LSI1012XT1G

TAK CHEONG ® SEM IC O N DU C TO R Plastic Package N-Channel 1.8-V (G-S) MOSFET 3 TA = 25°C unless otherwise noted Absolute Maximum Ratings Symbol Green Product Parameter 5 secs Steady State Units 2 VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ±6V V ID Continuous Drain Current e Pulsed Drain Current IS Continuous Source Current TSTG TJ ESD Power Dissipation 600 400 d IDM PD TA=25℃ TA=85℃ e 500 350 1000 mA mA e 275 250 mA TA=25℃ TA=85℃ 175 90 150 80 mW Storage Temperature Range Operating Junction Temperature Gate-source ESD Rating (HBM, Method 3015) -55 to +150 °C +150 °C 2000 V 1. Gate 2. Source 3. Drain 1 SOT-523 These ratings are limiting values above which the serviceability of the device may be impaired. Notes: d. Pulse width limited by maximum junction temperature. e. Surface mounted on FR4 board. FEATURES z z z z z z z z z z z Electrical Symbol: TrenchFET ®Power MOSFET: 1.8-V Rated Gate-Source ESD Protected: 2000V High-side Switching Low On-Resistance: 0.7Ω Low Threshold: 0.8V (Typ.) Fast Switching Speed: 10ns S-Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight: approx. 0.002g Device Marking Code: A BENEFITS z z z z z Ease in Driving Switches Low Offset(Error) Voltage Low-Voltage operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS z z z z Drivers: Relays, Solenoids, Lamps, Hammers, displays, Memories Battery Operated Systems Power Supply Converter Circuits Load/Power Switching Cell Phones, agers DB Number: DB-270 March 2015, Revision A Page 1 LSI1012XT1G 150mW SOT-523 SURFACE MOUNT TAK CHEONG SEM IC O N DU C TO R Electrical Characteristics (TA = 25°C unless otherwise noted) Static Symbol Parameter Test Condition Limits Min Typ Gate-Threshold Voltage VDS= VGS, ID=250uA IGSS Gate-Body Leakage VDS=0V, VGS=±4.5V IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V ID(ON) On-state Drain Current a VDS=5V, VGS=4.5V Drain-Source On-Resistance a VGS=4.5V, ID=600mA 0.41 0.70 VGS=2.5V, ID=500mA 0.53 0.85 VGS=1.8V, ID=350mA 0.70 1.25 VDS=10V, ID=400mA 1 Vth(GS) RDS(on) gfs Forward Trans Conductance VSD Diode Forward Voltage a a 0.45 Max 0.9 Volts ±0.5 ±1.0 uA 0.3 100 nA 700 mA 0.8 IS=150mA, VGS=0V Unit Ω ms 1.2 V Dynamic b Parameter Symbol Test Condition Limits Min Typ Max -- 750 -- -- 75 -- Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge -- 225 -- Turn-On Delay Time -- 5 -- -- 5 -- -- 25 -- -- 11 -- Td(on) tr td(off) tf Rise Time Turn-Off Delay Time Fall Time VDS=10V, VGS=4.5V, ID=250mA VDD=10V, RL=47Ω, ID=200mA, VGEN=4.5V RG=10Ω Unit pC ns Notes: a. Pulse test: pulse width≤300us, duty cycle ≤2%. b. Guaranteed by design, not subject to production testing. DB Number: DB-270 March 2015, Revision A Page 2 TAK CHEONG SEM IC O N DU C TO R SOT-523 Package Outline DIM Typical Soldering Pattern: MILLIMETERS INCHES MIN MAX MIN MAX A 0.70 0.90 0.028 0.035 A1 0.00 0.10 0.000 0.004 A2 0.70 0.80 0.028 0.031 b1 0.15 0.25 0.006 0.010 b2 0.25 0.35 0.010 0.014 c 0.10 0.20 0.004 0.008 D 1.50 1.70 0.059 0.067 E 0.70 0.90 0.028 0.035 E1 1.45 1.75 0.057 0.069 e e1 0.50 TYP. 0.90 L 0.020 TYP. 1.10 0.035 0.40 REF. L1 0.10 θ 0 O 0.043 0.016 REF. 0.30 8 O 0.004 0 O 0.012 8 O NOTES: 1. Above package outline conforms to JEITA EAIJ ED-7500A SC-75A. 2. Dimensions are exclusive of Burrs, Mold Flash & Tie Bar extrusions. DB Number: DB-270 March 2015, Revision A Page 3 TAK CHEONG ® DISC LA I MER NOTIC E NOTICE The information presented in this document is for reference only. Tak Cheong reserves the right to make changes without notice for the specification of the products displayed herein. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used with equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), Tak Cheong Semiconductor Co., Ltd., or anyone on its behalf, assumes no responsibility or liability for any damagers resulting from such improper use of sale. This publication supersedes & replaces all information reviously supplied. For additional information, please visit our website http://www.takcheong.com, or consult your nearest Tak Cheong’s sales office for further assistance. Number: DB-100 April 14, 2008 / A