BAY135
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Vishay Semiconductors
Small Signal Fast Switching Diode, High Voltage
FEATURES
• Silicon planar diode
• Very low reverse current
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Protection circuits, delay circuits
ADDITIONAL RESOURCES
3D 3D
3D Models
MECHANICAL DATA
Case: DO-35 (DO-204AH)
Weight: approx. 125 mg
Cathode band color: black
Packaging codes / options:
TAP/10K per ammopack (52 mm tape), 50K/box
PARTS TABLE
PART
ORDERING CODE
TYPE MARKING
CIRCUIT CONFIGURATION
REMARKS
BAY135-TAP
BAY135
Single
Ammopack
BAY135
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Repetitive peak reverse voltage
Reverse voltage
SYMBOL
VALUE
UNIT
VRRM
140
V
VR
125
V
Peak forward surge current
tp = 1 μs
IFSM
2
A
Average forward current
f = 50 Hz
IF(AV)
200
mA
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Thermal resistance junction to ambient air
Junction temperature
Storage temperature range
TEST CONDITION
SYMBOL
VALUE
UNIT
l = 4 mm, TL = constant
RthJA
350
K/W
Tj
175
°C
Tstg
-65 to +175
°C
Rev. 2.0, 26-Nov-2021
Document Number: 85552
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BAY135
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
IF = 30 mA
VF
1
V
E ≤ 300 Ix, VR = 60 V
IR
3
nA
E ≤ 300 Ix, VR, Tj = 125 °C
IR
0.5
μA
1
nA
5
pF
Forward voltage
Reverse current
E ≤ 300 Ix, VR = 60 V
IR
Breakdown voltage
IR = 5 μA, tp/T = 0.01, tp = 0.3 ms
V(BR)
Diode capacitance
VR = 0 V, f = 1 MHz,
CD
MIN.
TYP.
MAX.
UNIT
140
V
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10 000
1000
I F - Forward Current (mA)
I R - Reverse Current (nA)
V R = VRRM
1000
Scattering Limit
100
10
1
Tj = 25 °C
100
Scattering Limit
10
1
0.1
0
40
80
120
160
0
200
Tj - Junction Temperature (°C)
94 9079
94 9078
Fig. 1 - Reverse Current vs. Junction Temperature
0.4
0.8
1.2
1.6
2.0
V F - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH)
3.9 max. [0.154]
3.1 min. [0.120]
26 min. [1.024]
1.3 [0.050]
26 min. [1.024]
1.7 [0.067]
Ø 0.4 min. [0.015]
Ø 0.6 max. [0.024]
Cathode Identification
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
94 9366
Rev. 2.0, 26-Nov-2021
Document Number: 85552
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2022
1
Document Number: 91000