U2510B-M

U2510B All-Band AM/FM Receiver and Audio Amplifier Description The U2510B is an integrated bipolar one-chip AM/FM radio circuit. It contains an FM front end with preamplifier, FM IF and demodulator, a complete AM receiver, an AF amplifier and a mode switch for AM, FM and tape. This circuit is designed for clock radios and portable radio-cassette recorders. Features D Superior FM strong signal behavior by using RF AGC D Soft mute and HCC for decreasing interstation noise in FM mode D Excellent AFC performance (level controlled, both polarities available) D Level indicator (LED drive) for AM and FM D D D D D D DC mode control: AM, FM and tape Wide supply-voltage range and low quiescent current High AF output power: 1 W Electronic volume control Electronic AF bandwidth control (treble and high cut) Output stage for headphone and speaker drive Block Diagram FM RF tank FM ant. VS 9 8 7 AFC FM RF BPE AGC 12 FM front end FM AGC AM front end RF AGC Voltage stab. AM/FM and mode control 15 21 13 20 19 1 22 IF AGC AM AGC AFC control AM IF amp. and detect. IF Level indic. AF preamp. Volume Mute HCC 18 FM IF amp. FM discr. Power amp. 25 23 24 4 6 14 16 2 26 28 27 3 FM osc. tank IF BPE (Replaceable) 11 AM ant. AM osc. tank 10 5 VRef AM S2 VS AFC mode LED VS Treble Vol 13912 FM Tape Figure 1. Block diagram TEMIC Semiconductor Rev. A1, 06-Apr-98 1 (15) U2510B Order Information Extended Type Number U2510B-M U2510B-M__T Package SDIP28 SDIP28 Pin 5 28 AF-GND 6 Remarks VS < 6 V supply voltage Function AM oscillator tank circuit input, recommended load impedance approximately 2.5 kW FM–AFC AFC diode connection, coupling capacitor (C19) determines the AFC characteristic (holding range and slope) FMOsc FM oscillator tank circuit input, recommended load impedance approximately 3 kW VRef Regulated voltage output (2.4 V) FMtank FM RF tank circuit connection, recommended load impedance approximately 3 kW AMtank AM RF tank circuit connection, recommended load impedance approximately 20 kW FM-AGC FM AGC voltage output, time constant (C20). Loading this pin by a resistor (to GND) will increase the FM AGC threshold, grounding this pin will switch off the FM AGC function FMin FM RF input (common-base preamplifier transistor), recommended (RF) source impedance approximately 100 W FE-GND FM front-end ground AM/FM AM/FM IF output IFout (collector output of the IF preamplifier) Mode ctrl Mode control input: switch Pin | Function open | FM Ground | AM VS (R4 = 10 kW) | Tape AM-IFin AM IF input, input impedance = 3.1 kW FM-IFin FM IF input, input impedance = 330 W VTreble in Treble control voltage input LED drive Level indicator output (open-collector output, LED drive) IF-GND IF ground AFC switch AFC function control input: Pin | Function open | AFC off Ground | fOSC > fin VS | fOSC < fin VAGC/AFC AGC/AFC voltage, time constant adjust (C10), input impedance approximately 42 kW AM/FM AM/FM detector output, the load capacitor detect (C11) in conjunction with the detector output resistance (7.5 kW) determines the (FM) deemphasis as well as the (modulation) frequency response of the AM detector AFin Audio amplifier input, input resistance approximately 100 kW, coupling capacitor (C9) determines the low frequency response Ripple in Ripple filter connection. Load capacitance (C12) determines the frequency response of the supply-voltage ripple rejection VS Supply voltage input AFout Audio amplifier output AF-GND Ground of the audio power stage Symbol AMOsc Pin Description Mute 1 FM-discr 2 27 AFout 7 8 9 10 11 CF 3 26 VS Ripple in Vol ctrl in 4 25 AMOsc 5 24 AFin 12 FM-AFC FMOsc 6 23 AM/FM detect 7 22 VAGC/AFC 13 14 15 VRef FMtank 8 21 AFC switch 9 20 IF-GND 16 17 18 19 20 21 AMtank 10 19 LED drive FM-AGC FMin 11 18 VTreble in FM-IFin 12 17 FE-GND AM/FM IFout 13 16 AM-IFin Mode ctrl switch 22 23 14 14812 15 Figure 2. Pinning Pin 1 Symbol Mute Function Mute voltage output, time constant (C23), mute depth and threshold adjustable by load resistance (R3) FM discriminator filter connection, ceramic resonator or equivalent LC-circuit Audio negative feedback input. Blocking capacitor (C8) determines the audio amplifiers low-end cut-off frequency Input for volume control voltage 24 2 3 FM-discr CF 25 4 Vol ctrl in 26 27 28 2 (15) TEMIC Semiconductor Rev. A1, 06-Apr-98 U2510B Terminal Voltages Test circuit: Vin = 0 Voltage/V Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Mute voltage (R3 = 0) FM discriminator Negative feedback Volume control input (S4 = A) AM oscillator FM AFC FM oscillator VRef FM RF tank AM input FM AGC FM input Front end ground AM/FM IF output Mode control switch AM IF input FM IF input Treble control input (S5 = A) LED IF ground AFC switch (S3 = off) AGC (AM)/AFC (FM) Detector output AF input Ripple filter Supply voltage AF output AF ground Symbol V1 V2 V3 V4 V5 V6 V7 V8 V9 V10 V11 V12 V13 V14 V15 V16 V17 V18 V19 V20 V21 V22 V23 V24 V25 V26 V27 V28 AM – – 1.2 2.4 2.4 – – 2.4 – 2.4 – VS = 3 V FM 1.6 1.0 1.2 2.4 – 1.9 2.4 2.4 2.4 – 0 1.4 – – 2.9 2.7 0 – 0 – – 0.7 2.4 2.4 0 1.2 1.5 1.5 1.5 2.7 3.0 1.2 0 0 1.2 1.2 1.2 1.5 2.7 3.0 1.2 0 TAPE – – 1.2 2.4 – – – 2.4 2.4 – – – – – 2.9 – – 2.4 0 1.2 – – 1.5 2.7 3.0 1.2 0 AM – – 2.6 2.4 2.4 – – 2.4 – – – – – 5.9 0 0 – 2.4 0 1.2 1.5 1.5 1.5 5.3 6.0 2.6 0 VS = 6 V FM 1.6 1.0 2.6 2.4 – 1.9 2.4 2.4 2.4 2.4 0 1.4 – 5.7 – – 0.7 2.4 0 1.2 1.2 1.2 1.5 5.3 6.0 2.6 0 TAPE – – 2.6 2.4 – – – 2.4 – – – – – – 5.7 – – 2.4 0 1.2 – – 1.5 5.3 6.0 2.6 0 TEMIC Semiconductor Rev. A1, 06-Apr-98 3 (15) U2510B Absolute Maximum Ratings Parameters Supply voltage Power dissipation Ambient temperature range Symbol VS Ptot Tamb Value 13 900 –20 to +75 Unit V mW °C Electrical Characteristics VS = 6 V, Tamb = 25°C, test circuit (figure 16), unless otherwise specified Parameters Supply voltage range Oscillator stop voltage Operating temperature range Supply quiescent current Test Conditions / Pins Symbol VS VS T Min. 2.5 2.2 –20 Typ. Max. 9* +75 4.0 6.5 2.2 2.4 Unit V V °C mA mA mA V kW dB mV kHz kHz Vi1 = Vi2 = V4 = 0; AM (S2 = AM) IS IS FM (S2 = FM) TAPE (S2 = Tape) IS Regulated voltage Pin 8 VRef Audio amplifier Vi3 (Pin 24), test point: