2SB740

Transys Electronics LIMITED TO-92MOD Plastic-Encapsulated Transistors TO-92MOD 1. EMITTER 2SB740 FEATURE Power dissipation PCM: TRANSISTOR (PNP) 2. COLLECTOR 0.9 W (Tamb=25℃) 3. BASE Collector current -1 A ICM: Collector-base voltage -70 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCEsat unless otherwise specified) Test conditions MIN -70 -50 -6 -1 -0.2 100 320 -0.6 100 V MHz MAX UNIT V V V µA µA Ic= -10µA , IE=0 IC=-1mA , IB=0 IE= -10µA, IC=0 VCB= -55 V, IE=0 VEB= -6 V, IC=0 VCE=-2 V, IC= -100mA IC= -1A, IB=-100mA VCE=-2V, IC= -10mA VCE=-10V, IE=0, f=1 MHz fT Cob Output capacitance 45 pF CLASSIFICATION OF hFE Rank Range B 100-200 C 160-320