TC426EPA

TC426 TC427 TC428 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS FEATURES s High-Speed Switching (CL = 1000pF) ........... 30nsec s High Peak Output Current ................................. 1.5A s High Output Voltage Swing .................. VDD – 25mV GND + 25mV s Low Input Current (Logic "0" or "1") ................ 1µA s TTL/CMOS Input Compatible s Available in Inverting and Noninverting Configurations s Wide Operating Supply Voltage ............ 4.5V to 18V s Current Consumption — Inputs Low .................................................. 0.4mA — Inputs High .................................................... 8mA s Single Supply Operation s Low Output Impedance ........................................ 6Ω s Pinout Equivalent of DS0026 and MMH0026 s Latch-Up Resistant: Withstands > 500mA Reverse Current s ESD Protected ......................................................2kV PIN CONFIGURATIONS (DIP and SOIC) NC 1 IN A 2 GND 3 IN B 4 NC 1 IN A 2 GND 3 IN B 4 NC 1 IN A 2 GND 3 IN B 4 8 NC 7 OUT A 2, 4 7, 5 1 GENERAL DESCRIPTION The TC426/TC427/TC428 are dual CMOS high-speed drivers. A TTL/CMOS input voltage level is translated into a rail-to-rail output voltage level swing. The CMOS output is within 25 mV of ground or positive supply. The low impedance, high-current driver outputs swing a 1000pF load 18V in 30nsec. The unique current and voltage drive qualities make the TC426/TC427/TC428 ideal power MOSFET drivers, line drivers, and DC-to-DC converter building blocks. Input logic signals may equal the power supply voltage. Input current is a low 1µA, making direct interface to CMOS/bipolar switch-mode power supply control ICs possible, as well as open-collector analog comparators. Quiescent power supply current is 8mA maximum. The TC426 requires 1/5 the current of the pin-compatible bipolar DS0026 device. This is important in DC-to-DC converter applications with power efficiency constraints and high-frequency switch-mode power supply applications. Quiescent current is typically 6mA when driving a 1000pF load 18V at 100kHz. The inverting TC426 driver is pin-compatible with the bipolar DS0026 and MMH0026 devices. The TC427 is noninverting; the TC428 contains an inverting and noninverting driver. Other pin compatible driver families are the TC1426/ 27/28, TC4426/27/28, and TC4426A/27A/28A. 2 3 4 5 6 7 TC426 6 VDD 5 OUT B 8 NC 7 OUT A INVERTING 2, 4 7, 5 TC427 6 VDD 5 OUT B 8 NC 7 OUT A NONINVERTING ORDERING INFORMATION Part No. TC426COA TC426CPA TC426EOA TC426EPA TC426IJA TC426MJA TC427COA TC427CPA TC427EOA TC427EPA TC427IJA TC427MJA TC428COA TC428CPA TC428EOA TC428EPA TC428IJA TC428MJA 2 7 Package 8-Pin SOIC 8-Pin PDIP 8-Pin SOIC 8-Pin SOIC 8-Pin CerDIP 8-Pin CerDIP 8-Pin SOIC 8-Pin PDIP 8-Pin SOIC 8-Pin SOIC 8-Pin CerDIP 8-Pin CerDIP 8-Pin SOIC 8-Pin PDIP 8-Pin SOIC 8-Pin SOIC 8-Pin CerDIP 8-Pin CerDIP Configuration Inverting Inverting Inverting Complementary Inverting Inverting Noninverting Noninverting Noninverting Complementary Noninverting Noninverting Complementary Complementary Complementary Complementary Complementary Complementary Temperature Range 0°C to +70°C 0°C to +70°C –40°C to +85°C –40°C to +85°C –25°C to +85°C –55°C to +125°C 0°C to +70°C 0°C to +70°C –40°C to +85°C –40°C to +85°C –25°C to +85°C –55°C to +125°C 0°C to +70°C 0°C to +70°C –40°C to +85°C –40°C to +85°C –25°C to +85°C –55°C to +125°C TC426/7/8-7 10/11/96 TC428 6 VDD 5 OUT B 4 5 COMPLEMENTARY NC = NO INTERNAL CONNECTION FUNCTIONAL BLOCK DIAGRAM V+ 500µA 2.5mA TC426 TC427 TC428 NONINVERTING OUTPUT (TC427) INPUT INVERTING OUTPUT (TC426) Note: The TC428 has one inverting and one noninverting driver. Ground any unused driver input. 