BAS70-02V-HG3-08

BAS70-02V www.vishay.com Vishay Semiconductors Small Signal Schottky Diode FEATURES • This diode features very low turn-on voltage and fast switching 2 1 • This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges 22321 • AEC-Q101 qualified available LINKS TO ADDITIONAL RESOURCES • Space saving SOD-523 package 3D 3D • Base P/N-G3 - RoHS-compliant, commercial grade 3D Models MECHANICAL DATA • Base P/N-HG3 - RoHS-compliant, AEC-Q101 qualified Case: SOD-523 Weight: approx. 1.4 mg Molding compound flammability rating: UL 94 V-0 Terminals: high temperature soldering guaranteed: 260 °C/10 s at terminals Packaging codes / options: 08/8K per 7" reel (8 mm tape) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PARTS TABLE PART BAS70-02V ORDERING CODE AEC-Q101 QUALIFIED BAS70-02V-G3-08 no BAS70-02V-HG3-08 yes CIRCUIT CONFIGURATION TYPE MARKING REMARKS Single :X Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Repetitive peak reverse voltage Forward continuous current TEST CONDITION SYMBOL VRRM IF VALUE 70 100 tp = 10 ms square wave, Tj = 25 °C prior to surge IFSM 600 mA on FR-4 board with recommended soldering footprint Ptot 150 mW TEST CONDITION SYMBOL VALUE UNIT on FR-4 board according to JEDEC® 51-3 with recommended soldering footprint RthJA 680 K/W RthJL 480 K/W Tj 125 °C Operating temperature range Top -55 to +125 °C Storage temperature range Tstg -65 to +150 °C Surge forward current Power dissipation UNIT V mA THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air Thermal resistance junction to lead Junction temperature ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Reserve breakdown voltage Leakage current Forward voltage Diode capacitance Reserve recovery time TEST CONDITION IR = 10 μA (pulsed) VR = 50 V, tp < 300 μs tp < 300 μs, IF = 1.0 mA tp < 300 μs, IF = 15 mA VR = 0 V, f = 1 MHz IF = 10 mA, IR = 10 mA, iR = 1 mA, RL = 100 Ω SYMBOL V(BR) IR VF VF CD trr MIN. 70 TYP. MAX. 20 100 410 1000 2 UNIT V nA mV mV pF 5 ns 1.5 Rev. 1.6, 20-Jan-2022 Document Number: 85652 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAS70-02V www.vishay.com Vishay Semiconductors 0.1 [0.004] max. 0.20 [0.008] 0.08 [0.003] 0.75 [0.029] 0.1 [0.004] 0.3 [0.012] 0.55 [0.021] PACKAGE DIMENSIONS in millimeters [inches]: SOD-523 0.9 [0.035] 0.85 [0.033] min. 0.17 [0.007] 0.37 [0.015] 0.7 [0.028] 1.7 [0.067] 1.5 [0.059] 1.3 [0.051] 1.1 [0.043] 0.5 [0.020] 0.35 [0.014] 0.18 [0.007] Footprint recommendation: 1.45 [0.057] Document no.: S8-V-3880.02-003 (4) Created - Date: 04. April 2017 Rev. 4 - Date: 03. Aug. 2020 23093 0.35 [0.014] Rev. 1.6, 20-Jan-2022 Document Number: 85652 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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ALL RIGHTS RESERVED Revision: 01-Jan-2023 1 Document Number: 91000