1N5817, 1N5819
FEATURES
SCHOTTKY DIODE
SOT-23-3L
1. ANODE 3.CATHODE
1. 02
Power dissipation PD : 300 mW(Tamb=25℃)
0. 0. 95¡ À 025
2. 80¡ À 05 0. 1. 60¡ À0. 05
Collector current A IF : 1 Collector-base voltage V VR : 1N5817: 20 1N5819: 40 V Operating and storage junction temperature range TJ,Tstg: -55℃ to +150℃ —
1N5817 1N5819 +
Marking:SJ Marking:SL
ELECTRICAL CHARACTERISTICS(Tamb=25℃
unless otherwise specified)
Parameter Reverse breakdown voltage
Symbol V(BR) 1N5817 1N5819 IR 1N5817 1N5819 1N5817 1N5819 CD
Test
conditions IR= 1mA VR=20V VR=40V IF=1A* IF=1A* IF=3A* IF=3A*
MIN 20 40
MAX
UNIT V
Reverse voltage
leakage current
1 0.45 0.6 0.75 0.9 120
0. 35
mA
Forward
voltage
VF
V
Diode
capacitance
VR=0V
f=1MHz
pF
2. 92¡ À0. 05
1. 9
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