RB520S-30
Schottky barrier Diodes
FEATURES Small surface mounting type Low reverse current and low forward voltage High reliability
Maximum Ratings and Electrical Characteristics, Single Diode @T A=25℃ Parameter DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature Symbol VR IO IFSM Tj Tstg Limits 30 200 1 125 -45~+125 Unit V mA A ℃ ℃
Electrical Ratings @TA=25℃ Parameter Forward voltage Reverse current Symbol VF IR Min. Typ. Max. 0.6 1.0 Unit V µA Conditions IF=200mA VR=10V
Typical Characteristics
RB520S-30
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- 1+0.07365
- 100+0.06874
- 300+0.06383
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- 5000+0.05499
- 国内价格
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- 5000+0.0625
- 10000+0.06
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- 20+0.08499
- 200+0.07966
- 600+0.07433
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- 10+0.0752
- 50+0.06956
- 200+0.06486
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