Vo (Pin 27) f = 1 kHz AF measuring range: 30 Hz to 20 kHz, S2 = Tape, S4 = A, S5 = A Input resistance Pin 24 Rj Closed loop voltage gain GVaf1 = 20 log (Vo/Vi3) Vi3 = 10 mV GVaf1 Output voltage Vi3 = 100 mV, S4 = B Vo High–end cut-off frequency fc (–3 dB) fc S5 = B fc Supply-voltage rejection ratio SVRR = 20 log (Vhum/Vo) Vhum = 200 mV, fhum = 200 Hz, S4 = B SVRR Noise voltage S4 = B, Vi3 = 0 Vn AF output power THD = 10 %, RL = 8 W VS = 4.5 V Po VS = 6.0 V Po VS = 9.0 V Po Distortion Po = 50 mW, RL = 8 W d 100 40 0.7 13 0.8 3 32 300 225 420 1000 0.6 1000 dB mV mW mW mW % 400 FM section, Vi2 = 60 dBmV, fi2 = 98 MHz, fm = 1 kHz, dev. = 22.5 kHz, fiIF = 10.7 MHz, AF measuring range: 300 Hz to 20 kHz, S2 = FM, S1 = A, S6 = B, test point: VD (Pin 23) FM front-end voltage gain GVFM = 20 log (ViIF / Vi2) S1 = B, Vi2 = 40 dbmV GVFM 30 Recovered audio voltage Pin 23 VD af 85 Detector output resistance Pin 23 RDo 7.5 Detector output distortion dev. = 75 kHz THD 0.5 Vi2 = 60 dBmV THD 0.8 Vi2 = 105 dBmV " " dB mV kW % % * U2510B-M__T: max. 6 V 4 (15) TEMIC Semiconductor Rev. A1, 06-Apr-98 U2510B Electrical Characteristics (continued) VS = 6 V, Tamb = 25°C, test circuit (figure 16), unless otherwise specified Parameters AM rejection ratio RF sensitivity Limiting threshold (-3 dB) Mute voltage Test Conditions / Pins m = 30% (S+N)/N = 26 dB (S+N)/N = 46 dB Test point: Mute Vi2 = 0 Vi2 = 60 dBmV Referred to V0 at Vi2 = 0 S6 = A S6 = C fOSC > fin, S3 = A, S6 = A Vi2 10 dBmV Vi2 = 20 dBmV Vi2 = 80 dBmV Symbol AMRR Vi2 Vi2 Vi2 Vmute Vmute MD MD FHR FHR FHR Min. Typ. 25 9 22 3 1.8 0.4 26 20 no AFC 180 220 5.5 180 Max. Unit dB dBmV dBmV dBmV V V dB dB Mute depth AFC holding range x LED current ILED Oscillator voltage eZload = 2.5 kW Pin 7 VOSC AM section Vi1 = 60 dBmV, fi1 = 1.6 MHz, fm = 1 kHz, m = 30%, fiIF = 455 kHz, AF measuring range: 300 Hz to 20 kHz, (S2 = AM, S1 = B, test point: VD) AM front end voltage gain GVAM = 20 log (ViIF/Vi1) GVAM Vi1 = 20 dBmV, S1 = A Recovered audio voltage VD af1 Detector output resistance Pin 23 RDo Detector output distortion Vi1 = 60 dBmV THD Vi1 = 105 dBmV THD RF sensitivity (S+N)/N= 10 dB Vi1 (S+N)/N= 26 dB Vi1 (S+N)/N= 46 dB Vi1 AGC figure of merit referred Vi1 = 105 dBmV, voltage to VD af drop (VD af) = –10 dB FOM IF input resistance Pin 16 Zi LED current ILED Oscillator voltage Pin 5 VOSC " " kHz kHz mA mV 25 70 7.5 1 3 0 16 35 100 3.1 5.5 160 dB mV kW % % dBmV dBmV dBmV dB kW mA mV TEMIC Semiconductor Rev. A1, 06-Apr-98 5 (15) U2510B 10 Tamb=25°C 8 1000 6 AM 4 Tape 2 0 2 9510396 10000 FM Po ( mW ) IS ( mA ) RL=4W 100 8W f=1kHz d=10% Tamb=25°C 16W 32W 10 4 6 8 VS ( V ) 10 12 9510399 0 10 VS ( V ) 50 Figure 3. Quiescent current 50 40 VU ( dB ) without treble control Figure 6. AF section: Max. output power 40 32 30 with treble control 20 10 0 0.01 95 10397 f=200Hz Po ( mW ) f=100Hz 24 Vhum=200mV VS=6V RL=8W Tamb=25°C 2 4 6 8 VS ( V ) 10 12 Vi=5mV VS=6V RL=8W Tamb=25°C 0.1 1 f ( kHz ) 10 100 95 10400 16 Figure 4. AF section 10 f=1kHz Tamb=25°C 8 Figure 7. AF section: Supply-voltage rejection ratio 