U6047B

U6046B / U6047B Rear Window Heating Timer Description The window heating timers are bipolar integrated circuits. Due to time controlled functions, they reduce the current consumptions of high loads i.e., heating resistors. An ON-relay can be switched off after a preset delay time. The relay time can be interrupted manually, whereas a retrigger function is not provided. Features D D D D D Delay time range: 3.7 s to 20 h RC oscillator determines switching characteristics Relay driver with Z-diode Debounced input for toggle switch Two debounced inputs: ON and OFF D D D D D Load-dump protection RF interference protected Protection according to ISO/TR7637-1 (VDE 0839) U6046B: Inputs switched to VBatt U6047B: Inputs switched to ground Ordering Information Extended Type Number U6046B, U6047B U6046B–FP, U6047B–FP Package DIP8 SO8 Remarks Block Diagram C2 R2 6 Vstab 7 47 mF C1 R1 510 W VBatt OSC VS 8 Oscillator Stabilization Power-on reset Load-dump detection 1 GND Frequency divider 3 ON 4 OFF 5 TOGGLE 94 8747 Debouncing Monoflop Relay control output 2 Figure 1. Block diagram with external circuit TELEFUNKEN Semiconductors Rev. A2, 03-Feb-97 1 (11) U6046B / U6047B Pin Configuration Pin 1 2 3 4 5 6 7 8 Symbol GND RELAY ON OFF TOGGLE OSC Vstab VS Function Reference point, ground Relay control output Switch-on input Switch-off input Toggle input RC oscillator input Stabilized voltage Supply voltage GND RELAY 1 8 VS Vstab OSC TOGGLE 2 7 ON OFF 3 6 4 94 8844 5 Figure 2. Pinning Functional Description Power Supply, Pin 8 For reasons of interference protection and surge immunity, the supply voltage (Pin 8) must be provided with an RC circuit as shown in figure 3. Dropper resistor, R1, limits the current in case of overvoltage, whereas C1 smoothes the supply voltage at Pin 8. Recommended values are: R1 = 510 W, C1 = 47 mF. The integrated Z-diode (14 V) protects the supply voltage,VS. Therefore, the operation of the IC is possible between 6 V and 16 V, supplied by VBatt. However, it is possible to operate the integrated circuit with a 5 V supply, but it should be free of interference voltages. In this case, Pin 7 is connected to Pin 8 as shown in figure 4, and the R1C1 circuit is omitted. VBatt R1 C1 47 mF/ 16 V 510 W R2 C2 VS = 5 V R2 C2 8 7 6 5 VBatt 8 7 6 5 U6046B U6047B 1 2 U6046B U6047B 1 2 3 4 3 4 94 8749 94 8750 Figure 3. Basic circuit for 12 V supply and oscillator Figure 4. Basic circuit for VS = 5 V 2 (11) TELEFUNKEN Semiconductors Rev. A2, 03-Feb-97 U6046B / U6047B Oscillator, Pin 6 Oscillator frequency, f, is determined mainly by the R2C2 circuit. Resistance, R2, determines the charge time, and the integrated resistance (2 kW) is responsible for discharge time. For the stability of the oscillator frequency, it is recommended that the selected R2 value be much greater than the internal resistance (2 kW) because the temperature response and the tolerances of the integrated resistance are considerably greater than the external resistance value. Oscillator frequency, f, is calculated as follows: f Relay Control Output The relay control output is an open collector Darlington circuit with an integrated 23-V Z-diode for limitation of the inductive cut-off pulse of the relay coil. The maximum static collector current must not exceed 300 mA and saturation voltage is typically 1.1 V @ 200 mA. Interference Voltages and Load-Dump The lC supply is protected by R1, C1, and an integrated Z-diode, while the inputs are protected by a series resistor, integrated Z-diode and RF capacitor (refer to Figures 10 and 11). The relay control output is protected via the integrated 23-V Z-diode in the case of short interference peaks. It is switched to conductive condition for a battery voltage of greater than approx. 