8 TELCOM SEMICONDUCTOR, INC. 4-169 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC426 TC427 TC428 ABSOLUTE MAXIMUM RATINGS* Supply Voltage ......................................................... +20V Input Voltage, Any Terminal .... VDD + 0.3V to GND – 0.3V Power Dissipation (TA ≤ 70°C) Plastic ...............................................................730mW CerDIP ..............................................................800mW SOIC .................................................................470mW Derating Factor Plastic ............................................................. 8mW/°C CerDIP ......................................................... 6.4mW/°C SOIC ............................................................... 4mW/°C Operating Temperature Range C Version ................................................. 0°C to +70°C I Version .............................................. – 25°C to +85°C E Version ............................................ – 40°C to +85°C M Version .......................................... – 55°C to +125°C Maximum Chip Temperature ................................. +150°C Storage Temperature Range ................ – 65°C to +150°C Lead Temperature (Soldering, 10 sec) ................. +300°C Min 2.4 — –1 VDD – 0.025 — — — — — — — — — — Typ — — — — — 10 6 1.5 — — — — — — Max — 0.8 1 — 0.025 15 10 — 30 30 50 75 8 0.4 Unit V V µA V V Ω Ω A nsec nsec nsec nsec mA mA ELECTRICAL CHARACTERISTICS: Symbol Parameter Logic 1, High Input Voltage Logic 0, Low Input Voltage Input Current High Output Voltage Low Output Voltage High Output Resistance Low Output Resistance Peak Output Current Rise Time Fall Time Delay Time Delay Time Power Supply Current TA = +25°C with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. Test Conditions Input VIH VIL IIN 0V ≤ VIN ≤ VDD Output VOH VOL ROH ROL IPK tR tF tD1 tD2 IOUT = 10 mA, VDD = 18V IOUT = 10 mA, VDD = 18V Switching Time (Note 1) Test Figure 1/2 Test Figure 1/2 Test Figure 1/2 Test Figure 1/2 VIN = 3V (Both Inputs) VIN = 0V (Both Inputs) Power Supply IS ELECTRICAL CHARACTERISTICS: Input VIH VIL IIN Logic 1, High Input Voltage Logic 0, Low Input Voltage Input Current High Output Voltage Low Output Voltage High Output Resistance Low Output Resistance Rise Time Fall Time Delay Time Delay Time Power Supply Current Over Operating Temperature Range with 4.5V ≤ VDD ≤ 18V, unless otherwise specified. 2.4 — –10 VDD – 0.025 — — — — — — — — — — — — — — 13 8 — — — — — — — 0.8 10 — 0.025 20 15 60 30 75 120 12 0.6 V V µA V V Ω Ω nsec nsec nsec nsec mA mA 0V ≤ VIN ≤ VDD Output VOH VOL ROH ROL tR tF tD1 tD2 IOUT = 10 mA, VDD = 18V IOUT = 10 mA, VDD = 18V Test Figure 1/2 Test Figure 1/2 Test Figure 1/2 Test Figure 1/2 VIN = 3V (Both Inputs) VIN = 0V (Both Inputs) Switching Time (Note 1) Power Supply IS NOTE: 1. Switching times guaranteed by design. 