2.0 VS=6V Tamb=25°C 1.6 Vo ( dBV ) R3=∞ 1.2 100kW 0.8 0.4 0 –20 95 10403 d(%) 6 VS=3V RL=32W VS=6V RL=8W VS=9V RL=8W 4 2 0 1 95 10398 68kW 10 100 Po ( mW ) 1000 10000 0 20 40 Vi ( dBmV ) 60 80 100 120 Figure 5. AF section: Distortion Figure 8. FM section: Mute voltage 6 (15) TEMIC Semiconductor Rev. A1, 06-Apr-98 U2510B 0 S+N(m=80%) –20 S+N(m=30%) –40 N VS=6V fi1=1.6MHz fAF=1kHz Tamb=25°C I LED ( mA ) VD ( dBV ) 5 4 3 2 1 d(m=80%) –100 –20 95 10404 6 AM FM ILED –60 –80 d(m=30%) 0 40 60 80 100 120 95 10407 VS=6V Tamb=25°C 0 20 40 60 80 100 120 0 20 Vi ( dBmV ) Vi ( dBmV ) Figure 9. AM section: Demodulator output level 0 VS=6V Vi3=10mV fAF=1MHz fAF=10kHz Tamb=25°C Treble Voltage V8 Figure 11. AM/FM level indicator current 2.0 –20 VO ( dBV ) 1.2 VAGC ( V ) –40 0.8 VS=6V fi1=1.6MHz Tamb=25°C –60 Treble Voltage = 0 –80 0 95 10406 0.4 0 0.5 1 1.5 V4 ( V ) 2 2.5 95 10408 20 0 20 40 60 80 100 120 Vi ( dBmV ) Figure 10. Volume control range characteristics Figure 12. AM section: AGC voltage (at Pin 22) TEMIC Semiconductor Rev. A1, 06-Apr-98 7 (15) U2510B 0 S+N(Df= "75kHz) "22.5kHz) VS = 6 V fi2 = 98 MHz fAF = 1 kHz Tamb = 25°C –20 VD ( dBV ) S+N(Df= –40 AM(m=30%) –60 –80 –100 –20 d(Df= d(Df= 0 20 40 60 80 100 120 N "75kHz) "22.5kHz) 95 10401 Vi ( dBmV ) Figure 13. FM section: Demodulator output level 0 68kW 100kW Vo ( dBV ) R3=0 –20 ∞ –40 AM S+N VS = 6 V RL = 8 W Po = 50 mW at Vi2 = 60 dBmV fi2 = 98 MHz fAF = 1 kHz Df = 22.5 kHz mAM = 30% Tamb = 25°C –60 N –80 d –100 –20 0 20 40 60 80 100 120 Vi ( dBmV ) " 95 10402 Figure 14. FM section: Audio output level 0 S+N –20 VO ( dBV ) –40 N d –60 –80 –100 –20 Po = 50 mW at Vi1 = 60 dBmV RL = 8 W fi1 = 98 MHz fAF = 1 kHz m = 80% Tamb = 25°C 100 120 0 20 40 60 80 95 10405 Vi ( dBmV ) Figure 15. AM section: Audio output level 8 (15) TEMIC Semiconductor Rev. A1, 06-Apr-98 U2510B Test Circuit R5 150 Ω Vi1 (50 Ω) Vi2 (50 Ω) R6 C24 LA 150 µH C2 43 pF C3 22 pF L1 L2 C4 18 pF R4 2.2 kΩ T2 C5 22 pF A S4 B A S5 B 100 Ω 100 nF C25 R 7 C7 C6 C19 5.6 pF T4 C25 100 pF C8 4.7 µF C24 18 pF 2 1 R8 50 Ω 75 Ω R3 150 kΩ C23 68 nF C S6 10 nF 4.7 µF 22 nF B A Vmute C20 22 nF AM IFT T1 455 kHz CF1 14 13 12 11 10 9 8 7 6 5 4 3 U2510B 15 BA S1 B 16 A CF2 10.7 MHz R1 390 Ω R2 10 kΩ C14 C10 C11 10 nF C12 C13 RL 8 Ω/ 2W Vo GND 13913 17 18 19 C22 20 21 22 23 C9 24 25 26 27 28 A S3 B 10 nF C15 220 µF D1 10 nF off LED ViIF R9 3 kΩ C21 Tape S2 FM AM 100 nF 10 µF 10 µF 470 µF 10 nF ILED VD Vi3 VS Figure 16. Test circuit Application General The U2510B is a bipolar monolithic IC for use in radio sets, for example, headphone receivers, radio recorders and clock radios. The IC contains all AM, FM, AF and switching function blocks necessary to construct these kinds of radio receivers using only few components around the IC. In the design, special efforts were made to get good performance for all AM bands (short and long wave). The implementation of enhanced functions (options) makes it possible to improve the radio’s performance and to produce radios with interesting features. In this case few (external) parts have to be