3N163/3N164
P-Channel Enhancement-Mode MOSFET Transistors
Product Summary
Part
Number
V(BR)DSS Min
(V)
VGS(th)
(V)
rDS(on) Max
()
ID(on) Min
(mA)
Crss Max
(pF)
tON Typ
(ns)
3N163
–40
–2 to –5
250
–5
0.7
18
3N164
–30
–2 to –5
300
–3
0.7
18
Features
Benefits
Applications
Ultra-High Input Impedance Amplifier
Ultra-Low Input Leakage: 0.02 pA Typ. High Input Impedance Isolation
High Gate Breakdown Voltage: 125 V Minimize Handling ESD Problems Smoke Detectors
High Off Isolation without Power Electrometers
Normally Off
Analog Switching
Digital Switching
Description
The 3N163/164 are lateral p-channel MOSFETs designed
for analog switch and preamplifier applications where
high speed and low parasitic capacitances are required.
The hermetic TO-206AF package is compatible with
military processing per military standards (see Military
information).
TO-206AF
(TO-72)
D
S
1
4
2
3
Case
Substrate
G
Top View
Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted)
–40
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA
Lead Temperature (1/16” from case for 10 seconds) . . . . . . . . . 300C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . –55 to 150C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 375 mW
Notes:
a. Derate 3 mW/C above 25C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70228.
Siliconix
P-37404—Rev. D, 04-Jul-94
1
3N163/3N164
3N163
3N164
Drain-Source Breakdown Voltage
V(BR)DSS
ID = –10 mA, VDS = 0 V
–70
–40
–30
Source-Drain Breakdown Voltage
V(BR)SDS
IS = –10 mA, VGD = VBD = 0 V
–70
–40
–30
VGS(th)
ID = –10 mA, VGS = VDS
–2.5
–2
–5
–2
–5
VGS
ID = –0.5 mA, VDS = –15 V
–3.5
–3
–6.5
–2.5
–6.5
VGS = –40 V, VDS = 0 V
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