEMPERATURE FIG. 2 TYPICAL FORWARD VOLTAGE 500 1000 POWER DISSIPATION, PD (mW) Forward Current , IF (mA) 400 100 300 10 TJ = 25°C 1 200 100 0 0 100 200 0.1 0 0.4 0.8 1.2 1.4 1.6 Ambient Temperature , Ta (°C) Forward Voltage , VF (V) FIG. 3 TYPICAL DIODE CAPACITANCE AS A FUNCTION OF REVERSE VOLTAGE FIG. 4 TYPICAL REVERESE CURRENT VERSUS JUNCTION TEMPERATURE 1.2 105 1.0 Diode Capacitance , Cd (pF) 0.9 0.8 Reverse Current , IR (nA) 104 103 0.7 f = 1MHz; 0.6 TJ = 25°C 102 0.5 10 0.4 0 10 20 1 0 100 200 Reverse Voltage , VR (V) Junction Temperature , Ta (°C) Page 2 of 2 Rev. 02 : March 25, 2005
BAW76 价格&库存

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