BAS34-TR

BAS33, BAS34 www.vishay.com Vishay Semiconductors Small Signal Switching Diodes FEATURES • Silicon planar diodes • Very low reverse current • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Protection circuits, time delay circuits, peak follower circuits, logarithmic amplifiers LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode band color: black Packaging codes / options: TR/10K per 13" reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART TYPE DIFFERENTIATION ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS BAS33 VRRM = 40 V BAS33-TAP or BAS33-TR BAS33 Single Tape and reel / ammopack BAS34 VRRM = 70 V BAS34-TAP or BAS34-TR BAS34 Single Tape and reel / ammopack ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Repetitive peak reverse voltage Reverse voltage Peak forward surge current PART SYMBOL VALUE UNIT BAS33 VRRM 40 V BAS34 VRRM 70 V BAS33 VR 30 V BAS34 tp = 1 μs VR 60 V IFSM 2 A IF 200 mA Forward continuous current THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air Junction temperature Storage temperature range TEST CONDITION SYMBOL VALUE UNIT l = 4 mm, TL = constant RthJA 350 K/W Tj 175 °C Tstg -65 to +175 °C Rev. 1.9, 26-Nov-2021 Document Number: 85541 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS33, BAS34 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Forward voltage Reverse current PART SYMBOL IF = 100 mA VF E ≤ 300 Ix, VR IR E ≤ 300 Ix, VR, Tj = 125 °C IR MIN. TYP. MAX. 1 UNIT 1 V 3 nA 0.5 μA E ≤ 300 Ix, VR = 15 V BAS33 IR 0.5 1 nA E ≤ 300 Ix, VR = 30 V BAS34 IR 0.5 1 nA Breakdown voltage IR = 5 μA, tp/T = 0.01, tp = 0.3 ms BAS33 V(BR) 40 BAS34 V(BR) 70 Diode capacitance VR = 0 V, f = 1 MHz, V V CD 3 pF TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 10 000 1000 I F - Forward Current (mA) I R - Reverse Current (nA) V R = VRRM 1000 Scattering Limit 100 10 Tj = 25 °C 100 Scattering Limit 10 1 0.1 1 0 40 80 120 160 0 200 Tj - Junction Temperature (°C) 94 9079 94 9078 Fig. 1 - Reverse Current vs. Junction Temperature 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage (V) Fig. 2 - Forward Current vs. Forward Voltage PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH) 3.9 max. [0.154] 3.1 min. [0.120] 26 min. [1.024] 1.3 [0.050] 26 min. [1.024] 1.7 [0.067] Ø 0.4 min. [0.015] Ø 0.6 max. [0.024] Cathode Identification Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 1.9, 26-Nov-2021 Document Number: 85541 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2022 1 Document Number: 91000