BAV199LT1

Transys Electronics LIMITED SOT-23 Plastic-Encapsulated Diodes BAV199LT1 FEATURES Power dissipation 1. 0 SWITCHING DIODE SOT-23 PD: 225 mW (Tamb=25℃) 0. 95 TJ, Tstg: -55℃ to +150℃ Unit: mm M ki ng JY ar M ki ng JY ar ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) IR Test conditions MIN 70 5 MAX UNIT V nA IR= 100µA VR=70V IF=1mA Forward voltage VF IF=10mA IF=50mA IF=150mA Diode capacitance CD t rr 900 1000 1100 1250 2 3 mV 0. 4 Forward Current 215 mA IF: Reverse Voltage 70 V VR: Operating and storage junction temperature range 2. 4 1. 3 0. 95 2. 9 1. 9 VR=0V, f=1MHz pF µS Reverse recovery time