B340LB-E3/52T

B340LB www.vishay.com Vishay General Semiconductor High Current Density Surface-Mount Schottky Rectifier FEATURES • Guardring for overvoltage protection • Low profile package • Ideal for automated placement • Low power loss, high efficiency Available • Very low forward voltage drop • High surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMB (DO-214AA) Cathode Anode • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 LINKS TO ADDITIONAL RESOURCES TYPICAL APPLICATIONS 3D 3D For use in low voltage, high frequency inverters, freewheeling, DC/DC converters, and polarity protection application. 3D Models MECHANICAL DATA PRIMARY CHARACTERISTICS IF(AV) 3.0 A VRRM 40 V IFSM Case: SMB (DO-214AA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade 100 A VF at IF = 3.0 A 0.34 V TJ max. 150 °C Package SMB (DO-214AA) Circuit configurations Single Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 and M3 suffix meets JESD 201 class 2 whisker test Polarity: color band denotes cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code B340LB UNIT B34 Maximum repetitive peak reverse voltage VRRM 40 Maximum RMS voltage VRMS 28 Maximum DC blocking voltage VDC 40 Maximum average forward rectified current at TL (fig. 1) IF(AV) 3.0 Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Voltage rate of change (rated VR) Operating junction and storage temperature range V A IFSM 100 dV/dt 10 000 V/μs TJ, TSTG -65 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS Maximum instantaneous forward voltage VF (1) 3.0 A Maximum reverse current at IR (2) Rated VR TYP. MAX. TJ = 25 °C 0.43 0.45 TJ = 125 °C 0.34 0.38 TJ = 25 °C - 0.4 TJ = 125 °C 26 40 UNIT V mA Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms Revision: 11-Mar-2021 Document Number: 89039 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 B340LB www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL B340LB RθJA 70 RθJL 25 Typical thermal resistance UNIT °C/W ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE DO-214AA (SMB) B340LB-E3/52T PREFERRED P/N 0.096 52T 750 7" diameter tape and reel DO-214AA (SMB) B340LB-E3/5BT 0.096 5BT 3200 13" diameter tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 3.0 120 Peak Forward Surge Current (A) Average Forward Current (A) Resistive or Inductive Load 2.5 2.0 1.5 1.0 0.5 0 100 80 60 40 20 0 0 25 50 75 100 125 150 10 1 100 Lead Temperature (°C) Number of Cycles at 60 Hz Fig. 1 - Forward Current Derating Curve Fig. 3 - Maximum Non-Repetitive Peak Forward Surge Current Axis Title D = 0.8 D = 0.2 1.2 D = 0.1 0.9 D = 1.0 0.6 T 0.3 D = tp/T tp 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 10 1000 TJ = 150 °C 1st line 2nd line 2nd line Instantaneous Forward Current (A) D = 0.5 D = 0.3 Average Power Loss (W) 10000 100 1.5 TJ = 125 °C 100 1 TJ = 25 °C TJ = -40 °C 10 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Average Forward Current (A) Instantaneous Forward Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 4 - Typical Instantaneous Forward Characteristics Revision: 11-Mar-2021 Document Number: 89039 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 B340LB www.vishay.com Vishay General Semiconductor Axis Title 10000 1000 10 TJ = 125 °C 1 1000 0.1 0.01 TJ = 25 °C 100 0.001 0.0001 0.00001 Junction Capacitance (pF) TJ = 150 °C 100 1st line 2nd line 2nd line Instantaneous Reverse Current (mA) 1000 TJ = -40 °C 10 0.000001 20 40 60 80 100 100 1 10 100 Reverse Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Reverse Characteristics Fig. 6 - Typical Junction Capacitance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMB (DO-214AA) Cathode Band Mounting Pad Layout 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.096 (2.44) 0.084 (2.13) 0.220 (5.59 REF. 0.008 (0.2) 0 (0) 0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21) Revision: 11-Mar-2021 Document Number: 89039 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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