40 V in the case of load-dump. The output transistor is dimensioned so that it can withstand the current produced. +t )t 1 1 2 a1 and a2 are constants as such a1 = 0.833 and a2 = 1.551 when C2 = 470 pF to 10 nF a1 = 0.746 and a2 = 1.284 when C2 = 10 nF to 4700 nF The debounce time, t3, and the delay time, td, depend on the oscillator frequency, f, as follows: t3 td where t1 = charge time = a1 R2 C2 t2 = discharge time = a2 2 kW C2 +6 1 f + 73728 Power-on Reset When the operating voltage is switched on, an internal power-on reset pulse (POR) is generated which sets the logic of the circuits to a defined initial condition. The relay output is disabled. 1 f Table 1 shows relationships between t3, td, C2, R2 and frequencies from 1 Hz to 20 kHz. VBatt R1 C1 47 mF/ 16 V 8 510 W C2 R2 S1 20 kW 6 5 VBatt R1 C1 47 mF/ 16 V 510 W C2 R2 S1 2 kW 6 5 7 8 7 U6046B 1 U6047B 1 2 3 4 2 3 4 94 8752 94 8751 Figure 5. TOGGLE function U6046B Figure 6. TOGGLE function U6047B TELEFUNKEN Semiconductors Rev. A2, 03-Feb-97 3 (11) U6046B / U6047B Relay Control Output Behavior, Pin 2 Time functions (relay output) can be started or interrupted by the three inputs i.e., ON, OFF or TOGGLE (Pins 3, 4 and 5). The relay becomes active if the time function is triggered, and the relay contact is interrupted after the elapse of delay time, td. There are two input possibilities: whereas the switching of the Pin 4 switch correspondingly leads to the relay being de-energized. If the relay is not de-energized by the push-button switch, it becomes disabled after the delay time, td, is over. Combined operation, “TOGGLE and ON/OFF” is not possible due to the fact that there is only one debouncing circuit. Debouncing functions on both sides i.e., whenever S1 is ON or OFF. If Pin 3 (input ON) is continuously closed, the delay time, td, still elapses and the relay is interrupted. This can be used to generate a defined power-on-reset pulse to trigger, for example, a delay time, td, when the battery voltage, VBatt, is applied. Figure 10 shows the input circuit of U6046B. It has an integrated pull-down resistance (20 kW), RF capacitor (15 pF) and Z-diode (7 V). It reacts to voltages greater than 2 V. The external protective resistor has a value of 20 kW and the push-button switch, S, is connected to the battery as shown in the diagram. Contact current, I, is calculated as follows: I I V –V + R(+ 20 kW) Batt Z Toggle Input, Figures 5 and 6 When the push-button (TOGGLE) switch, S1, is pressed for the first time, the relay becomes active after the debounce time, t3, i.e., the relay output, Pin 2, is active. Renewed operation of S1 causes the interruption of the relay contact and the relay is disabled. Each operation of the toggle switch, S1, changes (alters) the condition of the relay output when the debounce time, t3, is exceeded i.e., the TOGGLE function. If the relay output is not disabled by pressing the switch S1, the output is active