BUF744

BUF744 Silicon NPN High Voltage Switching Transistor Features D D D D D D D D D Simple-sWitch-Off Transistor (SWOT) HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature Optimized RBSOA High reverse voltage 14283 Applications Electronic lamp ballast circuits Switch-mode power supplies Absolute Maximum Ratings Tcase = 25°C, unless otherwise specified Parameter Collector-emitter voltage g Test Conditions Symbol VCEO VCEW VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 400 500 700 9 8 12 4 6 50 150 –65 to +150 Unit V V V V A A A A W °C °C Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range Tcase ≤ 25°C Maximum Thermal Resistance Tcase = 25°C, unless otherwise specified Parameter Junction case Test Conditions Symbol RthJC Value 2.5 Unit K/W TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 1 (9) BUF744 Electrical Characteristics Tcase = 25°C, unless otherwise specified Parameter Collector cut-off current Collector-emitter breakdown voltage (figure 1) Emitter-base breakdown voltage Collector-emitter saturation voltage g Base-emitter saturation voltage g DC forward current transfer ratio Test Conditions VCE = 700 V VCE = 700 V; Tcase = 150°C IC = 500 mA; L = 125 mH; Imeasure = 100 mA IE = 1 mA IC = 1.3 A; IB = 0.3 A IC = 4 A; IB = 1.3 A IC = 1.3 A; IB = 0.3 A IC = 4 A; IB = 1.3 A VCE = 2 V; IC = 10 mA VCE = 2 V; IC = 1.3 A VCE = 2 V; IC = 4 A VCE = 5 V; IC = 8 A VS = 50 V; L = 1 mH; IC = 8 A; IB1 = 2.7 A; –IB2 = 0.8 A; –VBB = 5 V IC = 4 A; IB = 0.8 A; t = 1 ms IC = 4 A; IB = 0.8 A; t = 3 ms Symbol ICES ICES V(BR)CEO V(BR)EBO VCEsat VCEsat VBEsat VBEsat hFE hFE hFE hFE VCEW Min Typ Max 50 0.5 Unit mA mA V V V V V V 400 9 0.1 0.2 0.9 1 18 18 0.2 0.4 1 1.2 Collector-emitter working voltage 15 12 6 4 500 V Dynamic saturation voltage y g VCEsatdyn VCEsatdyn 7.5 1.5 15 4 V V 2 (9) TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 BUF744 Switching Characteristics Tcase = 25°C, unless otherwise specified Parameter Test Conditions Resistive load (figure 2) Turn on time IC = 3 A; IB1 = 0.7 A; –IB2 = 1.5 A; ; ; VS = 125 V Storage time Fall time Inductive load (figure 3) Storage time IC = 3 A; IB1 = 0.7 A; –IB2 = 1.5 A; VS = 125 V; Vclamp = 300 V; 125 V; l 300 V; Fall time –VBE = 5 V; L = 200 mH; Tcase = 25°C Storage time IC = 3 A; IB1 = 0.7 A; –IB2 = 1.5 A; VS = 125 V; Vclamp = 300 V; 125 V; l 300 V; Fall time –VBE = 5 V; L = 200 mH; Tcase = 100°C Symbol ton ts tf ts tf ts tf Min Typ 0.85 1 0.15 1.5 0.1 2 0.14 Max 1.2 1.7 0.3 2.5 0.2 Unit ms ms ms ms ms ms ms 94 8863 V S2 + 10 V IB IC w Imeasure IC 5 IC V S1 + 0 to 30 V V(BR)CEO tp T tp 3 Pulses + LC VCE V(BR)CEO + 0.1 + 10 ms I(BR)R 100 mW Figure 1. Test circuit for V(BR)CE0 TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 3 (9) BUF744 94 8852 IB IB1 0 t RC –IB2 IC (1) IB1 RB VBB + VCE IB VCC IC 0.9 IC 0.1 IC tr td ton t ts toff tf (1) Fast electronic switch Figure 2. Test circuit for switching