2SA1201

Transys Electronics LIMITED SOT-89 Plastic-Encapsulated Transistors 2SA1201 FEATURES Power dissipation PCM : 500 mW (Tamb=25℃) 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR (PNP) SOT-89 1. BASE Collector current : -800 mA ICM Collector-base voltage V V(BR)CBO : -120 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) VBE unless otherwise specified) Test conditions MIN TYP MAX UNIT V V V Ic=-1mA, IE=0 Ic=-10mA, IB=0 IE=-1mA, IC=0 VCB=-120V, IE=0 VEB=-5V, IC=0 VCE=-5V, IC=-100mA IC=-500mA, IB=-50mA VCE=-5V, IC=-500mA VCE=-5V, IC=-100mA VCB=-10V, IE=0, f=1MHz -120 -120 -5 -0.1 -0.1 80 240 -1 -1 120 30 µA µA V V MHz pF fT Cob CLASSIFICATION OF hFE(1) Rank Range Marking O 80-160 DO Y 120-240 DY