until the delay time, td, is over. ON, OFF Inputs, Pins 3 and 4, Figures 7 and 8 To avoid simultaneous operation of both inputs, Pin 3 (ON) and Pin 4 (OFF), use of two-way contact with centre-off position with spring returns (also known as rocker-actuated switch) is recommended. Pressing the push-button switch (Pin 3-ON) leads to the activation of the relay after the debounce time, t3, where V Batt + 12 V, VZ +7 V It can be increased by connecting a 5.6 kW resistor from the push-button switch to ground as shown in figure 18. + (12–7)WV [ 0.25 mA 20 k VBatt VBatt R1 C1 47 mF/ 16 V 8 S3 510 W R2 C2 C1 20 kW 20 kW 47 mF/ 16 V R1 510 W R2 C2 8 7 6 5 7 6 5 U6047B U6046B 1 1 2 3 4 2 kW 94 8753 2 3 4 2 kW S3 94 8754 Figure 7. ON/OFF function U6046B Figure 8. ON/OFF function U6047B 4 (11) TELEFUNKEN Semiconductors Rev. A2, 03-Feb-97 U6046B / U6047B Figure 11 shows the input circuit of U6047B. It has an integrated pull-up resistance (100 kW), RF capacitor (15 PF) and Z-diode (7 V). The circuit reacts to voltages less than 2 V. The external protective resistance has a value of 2 kW and the push-button switch is connected to GND. Contact current, I, is calculated as follows: VS when VBatt 12 V I (100 kW 2 kW) It can be increased by connecting a 5.6 kW resistor from the push-button-switch to VBatt as shown in figure 19. The connecting diodes prevent the current flow to the input of the Z-diodes when the rocker actuated-switch is in open-state (current-consumption only in standby-mode). If necessary, these diodes can be omitted. [ ) I [ 0.1 mA + Timing Waveform Diagram 5A Toggle Relay Pin 5 t3 t3 Diagram 5B Pin 2 t3 t3 t3 t3 t3 td ON OFF Pin 3 t3 t3 Pin 4 Relay Pin 2 t3 Diagram 5C t3 t3 t3 t3 t3 td Pin 3 ON OFF Relay Pin 4 Pin 2 94 8755 td t3 Figure 9. Behavior of the relay control output as a function of input condition 2V VBatt S R 20 kW 7V 15 pF Pin 3,4,5 – + 20 kW 94 8756 VS 100 kW Pin 3,4,5 2 kW 2V – + 15 pF 94 8757 7V Figure 10. Input circuit U6046B Figure 11. Input circuit U6047B TELEFUNKEN Semiconductors Rev. A2, 03-Feb-97 5 (11) U6046B / U6047B Absolute Maximum Ratings Parameters Operating voltage, static, 5 min Ambient temperature range Storage temperature range Junction temperature Symbol VBatt Tamb Tstg Tj Value 24 –40 to +125 –55 to +125 150 Unit V °C °C °C Thermal Resistance Parameters Junction ambient DIP8 SO8 Symbol RthJA RthJA Maximum 110 160 Unit K/W K/W Electrical Characteristics VBatt =13.5 V, Tamb = 25°C, reference point ground, figure 2, unless otherwise specified Parameters Operating voltage R1 5 V supply Stabilized voltage Undervoltage threshold Supply current Internal Z-diode Relay control output Saturation voltage Leakage current Output current Output pulse current Load dump pulse Internal Z-diode Oscillator input Internal discharge resistance Switching voltage t < 5 min t < 60 min Without R1, C1 figure 4 Pins 7 and 8 VBatt = 12 V Pin 7 Power on reset All push buttons open, Pin 8 I8 = 10 mA Pin 8 Pin 2 I2 = 200 mA I2 = 300 mA V2 = 14 V w 510 W Test Conditions / Pin Symbol VBatt Min 6 Typ Max 16 24 18 6.0 Unit V V V V mA V V V8, V7 V7 VS IS VZ V2 Ilkg I2 4.3 5.0 3.0 5.2 1.3 13.5 14 1.2 2 5.4 4.2 2.0 16 1.5 100 300 1.5 mA mA A V kW V I2 t 300 ms I2 = 10 mA VZ f = 0.001 to 40 kHz, see table 1 Pin 6 V6 = 5 V R6 Lower Upper V6 = 0 V V6L V6H –I 6 t3 td V3,4,5 VZ R3,4,5 R3,4,5 v 20 