4-170 TELCOM SEMICONDUCTOR, INC. 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC426 TC427 TC428 *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may effect device reliability. 1 2 3 4 5 6 7 SUPPLY BYPASSING Charging and discharging large capacitive loads quickly requires large currents. For example, charging a 1000-pF load to18V in 25nsec requires an 0.72A current from the device power supply. To guarantee low supply impedance over a wide frequency range, a parallel capacitor combination is recommended for supply bypassing. Low-inductance ceramic disk capacitors with short lead lengths (< 0.5 in.) should be used. A 1 µF film capacitor in parallel with one or two 0.1 µF ceramic disk capacitors normally provides adequate bypassing. The TC426/427/428 CMOS drivers have greatly reduced quiescent DC power consumption. Maximum quiescent current is 8 mA compared to the DS0026 40 mA specification. For a 15V supply, power dissipation is typically 40 mW. Two other power dissipation components are: • Output stage AC and DC load power. • Transition state power. Output stage power is: Po = PDC + PAC = Vo (IDC) + f CL VS Where: Vo = DC output voltage IDC = DC output load current f = Switching frequency Vs = Supply voltage In power MOSFET drive applications the PDC term is negligible. MOSFET power transistors are high impedance, capacitive input devices. In applications where resistive loads or relays are driven, the PDC component will normally dominate. The magnitude of PAC is readily estimated for several cases: A. 1. f 2. CL 3. Vs 4. PAC = 20kHZ =1000pf = 18V = 65mW B. 1. f 2. CL 3. VS 4. PAC = 200kHz =1000pf =15V = 45mW GROUNDING The TC426 and TC428 contain inverting drivers. Ground potential drops developed in common ground impedances from input to output will appear as negative feedback and degrade switching speed characteristics. Individual ground returns for the input and output circuits or a ground plane should be used. INPUT STAGE The input voltage level changes the no-load or quiescent supply current. The N-channel MOSFET input stage transistor drives a 2.5mA current source load. With a logic "1" input, the maximum quiescent supply current is 8 mA. Logic "0" input level signals reduce quiescent current to 0.4 mA maximum. Minimum power dissipation occurs for logic "0" inputs for the TC426/427/428. Unused driver inputs must be connected to VDD or GND. The drivers are designed with 100 mV of hysteresis. This provides clean transitions and minimizes output stage current spiking when changing states. Input voltage thresholds are approximately 1.5V, making the device TTL compatible over the 4.5V to 18V supply operating range. Input current is less than 1 µA over this range. The TC426/427/428 may be directly driven by the TL494, SG1526/1527, SG1524, SE5560, and similar switchmode power supply integrated circuits. POWER DISSIPATION The supply current vs frequency and supply current vs capacitive load characteristic curves will aid in determining power dissipation calculations. During output level state changes, a current surge will flow through the series connected N and P channel output MOSFETS as one device is turning "ON" while the other is turning "OFF". The current spike flows only during output transitions. The input levels should not be maintained between the logic "0" and logic "1" levels. Unused driver inputs must be tied to ground and not be allowed to float. Average power dissipation will be reduced by minimizing input rise times. As shown in the characteristic curves, average supply current is frequency dependent. 