TC1411EPA

1 TC1411 TC1411N 1A HIGH-SPEED MOSFET DRIVERS FEATURES s s s s s s s s s s Latch-Up Protected: Will Withstand 500mA Reverse Current Input Will Withstand Negative Inputs Up to 5V ESD Protected .................................................... 4 kV High Peak Output Current .................................. 1A Wide Operating Range .......................... 4.5V to 16V High Capacitive Load Drive Capability .......................... 1000pF in 25nsec Short Delay Time .................................. 30nsec Typ Consistent Delay Times With Changes in Supply Voltage Matched Delay Times Low Supply Current — With Logic “1” Input ................................. 500µA — With Logic “0” Input ................................. 150µA Low Output Impedance ....................................... 8Ω Pinout Same as TC1410/12/13 GENERAL DESCRIPTION The TC1411/1411N are 1A CMOS buffer/drivers. They will not latch up under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking of either polarity occurs on the ground pin. They can accept, without damage or logic upset, up to 500 mA of current of either polarity being forced back into their output. All terminals are fully protected against up to 4 kV of electrostatic discharge. As MOSFET drivers, the TC1411/1411N can easily switch 1000 pF gate capacitance in 25nsec with matched rise and fall times, and provide low enough impedance in both the ON and the OFF states to ensure the MOSFET’s intended state will not be affected, even by large transients. The rise and fall time edges are matched to allow driving short-duration inputs with greater accuracy. 2 3 4 5 6 s s ORDERING INFORMATION Part No. Package 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP 8-Pin SOIC 8-Pin Plastic DIP PIN CONFIGURATIONS VDD 1 IN 2 NC 3 GND 4 2 6, 7 8 VDD 7 OUT VDD 1 IN 2 NC 3 GND 4 2 6, 7 8 VDD 7 OUT Temp. Range 0°C to +70°C 0°C to +70°C – 40°C to +85°C – 40°C to +85°C 0°C to +70°C 0°C to +70°C – 40°C to +85°C – 40°C to +85°C TC1411 6 OUT 5 GND TC1411N 6 OUT 5 GND TC1411COA TC1411CPA TC1411EOA TC1411EPA TC1411NCOA TC1411NCPA TC1411NEOA TC1411NEPA INVERTING NONINVERTING NC = NO INTERNAL CONNECTION NOTE: SOIC pinout is identical to DIP. FUNCTIONAL BLOCK DIAGRAM TC1411 INVERTING OUTPUTS VDD 300mV OUTPUT NONINVERTING OUTPUTS 7 INPUT 4.7V TC1411N GND EFFECTIVE INPUT C = 10pF TC1411/N-10 10/11/96 8 4-189 TELCOM SEMICONDUCTOR, INC. 1A HIGH-SPEED MOSFET DRIVERS TC1411 TC1411N ABSOLUTE MAXIMUM RATINGS* Supply Voltage ......................................................... +20V Input Voltage, IN A or IN B ..(VDD + 0.3V) to (GND – 5.0V) Maximum Chip Temperature ................................. +150°C Storage Temperature Range ................ – 65°C to +150°C Lead Temperature (Soldering, 10 sec) ................. +300°C Package Thermal Resistance CerDIP RθJ-A ................................................ 150°C/W CerDIP RθJ-C .................................................. 50°C/W PDIP RθJ-A ................................................... 125°C/W PDIP RθJ-C ..................................................... 42°C/W SOIC RθJ-A ................................................... 155°C/W SOIC RθJ-C ..................................................... 45°C/W Operating Temperature Range C Version ............................................... 0°C to +70°C E Version .......................................... – 40°C to +85°C Power Dissipation (TA ≤ 70°C) Plastic ............................................................. 730mW CerDIP ............................................................800mW SOIC ............................................................... 