Transys
Electronics
LIMITED
TO-92 Plastic-Encapsulated Transistors
2SC1213 2SC1213A
FEATURE Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO:
TRANSISTOR (NPN)
TO-92
1. EMITTER
0.4
W (Tamb=25℃)
2. COLLECTOR
3. BASE
0.5
A
123
2SC1213 : 35 V 2SC1213A : 50 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter Collector-base breakdown voltage 2SC1213 2SC1213A Collector-emitter breakdown voltage 2SC1213 2SC1213A Emitter-base breakdown voltage Collector cut-off current
unless otherwise specified)
Test conditions MIN 35 50 35 50 4 0.5 60 10 0.2 0.6 0.75 V V 320 TYP MAX UNIT V
Symbol V(BR)CBO
Ic= 10µA , IE=0
V(BR)CEO V(BR)EBO ICBO hFE(1)
IC= 1 mA , IB=0 IE=10µA, IC=0 VCB= 20V , IE=0 VCE=3V, IC= 10mA VCE=3V, IC= 500mA IC= 150mA, IB= 15 mA VCE= 3V, IC= 10 mA
V V µA
DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter voltage VCE(sat) VBE
CLASSIFICATION OF hFE(1)
Rank Range B 60-120 C 100-200 D 160-320
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