8 4-171 TELCOM SEMICONDUCTOR, INC. 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC426 TC427 TC428 TYPICAL CHARACTERISTICS Rise and Fall Times vs Supply Voltage 70 C L = 1000pF TA = +25°C DELAY TIME (nsec) Delay Times vs Supply Voltage 90 C L = 1000pF TA = +25°C t D2 TIME (nsec) Rise and Fall Times vs Temperature 40 35 60 50 TIME (nsec) 80 70 60 50 40 C L= 1000 pF VDD = 18V tR 30 25 40 30 20 10 tR tF tF 20 15 t D1 30 10 0 –25 0 5 10 15 SUPPLY VOLTAGE (V) 20 0 5 10 15 SUPPLY VOLTAGE (V) 20 0 25 50 75 100 125 150 TEMPERATURE (°C) Delay Times vs Temperature 100 80 Supply Current vs Capacitive Load 70 SUPPLY CURRENT (mA) Rise and Fall Times vs Capacitive Load 1K 90 DELAY TIME (nsec) C L = 1000pF VDD = 18V tD2 60 TA = +25°C VDD = 18V 400kHz TA = +25°C VDD = 18V 100 TIME (nsec) tR 80 70 60 50 50 40 30 20 10 0 10 100 1000 CAPACITIVE LOAD (pF) 200kHz tF 10 40 30 –25 tD1 20kHz 1 10K 10 0 25 50 75 100 125 150 TEMPERATURE (°C) 100 1000 CAPACITIVE LOAD (pF) 10K Supply Current vs Frequency 30 T = +25°C A CL = 1000pF 2.20 High Output vs Voltage 1.20 TA= +25°C OUTPUT VOLTAGE (V) Low Output vs Voltage TA= +25°C 0.96 VDD = 18V 1.76  VDD – VOUT  (V) VDD = 5V SUPPLY CURRENT (mA) 20 10V VDD = 8V 1.32 13V 0.88 0.72 10V 0.48 10 5V 18V 0.44 15V 0.24 0 1 10 100 FREQUENCY (kHz) 1000 0 10 20 30 40 50 60 70 80 90 100 CURRENT SOURCED (mA) 0 10 20 30 40 50 60 70 80 90 100 CURRENT SUNK (mA) Thermal Derating Curves Supply Voltage vs Quiescent Supply Current 20 NO LOAD BOTH INPUTS LOGIC "1" TA = +25°C 20 Supply Voltage vs Quiescent Supply Current NO LOAD BOTH INPUTS LOGIC "0" TA = +25°C 1600 1400 MAX. POWER (mW) 8 Pin DIP 8 Pin CerDIP SUPPLY VOLTAGE (V) 15 SUPPLY VOLTAGE (V) 15 1200 1000 800 8 Pin SOIC 600 400 200 0 0 10 20 30 40 50 60 70 80 90 100 110 120 10 10 5 5 0 1 2 3 4 5 SUPPLY CURRENT (mA) 6 0 AMBIENT TEMPERATURE (°C) 0 50 100 150 200 250 SUPPLY CURRENT (µA) 300 4-172 TELCOM SEMICONDUCTOR, INC. 1.5A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC426 TC427 TC428 VDD = 18V 1µF 1 VDD = 18V 0.1µF 1µF 0.1µF 2 3 INPUT 1 OUTPUT CL = 1000pF INPUT 1 OUTPUT CL = 1000pF INPUT: 100kHz, square wave, tRISE = tFALL ≤ 10nsec 2 2 INPUT: 100kHz, square wave, tRISE = tFALL ≤ 10nsec TC426 (1/2 TC428) TC427 (1/2 TC428) +5V INPUT 90% +5V INPUT 90% 0V 18V OUTPUT 0V 10% tD1 90% tF tD2 tR 90% 0V 18V 10% 90% tR 10% tD2 90% tF 10% tD1 OUTPUT 0V 4 5 6 10% 10% Test Figure 1. Inverting Driver Switching Time Test Circuit Test Figure 2. Noninverting Driver Switching Time Test Circuit VOLTAGE DOUBLER + 15V 30. 29. 28. VOUT (V) VOUT + – 47µF 0.1µF + – 4.7µF 1N4001 27. 26. 25. 24. 23. 22. 0 6 2 f IN = 10kHz 1/2 TC426 3 – 7 + 10µF 1N4001 10 20 30 40 50 60 70 80 90 100 IOUT (mA) VOLTAGE INVERTER + 15V + 0.1µF – -5 -6 -7 VOUT (V) -8 -9 -10 -11 -12 -13 -14 0 4.7µF 7 6 2 f IN = 10kHz 1/2 TC426 3 + 7 – 10µF 1N4001 – + VOUT 47µF 1N4001 10 20 30 40 50 60 70 80 90 100 IOUT (mA) 8 4-173 TELCOM SEMICONDUCTOR, INC.