BYG22DHE3/TR

BYG22A, BYG22B, BYG22D www.vishay.com Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package Available • Ideal for automated placement • Glass passivated pellet chip junction • Low reverse current • Low forward voltage • Soft recovery characteristic • Ultra fast reverse recovery time SMA (DO-214AC) Cathode • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Anode • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 or P/NHM3 ADDITIONAL RESOURCES • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 3D 3D 3D Models TYPICAL APPLICATIONS For use in high frequency rectification and freewheeling application in switching mode converters and inverters for consumer, computer, automotive, and telecommunication. PRIMARY CHARACTERISTICS IF(AV) 2.0 A VRRM 50 V, 100 V, 200 V IFSM 35 A IR 1.0 μA VF at IF 1.1 V trr 25 ns ER 20 mJ MECHANICAL DATA TJ max. 150 °C Package SMA (DO-214AC) Circuit configurations Single Case: SMA (DO-214AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified Base P/NHM3_X - halogen-free, RoHS-compliant, and AEC-Q101 qualified (“_X” denotes revision code e.g. A, B,...) Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3, M3, HE3, and HM3 suffix meet JESD 201 class 2 whisker test Polarity: color band denotes the cathode end MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Device marking code BYG22A BYG22B BYG22D BYG22A BYG22B BYG22D 50 100 200 UNIT Maximum repetitive peak reverse voltage VRRM Average forward current IF(AV) 2.0 A Peak forward surge current 10 ms single half sine-wave superimposed on rated load IFSM 35 A ER 20 mJ TJ, TSTG -55 to +150 °C Pulse energy in avalanche mode, non repetitive (inductive load switch off) I(BR)R = 1 A, TJ = 25 °C Operating junction and storage temperature range V Revision: 21-Feb-2020 Document Number: 88959 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG22A, BYG22B, BYG22D www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL Maximum instantaneous forward voltage IF = 1.0 A Maximum reverse current VR = VRRM Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A TJ = 25 °C IF = 2.0 A TJ = 25 °C TJ = 100 °C BYG22A BYG22B BYG22D 1.0 VF (1) V 1.1 1 IR µA 10 trr UNIT 25 ns Note (1) Pulse test: 300 μs pulse width, 1 % duty cycle THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum thermal resistance, junction to lead, TL = const. Maximum thermal resistance, junction to ambient BYG22A BYG22B RθJL 25 RθJA (1) 150 RθJA (2) 125 (3) 100 RθJA BYG22D UNIT °C/W °C/W Notes Mounted on epoxy-glass hard tissue (2) Mounted on epoxy-glass hard tissue, 50 mm2 35 μm Cu (3) Mounted on Al-oxide-ceramic (Al O ), 50 mm2 35 μm Cu 2 3 (1) ORDERING INFORMATION (Example) PREFERRED P/N BYG22D-E3/TR BYG22D-E3/TR3 BYG22DHE3_A/H (1) UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.064 TR 1800 7" diameter plastic tape and reel 0.064 TR3 7500 13" diameter plastic tape and reel 0.064 H 1800 7" diameter plastic tape and reel BYG22DHE3_A/I (1) 0.064 I 7500 13" diameter plastic tape and reel BYG22D-M3/TR 0.064 TR 1800 7" diameter plastic tape and reel BYG22D-M3/TR3 0.064 TR3 7500 13" diameter plastic tape and reel BYG22DHM3_A/H (1) 0.064 H 1800 7" diameter plastic tape and reel 0.064 I 7500 13" diameter plastic tape and reel BYG22DHM3_A/I (1) Note (1) AEC-Q101 qualified Revision: 21-Feb-2020 Document Number: 88959 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG22A, BYG22B, BYG22D www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Axis Title 1000 0.1 TJ = 25 °C 100 0.01 TJ = -40 °C 0.001 Reverse Power Dissipation (mW) TJ = 150 °C 1 1st line 2nd line 2nd line Instantaneous Forward Current (A) 50 10000 10 VR = VRRM 40 30 PR - Limit at 80 % VR 10 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 25 Instantaneous Forward Voltage (V) 50 75 100 125 150 Junction Temperature (°C) Fig. 1 - Forward Current vs. Forward Voltage Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature 70 2.5 f = 1 MHz VR = VRRM Half Sine-Wave 60 2.0 Diode Capacitance (pF) Average Forward Current (A) PR - Limit at 100 % VR 20 RθJA ≤ 25 K/W 1.5 RθJA ≤ 125 K/W 1.0 RθJA ≤ 150 K/W 0.5 50 40 30 20 10 0 0 0 20 40 60 80 100 120 140 160 0.1 1 10 100 Ambient Temperature (°C) Reverse Voltage (V) Fig. 2 - Max. Average Forward Current vs. Ambient Temperature Fig. 5 - Diode Capacitance vs. Reverse Voltage 140 100 TA = 125 °C Reverse Recovery Time (ns) Reverse Current (µA) VR = VRRM 10 120 TA = 100 °C 100 TA = 75 °C 80 TA = 50 °C 60 40 TA = 25 °C 20 IR = 0.5 A, iR = 0.125 A 1 0 25 50 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 Junction Temperature (°C) Forward Current (A) Fig. 3 - Reverse Current vs. Junction Temperature Fig. 6 - Max. Reverse Recovery Time vs. Forward Current Revision: 21-Feb-2020 Document Number: 88959 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 BYG22A, BYG22B, BYG22D www.vishay.com Thermal Resistance for Pulse Cond. (K/W) Vishay General Semiconductor 60 Reverse Recovery Charge (nC) TA = 125 °C 50 TA = 100 °C 40 TA = 75 °C 30 TA = 50 °C 20 TA = 25 °C 10 IR = 0.5 A, iR = 0.125 A 0 0 0.2 0.4 0.6 0.8 1.0 1000 125 K/W DC 100 tp/T = 0.5 tp/T = 0.2 tp/T = 0.1 10 tp/T = 0.05 tp/T = 0.02 Single Pulse tp/T = 0.01 1 10-5 10-4 10-3 10-2 10-1 100 Forward Current (A) Pulse Length (s) Fig. 7 - Max. Reverse Recovery Charge vs. Forward Current Fig. 8 - Thermal Response 101 102 PACKAGE OUTLINE DIMENSIONS in inches (millimeters) SMA (DO-214AC) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 21-Feb-2020 Document Number: 88959 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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