BYG22A, BYG22B, BYG22D
www.vishay.com
Vishay General Semiconductor
Ultrafast Avalanche SMD Rectifier
FEATURES
• Low profile package
Available
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low reverse current
• Low forward voltage
• Soft recovery characteristic
• Ultra fast reverse recovery time
SMA (DO-214AC)
Cathode
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
Anode
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
ADDITIONAL RESOURCES
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
3D 3D
3D Models
TYPICAL APPLICATIONS
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive, and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
VRRM
50 V, 100 V, 200 V
IFSM
35 A
IR
1.0 μA
VF at IF
1.1 V
trr
25 ns
ER
20 mJ
MECHANICAL DATA
TJ max.
150 °C
Package
SMA (DO-214AC)
Circuit configurations
Single
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B,...)
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meet JESD 201 class 2
whisker test
Polarity: color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
BYG22A
BYG22B
BYG22D
BYG22A
BYG22B
BYG22D
50
100
200
UNIT
Maximum repetitive peak reverse voltage
VRRM
Average forward current
IF(AV)
2.0
A
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
35
A
ER
20
mJ
TJ, TSTG
-55 to +150
°C
Pulse energy in avalanche mode,
non repetitive (inductive load switch off)
I(BR)R = 1 A, TJ = 25 °C
Operating junction and storage temperature range
V
Revision: 21-Feb-2020
Document Number: 88959
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYG22A, BYG22B, BYG22D
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
Maximum instantaneous
forward voltage
IF = 1.0 A
Maximum reverse current
VR = VRRM
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
TJ = 25 °C
IF = 2.0 A
TJ = 25 °C
TJ = 100 °C
BYG22A
BYG22B
BYG22D
1.0
VF (1)
V
1.1
1
IR
µA
10
trr
UNIT
25
ns
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum thermal resistance, junction to lead, TL = const.
Maximum thermal resistance, junction to ambient
BYG22A
BYG22B
RθJL
25
RθJA (1)
150
RθJA (2)
125
(3)
100
RθJA
BYG22D
UNIT
°C/W
°C/W
Notes
Mounted on epoxy-glass hard tissue
(2) Mounted on epoxy-glass hard tissue, 50 mm2 35 μm Cu
(3) Mounted on Al-oxide-ceramic (Al O ), 50 mm2 35 μm Cu
2 3
(1)
ORDERING INFORMATION (Example)
PREFERRED P/N
BYG22D-E3/TR
BYG22D-E3/TR3
BYG22DHE3_A/H
(1)
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.064
TR
1800
7" diameter plastic tape and reel
0.064
TR3
7500
13" diameter plastic tape and reel
0.064
H
1800
7" diameter plastic tape and reel
BYG22DHE3_A/I (1)
0.064
I
7500
13" diameter plastic tape and reel
BYG22D-M3/TR
0.064
TR
1800
7" diameter plastic tape and reel
BYG22D-M3/TR3
0.064
TR3
7500
13" diameter plastic tape and reel
BYG22DHM3_A/H (1)
0.064
H
1800
7" diameter plastic tape and reel
0.064
I
7500
13" diameter plastic tape and reel
BYG22DHM3_A/I
(1)
Note
(1) AEC-Q101 qualified
Revision: 21-Feb-2020
Document Number: 88959
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYG22A, BYG22B, BYG22D
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Axis Title
1000
0.1
TJ = 25 °C
100
0.01
TJ = -40 °C
0.001
Reverse Power Dissipation (mW)
TJ = 150 °C
1
1st line
2nd line
2nd line
Instantaneous Forward Current (A)
50
10000
10
VR = VRRM
40
30
PR - Limit
at 80 % VR
10
10
0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
25
Instantaneous Forward Voltage (V)
50
75
100
125
150
Junction Temperature (°C)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
70
2.5
f = 1 MHz
VR = VRRM
Half Sine-Wave
60
2.0
Diode Capacitance (pF)
Average Forward Current (A)
PR - Limit
at 100 % VR
20
RθJA ≤ 25 K/W
1.5
RθJA ≤ 125 K/W
1.0
RθJA ≤ 150 K/W
0.5
50
40
30
20
10
0
0
0
20
40
60
80
100
120
140
160
0.1
1
10
100
Ambient Temperature (°C)
Reverse Voltage (V)
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Fig. 5 - Diode Capacitance vs. Reverse Voltage
140
100
TA = 125 °C
Reverse Recovery Time (ns)
Reverse Current (µA)
VR = VRRM
10
120
TA = 100 °C
100
TA = 75 °C
80
TA = 50 °C
60
40
TA = 25 °C
20
IR = 0.5 A, iR = 0.125 A
1
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
Junction Temperature (°C)
Forward Current (A)
Fig. 3 - Reverse Current vs. Junction Temperature
Fig. 6 - Max. Reverse Recovery Time vs. Forward Current
Revision: 21-Feb-2020
Document Number: 88959
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BYG22A, BYG22B, BYG22D
www.vishay.com
Thermal Resistance for Pulse Cond. (K/W)
Vishay General Semiconductor
60
Reverse Recovery Charge (nC)
TA = 125 °C
50
TA = 100 °C
40
TA = 75 °C
30
TA = 50 °C
20
TA = 25 °C
10
IR = 0.5 A, iR = 0.125 A
0
0
0.2
0.4
0.6
0.8
1.0
1000
125 K/W DC
100
tp/T = 0.5
tp/T = 0.2
tp/T = 0.1
10
tp/T = 0.05
tp/T = 0.02
Single Pulse
tp/T = 0.01
1
10-5
10-4
10-3
10-2
10-1
100
Forward Current (A)
Pulse Length (s)
Fig. 7 - Max. Reverse Recovery Charge vs. Forward Current
Fig. 8 - Thermal Response
101
102
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
Mounting Pad Layout
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 21-Feb-2020
Document Number: 88959
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 01-Jan-2022
1
Document Number: 91000