1.6 0.9 2.8 22 2.0 1.1 3.1 24 2.4 1.4 3.5 1 7 74752 Input current Switching times Debounce time Delay time Inputs ON, OFF, TOGGLE Pins 3, 4 and 5 Switching threshold voltage Internal Z-diode I3, 4, 5 = 10 mA Pull-down resistance V3,4,5 = 5 V U 6046 B Pull-up resistance V3,4,5 = 0 V U 6047 B 6 (11) mA cycles cycles V V kW kW 5 72704 1.6 6.5 13 70 2.0 7.1 20 100 2.4 8.0 50 140 TELEFUNKEN Semiconductors Rev. A2, 03-Feb-97 U6046B / U6047B Table 1. Oscillator frequency, debounce time, delay time. dimensioning Frequency f Hz 1 2 3 4 5 6 7 8 9 10 20 30 40 50 60 70 80 90 100 200 300 400 500 600 Debounce time t3 ms 6000 3000 2000 1500 1200 1000 857 750 667 600 300 200 150 120 100 86 75 67 60 30 20 15 12 10 Delay time td C2 R2 Frequency f0 min 1229 614 410 307 246 205 176 154 137 123 61 41 31 25 20 18 15 14 12 s 369 246 184 147 123 nF 4700 1000 1000 1000 1000 1000 1000 1000 1000 1000 100 100 100 100 100 100 100 100 100 10 10 10 10 10 kW 280 650 440 330 260 220 190 160 140 130 650 440 330 260 220 190 160 140 130 600 400 300 240 200 Hz 700 800 900 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 11000 12000 13000 14000 15000 16000 17000 18000 19000 20000 Debounce time t3 ms 9.00 8.00 7.00 6.00 3.00 2.00 1.50 1.20 1.00 0.86 0.75 0.67 0.60 0.55 0.50 0.46 0.43 0.40 0.38 0.35 0.33 0.32 0.30 Delay time td C2 R2 min s 105 92 82 74 37 25 18 15 12 11 9 8 7 6.7 6.1 5.7 5.3 4.9 4.6 4.3 4.1 3.9 3.7 nF 10 10 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 kW 170 150 130 120 600 400 300 240 200 170 150 130 120 110 99 91 85 79 74 70 66 62 59 TELEFUNKEN Semiconductors Rev. A2, 03-Feb-97 7 (11) U6046B / U6047B 3. Applications VBatt R1 C1 47 mF/ 16 V 510 W VBatt C2 R2 C1 47 mF/ 16 V 5 R1 510 W R2 C2 8 7 6 8 7 6 5 U6046B 1 U6047B 1 2 3 4 2 3 4 94 8759 94 8758 Figure 12. Generation of a monostable delay time, td, caused by applying the operating voltage VBatt, not externally deactivatable. VBatt VBatt R1 C1 47 mF/ 16 V 510 W C2 R2 20 kW C1 47 mF/ 16 V R1 510 W R2 C2 8 7 6 5 8 7 6 5 U6047B U6046B 1 1 2 3 4.7 mF 94 8760 2 3 4 2 kW 4 22 mF 94 8761 Figure 13. Generation of a monostable delay time, td, by applying the operating voltage VBatt, deactivatable by the OFF push-button 8 (11) TELEFUNKEN Semiconductors Rev. A2, 03-Feb-97 U6046B / U6047B VBatt R1 VBatt R1 C1 47 mF/ 16 V 510 W R2 C1 C2 47 mF/ 16 V 5 510 W R2 C2 8 7 6 5 8 7 6 U6047B U6046B 1 1 2 3 4 2 3 2 kW 4 94 8762 94 8763 Figure 14. Monostable delay time, td, can be activated by the ON push-button, not externally deactivatable VBatt 5.6 kW 2 mA 5.6 kW VBatt 8 7 6 5 2x 5.6 kW 8 7 6 5 20 kW 20 kW U6047B U6046B 1 2 2 kW 3 4 2 kW 1 2 3 4 94 8764 94 8765 Figure 15. Increasing the contact current by parallel resistors TELEFUNKEN Semiconductors Rev. A2, 03-Feb-97 9 (11) U6046B / U6047B Dimensions in mm Package DIP8 Dimensions in mm 9.8 9.5 1.64 1.44 7.77 7.47 4.8 max 6.4 max 0.5 min 0.58 0.48 7.62 8 5 2.54 3.3 0.36 max 9.8 8.2 technical drawings according to DIN specifications 13021 1 4 Package SO8 Dimensions in mm 5.00 4.85 1.4 0.4 1.27 3.81 8 5 0.25 0.10 0.2 3.8 6.15 5.85 5.2 4.8 3.7 technical drawings according to DIN specifications 13034 8 5 10 (11) TELEFUNKEN Semiconductors Rev. A2, 03-Feb-97 U6046B / U6047B Ozone Depleting Substances Policy Statement It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 TELEFUNKEN Semiconductors Rev. A2, 03-Feb-97 11 (11)