PN2907

Transys Electronics LIMITED PNP SILICON PLANAR EPITAXIAL TRANSISTORS PN2907 PN2907A TO-92 Plastic Package E BC Complementary Silicon Transistors for Switching and Linear Applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 º C unless specified otherwise) DESCRIPTION SYMBOL VCEO Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation@ Ta=25 º C Derate Above 25 º C Power Dissipation@ Tc=25 º C Derate Above 25 º C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to ambient Junction to case VCBO VEBO IC PD PD Tj, Tstg PN2907 40 60 5 600 625 5.0 1.5 12 -55 to +150 PN2907A 60 60 5 UNITS V V V mA mW mW/ º C W mW/ º C ºC Rth(j-a) Rth(j-c) 200 83.3 º C/W º C/W ELECTRICAL CHARACTERISTICS (Ta=25 º C Unless Specified Otherwise) DESCRIPTION SYMBOL TEST CONDITION PN2907 IC=10mA,IB=0 BVCEO >40 Collector Emitter Voltage BVCBO IC=10µA,IE=0 Collector Base Voltage >60 Emitter Base Voltage Collector Cut off Current BVEBO ICBO IE=10µA, IC=0 VCB=50V, IE = 0 Ta= 150 º C VCB=50V, IE = 0 ICEX ICEO Emitter Cut off Current Base Cut off Current DC Current Gain IEBO IBEX hFE VCE =30V, VEB=0.5V VCE=10V, IB = 0 VEB=3V, IC = 0 VCE =30V, VEB=0.5V VCE=10V,IC=0.1mA VCE=10V,IC=1mA VCE=10V,IC=10mA VCE=10V*,IC=150mA VCE=10V*,IC=500mA >5 60 >60 >5