BAT54S-E3-08

BAT54, BAT54A, BAT54C, BAT54S www.vishay.com Vishay Semiconductors Small Signal Schottky Diodes, Single and Dual FEATURES • These diodes feature very low turn-on voltage and fast switching • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • AEC-Q101 qualified available BAT54 • Base P/N-E3 - RoHS-compliant, commercial grade BAT54A • Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified 3 3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Top View 1 2 1 MECHANICAL DATA 2 Case: SOT-23 BAT54C BAT54S 3 3 Weight: approx. 8.8 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box Top View 08/3K per 7" reel (8 mm tape), 15K/box 1 2 1 2 DESIGN SUPPORT TOOLS click logo to get started Models Available PARTS TABLE PART BAT54 BAT54A BAT54C BAT54S ORDERING CODE BAT54-E3-08 or BAT54-E3-18 BAT54-HE3-08 or BAT54-HE3-18 BAT54A-E3-08 or BAT54A-E3-18 BAT54A-HE3-08 or BAT54A-HE3-18 BAT54C-E3-08 or BAT54C-E3-18 BAT54C-HE3-08 or BAT54C-HE3-18 BAT54S-E3-08 or BAT54S-E3-18 BAT54S-HE3-08 or BAT54S-HE3-18 CIRCUIT CONFIGURATION TYPE MARKING Single L4 Common anode L42 Common cathode L43 Dual serial L44 REMARKS Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER Repetitive peak reverse voltage Forward continuous current (1) Repetitive peak forward current (1) Surge forward current (1) Power dissipation TEST CONDITION tp < 1 s SYMBOL VRRM IF IFRM IFSM Ptot VALUE 30 200 300 600 230 UNIT V mA mA mA mW SYMBOL VALUE UNIT RthJA 430 K/W Tj Tstg Top 125 -65 to +150 -55 to +125 °C °C °C Note (1) Device on fiberglass substrate, see layout on next page THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air Junction temperature Storage temperature range Operating temperature range TEST CONDITION Device on fiberglass substrate, see layout on next page Rev. 2.0, 02-Jun-17 Document Number: 85508 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BAT54, BAT54A, BAT54C, BAT54S www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. Reserve breakdown voltage IR = 100 μA (pulsed) V(BR) 30 Leakage current Forward voltage Diode capacitance Reserve recovery time TYP. MAX. UNIT V Pulsed test tp < 300 μs, δ