470mW *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS: Over operating temperature range with 4.5V ≤ VDD ≤ 16V, unless otherwise specified. Symbol Input VIH VIL IIN Logic 1 High Input Voltage Logic 0 Low Input Voltage Input Current 2.0 — –1 – 10 — — — — — — 8 10 10 1.0 — — 0.8 1 10 — 0.025 11 14 14 — — V V µA Parameter Test Conditions Min Typ Max Unit –5V ≤ VIN ≤ VDD TA = 25°C – 40°C ≤ TA ≤ 85°C Output VOH VOL RO High Output Voltage Low Output Voltage Output Resistance DC Test VDD – 0.025 DC Test — VDD = 16V, IO = 10mA TA = 25°C — — 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C — VDD = 16V — Duty Cycle ≤ 2% 0.5 VDD = 16V t ≤ 300 µsec Figure 1 TA = 25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C TA = 25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C TA = 25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C TA = 25°C 0°C ≤ TA ≤ 70°C – 40°C ≤ TA ≤ 85°C VDD = 16V — — — — — — — — — — — — — — V V Ω IPK IREV Peak Output Current Latch-Up Protection Withstand Reverse Current Rise Time A A Switching Time (Note 1) tR 25 27 29 25 27 29 30 33 35 30 33 35 0.5 0.1 35 40 40 35 40 40 40 45 45 40 45 45 1.0 0.15 nsec tF Fall Time Figure 1 nsec tD1 Delay Time Figure 1 nsec tD2 Delay Time Figure 1 nsec Power Supply IS Power Supply Current VIN = 3V VIN = 0V mA NOTE: 1. Switching times are guaranteed by design. 4-190 TELCOM SEMICONDUCTOR, INC. 1A HIGH-SPEED MOSFET DRIVERS TC1411 TC1411N 1 +5V INPUT 0V VDD 90% 2 tR 90% 10% tD1 90% VDD= 16V 4.7µF 0.1µF tF tD2 OUTPUT 1,8 INPUT 2 6,7 0V OUTPUT 10% 10% 3 4 tF CL = 1000pF TC1411 TC1411N Inverting Driver TC1411 +5V INPUT 90% 4,5 0V VDD 10% 90% 90% tD2 10% INPUT: 100 kHz, square wave, tRISE = tFALL £ 10nsec tD1 OUTPUT 0V 10% tR Noninverting Driver TC1411N Figure 1. Switching Time Test Circuit 5 6 7 Thermal Derating Curves 1600 1400 8 Pin DIP 8 Pin CerDIP 1000 800 8 Pin SOIC 600 400 200 0 0 10 20 30 40 50 60 70 80 90 100 110 120 MAX. POWER (mW) 1200 AMBIENT TEMPERATURE (°C) 8 TELCOM SEMICONDUCTOR, INC. 4-191 1A HIGH-SPEED MOSFET DRIVERS TC1411 TC1411N TYPICAL CHARACTERISTICS Quiescent Supply Current vs. Supply Voltage TA = 25°C 500 500 Quiescent Supply Current vs. Temperature VSUPPLY = 16V VIN = 3V 400 400 ISUPPLY (µA) ISUPPLY (µA) VIN = 3V 300 300 200 200 100 VIN = 0V 4 6 8 10 12 14 16 100 VIN = 0V 0 0 -40 -20 0 20 40 60 80 VDD (VOLTS) TEMPERATURE (°C) Input Threshold vs. Supply Voltage TA = 25°C 1.6 1.6 Input Threshold vs. Temperature VSUPPLY = 16V VTHRESHOLD (VOLTS) VTHRESHOLD (VOLTS) 1.5 1.5 VIH 1.4 VIH 1.4 1.3 1.3 1.2 VIL 1.2 VIL 1.1 4 6 8 10 12 14 16 1.1 -40 -20 VDD (VOLTS) TEMPERATURE (°C) 0 20 40 60 80 High-State Output Resistance 25 25 Low-State Output Resistance 20 T =8 20 Rds (ON) W Rds (ON) W 15 A 5°C 25°C 15 T A TA = =8 5°C TA = 25°C 10 TA = 10 –40°C 5 5 TA = –40° C 04 6 8 10 12 14 16 0 4 6 8 10 12 14 16 VDD (VOLTS) 4-192 VDD (VOLTS) TELCOM SEMICONDUCTOR, INC. 1A HIGH-SPEED MOSFET DRIVERS TC1411 TC1411N TYPICAL CHARACTERISTICS (Cont.) Rise Time vs. Supply Voltage CLOAD = 1000pF 100 100 1 Fall Time vs. Supply Voltage CLOAD = 1000pF 2 3 80 80 TRISE (nsec) 60 TFALL (nsec) TA = 85°C TA = 25°C 60 TA = 85°C 40 40 TA=25°C TA=–40°C 20 TA = –40°C 4 6 8 10 12 14 16 20 0 0 4 6 8 10 12 14 16 VDD (VOLTS) VDD (VOLTS) TD1 Propagation Delay vs. Supply Voltage CLOAD = 1000pF 100 TD2 Propagation Delay vs. Supply Voltage CLOAD = 1000pF 100 4 5 80 80 TD1 (nsec) TD2 (nsec) 60 TA = 85°C 60 TA = 25°C TA = 85°C TA=25°C 40 40 TA = –40°C 20 TA = –40°C 20 0 4 6 8 10 12 14 16 0 4 6 8 10 12 14 16 VDD (VOLTS) VDD (VOLTS) 6 7 Rise and Fall Times vs. Capacitive Load TA = 25°C, VDD = 16V Propagation Delays vs. Capacitive Load TA = 25°C, VDD = 16V PROPAGATION DELAYS (nsec) 100 36 TRISE, TFALL (nsec) 80 TRISE 34 TD2 60 32 40 TFALL 30 TD1 20 28 0 26 0 500 1000 1500 2000 2500 3000 3500 0 500 1000 1500 2000 2500 3000 3500 CLOAD (pF) CLOAD (pF) 4-193 8 TELCOM SEMICONDUCTOR, INC.