changed or added. By using all or some of the options offered by the U2510B different types or classes of radios can be designed to the customer’s requirements with the same IC. One of the general advantages of using the U2510B is the fact that all receiver functions (including the options) are integrated and tested on a system level. Therefore, two additional cost-savings are achieved by: 1. Shorter development time through less technical problems and 2. Higher reproductivity and low reject level in the set production line. Another advantage, due to the technology of the U2510B, is the wide operating voltage range, especially the upper limit (13 V). This feature allows the use of soft power supply for line powered radios which can also reduce the set’s total cost. TEMIC Semiconductor Rev. A1, 06-Apr-98 9 (15) U2510B Circuit Example Figure 17 shows a circuit diagram for low end AM/AF radios using the U2510B. Figure 18 shows a circuit diagram of AM/AF radio for higher class designs using all possible options of the U2510B. The layout of the PC board, shown in figure 19, is suitable for both the circuit example shown in figure 17 and the circuit example shown in figure 18. The associated coil, varicon and filter specifications are listed in the table: COIL DATA and SPECIAL COMPONENT PARTS. The circuit diagram (figure 18), has the following options compared to the circuit diagram (figure 17) (the additional parts, which have to be provided, are listed in parentheses): a) Soft mute and high cut control in FM mode (1 cap.) b) Electronic treble control in AM, FM and TAPE mode (1 pot.) c) On-chip mode control for TAPE application d) RF AGC in FM mode (1 capacitor) e) AFC, adjustable to the correct polarity and slope (1 cap.) f) Tuning indication using LED as an indicator (1 LED, 1 cap.) Option a) reduces the interstation noise by the two functions: soft mute and HCC. Both are controlled by the mute voltage (Pin 1). The soft mute reduces the loudness only, while the HCC reduces the high-end audio cut-off frequency of the audio preamplifier, when the signal level falls below a given threshold. This signal level threshold as well as the mute depth can be reduced by adding a resistor (R3) or by increasing the FM front–end gain. Option b) allows the treble control for all operating modes without the need of an additional capacitor. This concept leads to a smooth and correct treble control behavior which is an improvement compared to the controlled RC network normally used. Option c) is very useful for application in radio cassette-recorders, for instance. In TAPE mode, the AM/FM receiver blocks are completely switched off and the signal from the tape recorder can be fed to the audio amplifier’s input directly. This saves quiescent current and makes the TAPE switching easy. However, to minimize switching noise by the mode switch, the following switch sequence should be chosen: AM, FM, TAPE. Option d) improves the strong signal behavior by protecting the FM mixer against overload. This is provided by the integrated broad-band-width RF