BYG20D, BYG20G, BYG20J
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Vishay General Semiconductor
Ultrafast Avalanche SMD Rectifier
FEATURES
• Low profile package
Available
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low reverse current
• Soft recovery characteristics
• Ultrafast reverse recovery time
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
SMA (DO-214AC)
Cathode
Anode
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
ADDITIONAL RESOURCES
3D 3D
TYPICAL APPLICATIONS
3D Models
For use in high frequency rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
1.5 A
VRRM
200 V, 400 V, 600 V
IFSM
30 A
IR
1.0 μA
VF at IF
1.4 V
trr
75 ns
ER
20 mJ
TJ max.
150 °C
Package
SMA (DO-214AC)
Circuit configuration
Single
MECHANICAL DATA
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, HM3 suffix meet JESD 201 class 2 whisker test
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
BYG20D
BYG20G
BYG20J
BYG20D
BYG20G
BYG20J
200
400
600
UNIT
Maximum repetitive peak reverse voltage
VRRM
Average forward current
IF(AV)
1.5
A
Peak forward surge current 10 ms single half sine-wave superimposed on
rated load
IFSM
30
A
Pulse energy in avalanche mode, non repetitive (inductive load switch off)
I(BR)R = 1 A, TJ = 25 °C
ER
20
mJ
TJ, TSTG
-55 to +150
°C
Operating junction and storage temperature range
V
Revision: 21-Feb-2020
Document Number: 88958
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYG20D, BYG20G, BYG20J
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Maximum instantaneous
forward voltage
IF = 1 A
Maximum DC reverse current
VR = VRRM
Maximum reverse recovery
time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
BYG20G
TJ = 25 °C
TJ = 100 °C
BYG20J
1.3
VF (1)
TJ = 25 °C
IF = 1.5 A
BYG20D
V
1.4
1
IR
µA
10
trr
UNIT
75
ns
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Typical thermal resistance, junction to lead, TL = const.
BYG20D
BYG20G
RθJL
Typical thermal resistance, junction to ambient
BYG20J
25
UNIT
°C/W
RθJA
(1)
150
RθJA
(2)
125
RθJA (3)
100
°C/W
Notes
(1) Mounted on epoxy-glass hard tissue
(2) Mounted on epoxy-glass hard tissue, 50 mm2 35 μm Cu
(3) Mounted on Al-oxide-ceramic (Al O ), 50 mm2 35 μm Cu
2 3
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.064
TR
1800
7" diameter plastic tape and reel
BYG20J-E3/TR3
0.064
TR3
7500
13" diameter plastic tape and reel
BYG20JHE3_A/H (1)
0.064
H
1800
7" diameter plastic tape and reel
BYG20J-E3/TR
BYG20JHE3_A/I
(1)
BYG20J-M3/TR
BYG20J-M3/TR3
BYG20JHM3_A/H
(1)
BYG20JHM3_A/I (1)
0.064
I
7500
13" diameter plastic tape and reel
0.064
TR
1800
7" diameter plastic tape and reel
0.064
TR3
7500
13" diameter plastic tape and reel
0.064
H
1800
7" diameter plastic tape and reel
0.064
I
7500
13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified
Revision: 21-Feb-2020
Document Number: 88958
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYG20D, BYG20G, BYG20J
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
70
TJ = 150 °C
1
1000
TJ = 25 °C
0.1
TJ = -40 °C
100
0.01
0.001
Reverse Power Dissipation (mW)
10000
1st line
2nd line
2nd line
Instantaneous Forward Current (A)
Axis Title
10
50
PR - Limit
at 100 % VR
40
30
PR - Limit
at 80 % VR
20
10
10
0
0.5
1.0
1.5
2.0
2.5
0
3.0
25
Instantaneous Forward Voltage (V)
50
75
100
125
150
Junction Temperature (°C)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
1.6
30
VR = VRRM
Half Sine-Wave
RθJA ≤ 25 K/W
1.4
f = 1 MHz
25
Diode Capacitance (pF)
Average Forward Current (A)
VR = VRRM
60
1.2
1.0
0.8
RθJA ≤ 125 K/W
0.6
RθJA ≤ 150 K/W
0.4
20
15
10
5
0.2
0
0
0
20
40
60
80
100
120
140
160
0.1
1
10
100
Ambient Temperature (°C)
Reverse Voltage (V)
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Fig. 5 - Diode Capacitance vs. Reverse Voltage
600
100
IR = 0.5 A, iR = 0.125 A
Reverse Recovery Time (ns)
Reverse Current (µA)
VR = VRRM
10
1
500
400
TA = 125 °C
300
TA = 100 °C
200
TA = 75 °C
TA = 50 °C
100
TA = 25 °C
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
Junction Temperature (°C)
Forward Current (A)
Fig. 3 - Reverse Current vs. Junction Temperature
Fig. 6 - Reverse Recovery Time vs. Forward Current
Revision: 21-Feb-2020
Document Number: 88958
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYG20D, BYG20G, BYG20J
www.vishay.com
Thermal Resistance for Pulse Cond. (K/W)
Vishay General Semiconductor
200
Reverse Recovery Charge (nC)
IR = 0.5 A, iR = 0.125 A
150
TA = 125 °C
TA = 100 °C
100
TA = 75 °C
50
TA = 50 °C
TA = 25 °C
0
0
0.2
0.4
0.6
0.8
1.0
1000
125 K/W DC
100
tp/T = 0.5
tp/T = 0.2
tp/T = 0.1
10
tp/T = 0.05
tp/T = 0.02
Single Pulse
tp/T = 0.01
1
10-5
10-4
10-3
10-2
10-1
100
Forward Current (A)
Pulse Length (s)
Fig. 7 - Reverse Recovery Charge vs. Forward Current
Fig. 8 - Thermal Response
101
102
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 21-Feb-2020
Document Number: 88958
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000