BD136

Transys Electronics LIMITED TO-126 Plastic-Encapsulated Transistors BD136/BD138/BD140 FEATURES Power dissipation PCM: 1.25 W (Tamb=25℃) 1. EMITTER 2. COLLECTOR 3. BASE TRANSISTOR (PNP) TO-126 Collector current -1.5 A ICM: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol 123 unless otherwise specified) Test conditions BD136 MIN TYP MAX UNIT -45 -60 -80 -45 -60 -80 -5 -0.1 -10 25 40 40 25 -0.5 -1 V V V µA µA V V Collector-base breakdown voltage V(BR)CBO Ic=-100µA, IE=0 BD138 BD140 BD136 Collector-emitter breakdown voltage V(BR)CEO Ic=-30mA, IB=0 BD138 BD140 Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current V(BR)EBO ICBO IEBO hFE(1) IE=-100µA, IC=0 VCB=-30V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-5Ma BD136 250 160 DC current gain hFE(2) VCE=-2V, IC=-150mA BD138 BD140 hFE(3) Collector-emitter saturation voltage Base-emitter voltage VCE(sat) VBE VCE=-2V, IC=-500mA IC=-500mA, IB=-50mA VCE=-2V, IC=-500mA CLASSIFICATION OF hFE(2) Rank Range 6 40-100 10 63-160 16 100-250