AGC. If necessary, the AGC threshold can be decreased by a resistor, loading Pin 11 to GND (not shown). Option e) improves the tuning behavior substantially. The special design of the on-chip AFC function means that common disadvantages such as asymmetrical slope, (chip-) temperature effects and unlimited holding range are avoided. As mentioned in the “Pinning Description Table”, the AFC slope has to be inverted when the local oscillator (LO) frequency has to be below the receiving frequency. This can be achieved by connecting Pin 21 to the potential of Pin 8. In addition to the options described above, the following proposals are implemented in the circuit diagram (figure 18), too: D An FM IFT is applied. This improves the channel selectivity and minimizes substantially the spurious responses caused by the FM ceramic filter (CF2). With the choice of the winding ratio of this IFT, the FM front end gain can be matched to other values if necessary. D In the FM RF input section, the low cost antenna filter (L5, C15) is replaced by a special band pass filter (PFWE8). Such a BPF protects the FM front end against the out-off-band interference signals (TV channels, etc.) which could disturb the FM reception. Design Hints The value of the power supply blocking capacitor C13 should not be below 470 mF. In addition, this capacitor should be placed near Pin 26. This will help to avoid unacceptable noise generated by noise-radiation from the audio amplifier via the bar-antenna. In designs, where the supply voltage goes below 2.5 V, the value of the blocking capacitor (C7) should be chosen as 47 mF or even higher. To achieve a high rejection of short wave reception in medium wave operation, the LO amplitude at Pin 5 should not exceed approximately 200 mV. This LO amplitude depends on the LO transformer’s Q and its turns ratio. For the LO transformer type described in the “Coil Data Table”, a resistor R4 (2.2 kW for example) in parallel to the secondary side of the AM LO transformer T2 is recommended. To minimize feedback effects in the RF/IF part in FM mode, the capacitor C6 should be placed as near to Pins 8 and 20 as possible. As shown in the application circuit diagrams (figures 17 and 18), in FM mode ceramic filter devices are used for channel selection (CF2) while for FM, demodulation in LC-discriminator circuit (T4, C24, C25) is used instead of a ceramic discriminator device. Such an LC discriminator circuit can be easily matched to the FM IF selectivity block by its alignment. The zerocrossing of the discriminator can be detected at the demodulator output (Pin 23). The zero-crossing voltage is equal to half of the regulated voltage at Pin 8. 