2SB647

Transys Electronics LIMITED TO-92MOD Plastic-Encapsulated Transistors TO-92MOD 1. EMITTER 2. COLLECTOR 3. BASE 2SB647/2SB647A FEATURE Power dissipation PCM: TRANSISTOR (PNP) 0.9 W (Tamb=25℃) Collector current -1 A ICM: Collector-base voltage 120 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage 2SB647 unless otherwise specified) Test conditions MIN -120 -80 -100 -5 -10 60 60 30 -1 140 V MHz 320 200 MAX UNIT V V V µA Symbol V(BR)CBO V(BR)CEO 2SB647A Ic= -10µA , IE=0 IC=-1mA , IB=0 IE= -10µA, IC=0 VCB= -100 V, IE=0 VCE=-5 V, IC= -150mA VCE=-5 V, IC= -500mA IC=-500mA, IB=-50mA VCE=-5V, IC= -150mA VCE=-10V, IE=0 f=1 MHz Emitter-base breakdown voltage Collector cut-off current 2SB647 2SB647A DC current gain V(BR)EBO ICBO hFE(1)* hFE(2) Collector-emitter saturation voltage Transition frequency VCEsat fT Cob Output capacitance 20 pF CLASSIFICATION OF hFE Rank 2SB647 Range 2SB647A 60-120 100-200 B 60-120 C 100-200 D 160-320