characteristics – resistive load 94 8853 IB IB1 LC 0 –IB2 IC (1) IB1 RB VBB IB VCE Vclamp (2) IC VCC 0.9 IC t + (1) Fast electronic switch (2) Fast recovery rectifier 0.1 IC t ts tr Figure 3. Test circuit for switching characteristics – inductive load 4 (9) TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 BUF744 Typical Characteristics (Tcase = 25_C unless otherwise specified) 100.00 Ptot – Total Power Dissipation ( W ) 8 IC – Collector Current ( A ) 2.5K/W 10.00 12.5K/W 6 1.00 25K/W 50K/W 0.10 RthJA=85K/W 0.01 4 0.1 x IC < IB2 < 0.5 x IC VCESat < 2V 0 0 100 200 300 400 500 600 2 0 13716 25 50 75 100 125 150 95 10558 VCE – Collector Emitter Voltage ( V ) Tcase – Case Temperature ( °C ) Figure 4. VCEW – Diagram 10 Tj = 25°C I - Collector Current (V) 8 1.4A 1A 800mA 6 4 200mA 2 0 0 94 9207 Figure 7. Ptot vs.Tcase - Collector Emitter Saturation Voltage (V) 10 1 2A 3A 5A 600mA 400mA 4A 0.1 IC = 0.75A 1.25A C IB = 50mA 2 4 6 8 10 CEsat 0.01 0.01 0.1 1 10 VCE - Collector Emitter Voltage (V) V 94 9208 IB - Base Current (A) Figure 5. IC vs. VCE 100 - Forward DC Current Transfer Ratio - Forward DC Current Transfer Ratio 100 Figure 8. VCEsat vs. IB Tj = 125°C Tj = 25°C Tj = –25°C 10 VCE = 10V 10 VCE = 5V VCE = 2V FE 1 0.01 0.1 1 10 94 9210 VCE = 2V 1 0.01 h h FE 0.1 1 10 94 9209 IC - Collector Current (A) IC - Collector Current (A) Figure 6. hFE vs. IC Figure 9. hFE vs. IC TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 5 (9) BUF744 10 saturated switching R-load IC = 1.5A, IB1 = 0.3A t f - Fall Time ( m s) 1.0 saturated switching R-load IC = 1.5A, IB1 = 0.3A 8 ts - Storage Time ( m s) 0.8 0.6 Tj = 125°C 6 Tj = 125°C 4 0.4 2 0 0 94 9215 0.2 Tj = 25°C 0 1 2 –IB2 / IB1 3 4 94 9216 Tj = 25°C 0 1 2 –IB2 / IB1 3 4 Figure 10. ts vs. –IB2/IB1 10 saturated switching R-load IC = 3A, IB1 = 0.6A t f - Fall Time ( m s) 1.0 Figure 13. tf vs. –IB2/IB1 8 ts - Storage Time ( m s) 0.8 0.6 Tj = 125°C saturated switching R-load IC = 3A, IB1 = 0.6A 6 Tj = 125°C 4 0.4 2 Tj = 25°C 0 0 94 9211 0.2 0 1 2 –IB2 / IB1 3 4 94 9214 Tj = 25°C 0 1 2 –IB2 / IB1 3 4 Figure 11. ts vs. –IB2/IB1 10 unsaturated (Baker clamp) R-load IC = 3A, IB1 = 0.6A t f - Fall Time ( m s) 1.0 Figure 14. tf vs. –IB2/IB1 8 ts - Storage Time ( m s) 0.8 0.6 unsaturated (Baker clamp) R-load IC = 3A, IB1 = 0.6A 6 4 Tj = 125°C 2 0 Tj = 25°C 0 1 2 –IB2 / IB1 3 4 0.4 Tj = 125°C 0.2 0 0 1 2 –IB2 / IB1 3 4 Tj = 25°C 94 9213 94 9212 Figure 12. ts vs. –IB2/IB1 Figure 15. tf vs. –IB2/IB1 6 (9) TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 BUF744 0.5 saturated switching L–load IC = 1.5A, IB1 = 0.3A 0.4 t f - Fall Time ( m s) 0.3 Tj = 125°C Tj = 25°C 0.2 0.1 0 0 94 9218 1 2 –IB2 / IB1 3 4 Figure 16. tf vs. –IB2/IB1 TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 7 (9) BUF744 Dimensions in mm 14277 8 (9) TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 BUF744 Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97 9 (9)