BYG20J-E3/TR3

BYG20D, BYG20G, BYG20J www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package Available • Ideal for automated placement • Glass passivated pellet chip junction • Low reverse current • Soft recovery characteristics • Ultrafast reverse recovery time • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C SMA (DO-214AC) Cathode Anode • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ADDITIONAL RESOURCES 3D 3D TYPICAL APPLICATIONS 3D Models For use in high frequency rectification of power supply, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 1.5 A VRRM 200 V, 400 V, 600 V IFSM 30 A IR 1.0 μA VF at IF 1.4 V trr 75 ns ER 20 mJ TJ max. 150 °C Package SMA (DO-214AC) Circuit configuration Single MECHANICAL DATA Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, HM3 suffix meet JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code BYG20D BYG20G BYG20J BYG20D BYG20G BYG20J 200 400 600 UNIT Maximum repetitive peak reverse voltage VRRM Average forward current IF(AV) 1.5 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 30 A Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, TJ = 25 °C ER 20 mJ TJ, TSTG -55 to +150 °C Operating junction and storage temperature range V Revision: 21-Feb-2020 Document Number: 88958 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG20D, BYG20G, BYG20J www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL Maximum instantaneous forward voltage IF = 1 A Maximum DC reverse current VR = VRRM Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A BYG20G TJ = 25 °C TJ = 100 °C BYG20J 1.3 VF (1) TJ = 25 °C IF = 1.5 A BYG20D V 1.4 1 IR µA 10 trr UNIT 75 ns Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Typical thermal resistance, junction to lead, TL = const. BYG20D BYG20G RθJL Typical thermal resistance, junction to ambient BYG20J 25 UNIT °C/W RθJA (1) 150 RθJA (2) 125 RθJA (3) 100 °C/W Notes (1) Mounted on epoxy-glass hard tissue (2) Mounted on epoxy-glass hard tissue, 50 mm2 35 μm Cu (3) Mounted on Al-oxide-ceramic (Al O ), 50 mm2 35 μm Cu 2 3 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.064 TR 1800 7" diameter plastic tape and reel BYG20J-E3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel BYG20JHE3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel BYG20J-E3/TR BYG20JHE3_A/I (1) BYG20J-M3/TR BYG20J-M3/TR3 BYG20JHM3_A/H (1) BYG20JHM3_A/I (1) 0.064 I 7500 13" diameter plastic tape and reel 0.064 TR 1800 7" diameter plastic tape and reel 0.064 TR3 7500 13" diameter plastic tape and reel 0.064 H 1800 7" diameter plastic tape and reel 0.064 I 7500 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified Revision: 21-Feb-2020 Document Number: 88958 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG20D, BYG20G, BYG20J www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 70 TJ = 150 °C 1 1000 TJ = 25 °C 0.1 TJ = -40 °C 100 0.01 0.001 Reverse Power Dissipation (mW) 10000 1st line 2nd line 2nd line Instantaneous Forward Current (A) Axis Title 10 50 PR - Limit at 100 % VR 40 30 PR - Limit at 80 % VR 20 10 10 0 0.5 1.0 1.5 2.0 2.5 0 3.0 25 Instantaneous Forward Voltage (V) 50 75 100 125 150 Junction Temperature (°C) Fig. 1 - Forward Current vs. Forward Voltage Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature 1.6 30 VR = VRRM Half Sine-Wave RθJA ≤ 25 K/W 1.4 f = 1 MHz 25 Diode Capacitance (pF) Average Forward Current (A) VR = VRRM 60 1.2 1.0 0.8 RθJA ≤ 125 K/W 0.6 RθJA ≤ 150 K/W 0.4 20 15 10 5 0.2 0 0 0 20 40 60 80 100 120 140 160 0.1 1 10 100 Ambient Temperature (°C) Reverse Voltage (V) Fig. 2 - Max. Average Forward Current vs. Ambient Temperature Fig. 5 - Diode Capacitance vs. Reverse Voltage 600 100 IR = 0.5 A, iR = 0.125 A Reverse Recovery Time (ns) Reverse Current (µA) VR = VRRM 10 1 500 400 TA = 125 °C 300 TA = 100 °C 200 TA = 75 °C TA = 50 °C 100 TA = 25 °C 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 Junction Temperature (°C) Forward Current (A) Fig. 3 - Reverse Current vs. Junction Temperature Fig. 6 - Reverse Recovery Time vs. Forward Current Revision: 21-Feb-2020 Document Number: 88958 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG20D, BYG20G, BYG20J www.vishay.com Thermal Resistance for Pulse Cond. (K/W) Vishay General Semiconductor 200 Reverse Recovery Charge (nC) IR = 0.5 A, iR = 0.125 A 150 TA = 125 °C TA = 100 °C 100 TA = 75 °C 50 TA = 50 °C TA = 25 °C 0 0 0.2 0.4 0.6 0.8 1.0 1000 125 K/W DC 100 tp/T = 0.5 tp/T = 0.2 tp/T = 0.1 10 tp/T = 0.05 tp/T = 0.02 Single Pulse tp/T = 0.01 1 10-5 10-4 10-3 10-2 10-1 100 Forward Current (A) Pulse Length (s) Fig. 7 - Reverse Recovery Charge vs. Forward Current Fig. 8 - Thermal Response 101 102 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMA (DO-214AC) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 21-Feb-2020 Document Number: 88958 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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