2SC2001

Transys Electronics LIMITED TO-92 Plastic-Encapsulated Transistors 2SC2001 FEATURES Power dissipation PCM: Collector current ICM: Collector-base voltage V(BR)CBO: TRANSISTOR (NPN) TO-92 0.6 0.7 30 W (Tamb=25℃) A V 1. EMITTER 2. COLLECTOR 3. BASE Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 123 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) Test conditions MIN 30 25 5 MAX UNIT V V V Ic=100µA , IE=0 IC=10mA , IB=0 IE=100µA, IC=0 VCB=30 V , IE=0 VCE=20 V , IB=0 VEB=5 V , IC=0 0.1 0.1 0.1 90 400 0.6 1.2 µA µA µA VCE=1V, IC=100mA IC=700mA, IB= 70mA IC= 700mA, IB=70mA VCE=6V, IC= 10mA V V Transition frequency fT f = 30MHz 50 MHz CLASSIFICATION OF hFE Rank Range M 90-180 L 135-270 K 200-400