10 (15) TEMIC Semiconductor Rev. A1, 06-Apr-98 U2510B The alignment of the LC-discriminator circuit should be done with little or no effect on the AFC function. This can be realized by: – switching Pin 21 to open-circuit – connecting Pin 1 to a voltage source of 2 V – using a low signal level for alignment. In general, ceramic discriminator devices can be used, too. In this case, the effect of unavoidable spreads in the frequency characteristics of these case ceramic devices in conjunction with the IC characteristic has to be considered. For example, mismatches of the characteristics between selectivity block and FM discriminator will lead to an increased signal-to-noise ratio at low signal level as well as to a higher demodulation distortion level or to an asymmetrical AFC. Application Circuits Antenna FM AM L3 C16 33 pF C18 33 pF C17 33 pF L4 C7 C6 T4 C25 100 pF C2 2 pF C3 22 pF L1 L2 C4 27 pF T2 C5 6 pF Volume P1 50 kΩ 4.7 µF 22 nF C8 4.7 µF AM IFT T1 455 kHz CF1 14 13 12 11 10 9 8 7 6 5 4 3 C24 18 pF 2 1 U2510B 15 16 CF2 10.7 MHz R1 390 Ω 10 nF 100 nF C14 S2 C10 AM FM 4.7 µF 10 nF 4.7 µF 470 µF C11 C12 C13 17 18 19 20 21 22 23 C9 C15 220 µF S1 24 25 26 27 28 VS Z=8Ω 13915 Figure 17. Application circuit (low cost) TEMIC Semiconductor Rev. A1, 06-Apr-98 11 (15) U2510B Antenna FM AM L3 C2 2 pF C3 22 pF L1 L2 C4 27 pF T2 C5 6 pF P1 50 kΩ P2 50 kΩ Volume Treble BPF 1 R4 2.2 kΩ C7 C6 T4 C25 100 pF C23 C19 5.6 pF C8 4.7 µF 5 4 3 C24 18 pF 2 (R3) 68 nF 1 Mute Adj. 4.7 µF 22 nF C20 22 pF AM IFT T1 455 kHz CF1 14 13 12 11 10 9 8 7 6 U2510B AM IFT T3 15 16 CF2 10.7 MHz 100 pF D1 R2 Tape FM S2 AM C21 10 nF IN Tape 13914 17 18 19 C22 20 21 22 23 C9 22 nF 24 25 26 27 28 10 nF LED 100 nF C14 C10 10 µF C11 10 nF C12 C13 C15 220 µF S1 VS 10 kΩ 4.7 µF 470 µF Figure 18. Application circuit (upgraded) R2 only if VS > 8 V Figure 19. PC-board 12 (15) TEMIC Semiconductor Rev. A1, 06-Apr-98 U2510B Coil Data and Special Component Part Part Stage L or C0 between 180 pF 1 to 3 Q0 between Wire diameter/mm Terminal No. Number of turns 0.07 2 to 3 35 0.06 4 to 6 29 0.09 2 to 3 7 0.09 4 to 6 2 Type Manufacturer 0.07 4 to 6 7 7MC-7789N Toko 21K7-H5 Mitsumi 7TRS-8441 Toko L-5K7-H5 Mitsumi mat.: 7P A119 AC Toko mat.: 7P A119 AC Toko T1 AM IFT 90 1 to 3 0.07 1 to 2 111 0.06 1 to 3 107 0.09 1 to 2 3 0.09 1 to 3 10 0.62 3.75 0.62 3.75 0.62 4.75 T2 AM OSC 270 mH 1 to 3 125 1 to 3 T3 FM IFT (optional) FM discriminator FM RF air coil 4 mm diam. FM OSC air coil 4 mm diam. FM antenna air coil 4 mm diam. 100 pF 1 to 3 100 pF 1 to 3 T4 L1 L2 L4 L3 BPF1 CF1 CF2 CF3 C1 AM bar antenna (optional) (optional) Variable capacitor 4 mm 3 2 4 6 4 L: 630 mH total turns : 96 tap: 19 PFWE8 (88 to 108 MHz) Soshin Electric Co. SFU-455B Murata BFCFL-455 Toko SFE10.7MA5 Murata CFSK 107M1 Toko CDA10.7MC1 Murata HD22124 AM/FM Toko 3 mm 80 mm 18 mm C1 Pin 10 Pin 8 13931 Coil, bottom view Air coil Figure 20. AM bar antenna TEMIC Semiconductor Rev. A1, 06-Apr-98 13 (15) U2510B Package Information Package SDIP28 Dimensions in mm 27.5 27.1 10.26 10.06 4.8 4.2 0.9 3.3 0.53 0.43 23.114 1.778 0.35 0.25 12.2 11.0 8.7 8.5 1 technical drawings according to DIN specifications 13044 14 (15) TEMIC Semiconductor Rev. A1, 06-Apr-98 U2510B Ozone Depleting Substances Policy Statement It is the policy of TEMIC Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC Semiconductor GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 TEMIC Semiconductor Rev. A1, 06-Apr-98 15 (15)